IP Library Granted Patent US 7,416,633
Granted Patent B2
US 7,416,633 · App. 10/928,259 · Granted Aug 26, 2008

Plasma processing apparatus

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Quick Facts
Patent No.
US 7,416,633
App. No.
10/928,259
Granted
Aug 26, 2008
Kind
B2
Abstract

Described is a vacuum processing apparatus that includes a vacuum container which has a processing chamber inside thereof, wherein a plasma used for processing a sample is formed inside the processing chamber. The processing chamber has an upper side wall which surrounds a space in which the plasma is formed and contacts the plasma, and a lower side wall inside of which a sample stand, supporting the sample to be processed, is arranged. A connecting portion is provided between the upper and lower side walls, and a heater is provided for heating the upper side wall. The apparatus also includes structure at the connecting portion to impede heat transfer between the upper and lower side walls.

Claims (13)

1. A plasma processing apparatus including a vacuum container in which the pressure is reduced, an inner chamber which is arranged in the inside of the vacuum container, a sample stand which is arranged in the inner chamber and on which a sample which constitutes an object to be processed is placed, wherein plasma is formed in a space above the sample stand in the inner chamber so as to process the sample,

wherein the inner chamber comprises:

an upper side wall which surrounds the space in which the plasma is formed and which contacts with the plasma;

a lower side wall inside of which the sample stand is arranged, arranged by way of a space which is defined between the lower side wall and the vacuum container and in which pressure is reduced,

a connecting portion between both end surfaces of the upper side wall and the lower side wall, and

an atmospheric pressure portion provided at an outer part of the connecting portion connected to the atmosphere for transferring heat therebetween,

the plasma processing apparatus further comprising:

a heater for heating the upper side wall,

a temperature regulation means which regulates a temperature of the lower side wall to a temperature lower than a temperature of the upper side wall through the atmospheric pressure portion; and

an impeding means having a vacuum pressure portion provided at an inner part of the connecting portion for impeding heat transfer between the upper side wall and the lower side wall.

2. A plasma processing apparatus according to claim 1 , the plasma processing apparatus further comprising:

a seal which is arranged on the connecting portion and seals the inner part of the vacuum pressure portion and the outer part of the atmospheric pressure portion.

3. A plasma processing apparatus according to claim 2 , wherein the temperature regulation means is mounted on the vacuum container.

Assignments (3)
CHANGE OF NAME AND ADDRESS Recorded Mar 30, 2020
From: HITACHI HIGH-TECHNOLOGIES CORPORATION
To: HITACHI HIGH-TECH CORPORATION
Reel/Frame 052259/0227 →
CORECTED ASSIGNMENT - THE 1ST AND 2ND INVENTOR'S NAMES WERE INCORRECTLY REVERSED ON THE PREVIOUS COVER SHEET AND NOTICE OF RECORDATION THAT CAN BE SEEN IN THE ENCLOSED PAPERS. (ASSIGNMENT OF ASSIGNOR'S INTEREST) Recorded Nov 3, 2005
From: MAKINO, AKITAKA; KIHARA, HIDEKI; TAUCHI, SUSUMU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 017174/0160 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 18, 2004
From: AKITAKA, MAKINO; HIDEKI, KIHARA; TAUCHI, SUSUMU
To: HITACHI HIGH-TECHNOLOGIES CORPORATION
Reel/Frame 016000/0936 →