Silicon nitride from aminosilane using PECVD

1 . A process for decreasing the wet etch rate of plasma enhanced chemical vapor deposition silicon nitride on a substrate using a silicon precursor having at least one Si—N bond and a reagent selected from the group consisting of: (i) nitrogen; (ii) argon; (iii) xenon; (iv) helium; (v) mixtures of (ii), (iii) and/or (iv); (vi) ammonia and/or hydrazine; and (vii) the combination of an inert gas of (ii), (iii), (iv) or (v) with less than 1% ammonia in relation to the inert gas.

2 . The process of claim 1 wherein the silicon precursor has the formula:

(t-C 4 H 9 NH) 2 SiH 2 .

3 . The process of claim 1 wherein the temperature of the substrate is less than 800° C.

4 . The process of claim 1 wherein the temperature of the substrate is less than 500° C.

5 . The process of claim 1 wherein the pressure is at least approximately 1 mTorr.

6 . The process of claim 1 wherein the reagent is nitrogen.

7 . The process of claim 1 wherein the reactant is helium.

8 . The process of claim 1 wherein the reactant is ammonia and/or hydrazine.

9 . The process of claim 1 wherein the substrate is selected from the group consisting of silicon, silicon dioxide or a metal.

10 . The process of claim 1 wherein the substrate is an electronic device.

11 . The process of claim 1 wherein the substrate is a flat panel display.

12 . A plasma enhanced chemical vapor deposition of low etch rate, low hydrogen content silicon nitride in a reaction zone, comprising the steps of:

a) heating a substrate to a temperature less than or equal to 800° C. in said zone;

b) maintaining the substrate in a vacuum at a pressure at least approximately 1 mTorr in said zone;

c) introducing into said zone a silicon precursor of the formula:

(t-C 4 H 9 NH) 2 SiH 2 and a reagent selected from the group consisting of (i) nitrogen; (ii) argon; (iii) xenon; (iv) helium; (v) mixtures of (ii), (iii) and/or (iv); (vi) ammonia and/or hydrazine; and (vii) the combination of an inert gas of (ii), (iii), (iv) or (v) with less than 1% ammonia in relation to the inert gas; and

d) maintaining the conditions of a) through c) sufficient to cause a film of low etch rate, low hydrogen content silicon nitride to deposit on the substrate.

13 . A plasma enhanced chemical vapor deposition of high density silicon nitride in a reaction zone, comprising the steps of:

a) heating a substrate to a temperature less than or equal to 500° C. in said zone;

b) maintaining the substrate in a vacuum at a pressure at least approximately 1 mTorr in said zone;

c) introducing into said zone a silicon precursor of the formula:

(t-C 4 H 9 NH) 2 SiH 2 and nitrogen; and

d) maintaining the conditions of a) through c) sufficient to cause a film of low etch rate, low hydrogen content silicon nitride to deposit on the substrate.

14 . A plasma enhanced chemical vapor deposition of dense silicon nitride in a reaction zone, comprising the steps of:

a) heating a substrate to a temperature less than or equal to 500° C. in said zone;

b) maintaining the substrate in a vacuum at a pressure at least approximately 1 mTorr in said zone;

c) introducing into said zone a silicon precursor of the formula: (t-C 4 H 9 NH) 2 SiH 2 and helium; and

d) maintaining the conditions of a) through c) sufficient to cause a film of low etch rate, low hydrogen content silicon nitride to deposit on the substrate.

15 . A plasma enhanced chemical vapor deposition of low etch rate, low hydrogen content silicon nitride in a reaction zone, comprising the steps of:

a) heating a substrate to a temperature less than or equal to 500° C. in said zone;

b) maintaining the substrate in a vacuum at a pressure at least approximately 1 mTorr in said zone;

c) introducing into said zone a silicon precursor of the formula:

(t-C 4 H 9 NH) 2 SiH 2 and an inert gas selected from the group consisting of: argon, xenon, helium and mixtures thereof; with less than 1% ammonia in relation to the inert gas; and

d) maintaining the conditions of a) through c) sufficient to cause a film of low etch rate, low hydrogen content silicon nitride to deposit on the substrate.

16 . A process for producing a silicon nitride film of reduced etch rate on a substrate, comprising; conducting a plasma enhanced chemical vapor deposition of an aminosilane and a reagent selected from the group consisting of: (i) nitrogen; (ii) argon; (iii) xenon; (iv) helium; (v) mixtures of (ii), (iii) and/or (iv); (vi) ammonia and/or hydrazine; and (vii) the combination of an inert gas of (ii), (iii), (iv) or (v) with less than 1% ammonia in relation to the inert gas.

17 . A process for producing a silicon nitride film of reduced etch rate using plasma enhanced chemical vapor deposition of low etch rate, low hydrogen content silicon nitride in a reaction zone, comprising the steps of:

a) heating a substrate to a temperature less than or equal to 500° C. in said zone;

b) maintaining the substrate in a vacuum at a pressure in the range of approximately 20 mTorr-2 Torr in said zone;

c) introducing into said zone an aminosilane of the formula: [(R x NH (2-x) ] y SiH (3-y) where x=1,2; y=1,2,3; R=alkyl, aryl, arylalkyl, alkenyl or alkynyl and a reagent selected from the group consisting of (i) nitrogen; (ii) argon; (iii) xenon; (iv) helium; (v) mixtures of (ii), (iii) and/or (iv); (vi) ammonia and/or hydrazine; and (vii) the combination of an inert gas of (ii), (iii), (iv) or (v) with less than 1% ammonia in relation to the inert gas; and

d) maintaining the conditions of a) through c) sufficient to cause a film of low etch rate, low hydrogen content silicon nitride to deposit on the substrate.

18 . A process for the plasma enhanced chemical vapor deposition of low etch rate, low hydrogen content silicon nitride on a substrate using an aminosilane and a reactant selected from the group consisting of nitrogen, argon, xenon, helium and 18:1 to 33:1 ammonia in relation to the aminosilane.