Method of forming memory cells in an array

1. A method of forming memory cells in an array including:

forming a first memory cell relative to a substrate, the first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell relative to the substrate, the second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node formed on the substrate, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate extending above the substrate, between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming the first and second memory cells comprises forming first and second DRAM memory cells.

2. A method of forming memory cells in an array including:

forming a first memory cell relative to a substrate, the first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell relative to the substrate, the second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node formed on the substrate, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate extending above the substrate, between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors, and wherein forming the isolation gate includes forming a second gate dielectric comprising an isolation gate dielectric to have a second thickness that is greater than the first thickness.

3. A method of forming memory cells in an array including:

forming a first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors and further comprising forming an isolation gate dielectric by:

forming a shallow trench;

forming an isolation gate dielectric by a deposition process that fills the shallow trench with a dielectric material; and

processing the isolation gate dielectric to have a second thickness that is greater than the first thickness.

4. The method of claim 3 , further comprising implanting dopant into the shallow trench prior to forming the isolation gate dielectric.

5. A method of forming memory cells in an array including:

forming a first memory cell relative to a substrate, the first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell relative to the substrate, the second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node formed on the substrate, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate, extending above the substrate, between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors and further comprising forming an isolation gate dielectric to have a second thickness that is between thirty percent and seventy percent thicker than the first thickness, wherein forming the first and second memory cells comprises forming first and second DRAM memory cells.

6. A method of forming memory cells in an array including:

forming a first memory cell relative to a substrate, the first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell relative to the substrate, the second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node formed on the substrate, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate, extending above the substrate, between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors and further comprising forming an isolation gate dielectric to have a second thickness that is between thirty percent and seventy percent thicker than the first thickness, wherein the second thickness is in a range of from about seventy Angstroms to about one hundred Angstroms.

7. The method of claim 2 , wherein forming the first and second memory cells includes forming the first and second gate dielectrics to be silicon dioxide.

8. A method of forming memory cells in an array including:

forming a first memory cell relative to a substrate, the first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell relative to the substrate, the second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node formed on the substrate, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate, extending above the substrate, between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors and further comprising forming an isolation gate dielectric to have a second thickness that is between thirty percent and seventy percent thicker than the first thickness, wherein forming memory cells comprises forming DRAM memory cells.

9. A method of forming memory cells in an array including:

forming a first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage, wherein forming first and second memory cells includes forming first and second DRAM memory cells; and

forming an isolation gate between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming first and second access transistors includes forming first gate dielectrics with a first thickness for each of the first and second access transistors and further comprising forming an isolation gate dielectric by:

forming a shallow trench;

forming an isolation gate dielectric by a deposition process that fills the shallow trench with a dielectric material; and

planarizing the dielectric material using chemical-mechanical polishing, wherein the isolation gate dielectric is formed to have a second thickness that is greater than the first thickness.

10. The method of claim 9 , wherein the first and second data storage elements comprise capacitors.

11. A method of forming memory cells in an array, comprising:

forming a first memory cell including a first access transistor and a first data storage element, a first load electrode of the first access transistor being coupled to the first data storage element via a first storage node;

forming a second memory cell including a second access transistor and a second data storage element, a first load electrode of the second access transistor being coupled to the second data storage element via a second storage node, wherein forming the first and second memory cells includes forming the first and second access transistors to have a first threshold voltage; and

forming an isolation gate between the first and second storage nodes and configured to provide electrical isolation therebetween, wherein forming the isolation gate includes forming the isolation gate to have a second threshold voltage greater than the first threshold voltage, wherein forming the first and second memory cells includes forming DRAM memory cells, and further includes forming each of the access transistors to include a second load electrode coupled to a respective bitline contact, wherein forming the first and second memory cells comprises forming first and second DRAM memory cells.

12. The method of claim 11 , wherein the first and second data storage elements comprise capacitors.