Sulfonamide compound, polymer compound, resist material and pattern formation method
View Patent ↗A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
1. A pattern formation method comprising the steps of:
forming a resist film made of a resist material containing a base polymer including a polymer compound having a unit represented by a general formula of the following Chemical Formula 4;
performing pattern exposure by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
2. The pattern formation method of claim 1 ,
wherein said protecting group released by an acid is an acetal group.
3. The pattern formation method of claim 1 ,
wherein said resist material further includes an acid generator for generating an acid through irradiation with light.
4. The pattern formation method of claim 3
wherein said resist material further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.
5. The pattern formation method of claim 1 ,
wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.
6. The pattern formation method of claim 1 ,
wherein said resist film has transmittance of 40% or more against said exposing light.
7. The pattern formation method of claim 1 ,
wherein said base polymer has a trifluoromethyl group on a side chain thereof.
8. A pattern formation method comprising the steps of:
forming a resist film made of a resist material containing a base polymer including a polymer compound having a unit represented by a general formula of the following Chemical Formula 5;
supplying a liquid onto said resist film;
performing pattern exposure, with said liquid provided on said resist film, by selectively irradiating said resist film with exposing light of high energy beams of a wavelength not shorter than a 100 nm band and not longer than a 300 nm band or not shorter than a 1 nm band and not longer than a 30 nm band or electron beams; and
forming a resist pattern by developing said resist film after the pattern exposure:
wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
9. The pattern formation method of claim 8 ,
wherein said protecting group released by an acid is an acetal group.
10. The pattern formation method of claim 8 ,
wherein said resist material further includes an acid generator for generating an acid through irradiation with light.
11. The pattern formation method of claim 10 ,
wherein said resist material further includes a dissolution inhibitor for inhibiting dissolution of said base polymer.
12. The pattern formation method of claim 8 ,
wherein said exposing light is KrF laser, ArF laser, F 2 laser, Kr 2 laser, KrAr laser, Ar 2 laser or soft X-rays.
13. The pattern formation method of claim 8 ,
wherein said liquid is water or perfluoropolyether.
14. The pattern formation method of claim 8 ,
wherein said resist film has transmittance of 40% or more against said exposing light.
15. The pattern formation method of claim 8 ,
wherein said base polymer has a trifluoromethyl group on a side chain thereof.