Chip structure and process for forming the same
A chip structure comprises a substrate, a first built-up layer, a passivation layer and a second built-up layer. The substrate includes many electric devices placed on a surface of the substrate. The first built-up layer is located on the substrate. The first built-up layer is provided with a first dielectric body and a first interconnection scheme, wherein the first interconnection scheme interlaces inside the first dielectric body and is electrically connected to the electric devices. The first interconnection scheme is constructed from first metal layers and plugs, wherein the neighboring first metal layers are electrically connected through the plugs. The passivation layer is disposed on the first built-up layer and is provided with openings exposing the first interconnection scheme. The second built-up layer is formed on the passivation layer. The second built-up layer is provided with a second dielectric body and a second interconnection scheme, wherein the second interconnection scheme interlaces inside the second dielectric body and is electrically connected to the first interconnection scheme. The second interconnection scheme is constructed from at least one second metal layer and at least one via metal filler, wherein the second metal layer is electrically connected to the via metal filler. The thickness, width, and cross-sectional area of the traces of the second metal layer are respectively larger than those of the first metal layers.
1 - 165 . (canceled)
166 . The process for fabricating a chip structure, comprising:
Step 1: providing a wafer with a passivation layer, the passivation layer disposed on a surface layer of the wafer;
Step 2: forming a dielectric sub-layer over the passivation layer of the wafer, the dielectric sub-layer having at least one opening passing through the dielectric sub-layer,
Wherein when Step 2 is performed, a photo mask including a first region and a second region is used, the energy of the light passing through the first region stronger than that of the light passing through the second region, an exposing process and a developing process used to form at least one via metal opening passing through the dielectric sub-layer and at least one metal-layer opening not passing through the dielectric sub-layer, the via metal opening connecting with the metal-layer opening, further, during the exposing process, the first region aligned with where the via metal opening is to be formed, and the second region aligned with where the metal-layer opening is to be formed;
Step 3: forming at least one conductive metal over the dielectric sub-layer and into the opening; and
Step 4: removing the conductive metal formed outside the opening.
167 . The process according to claim 166 , wherein the first region of the photo mask is like a through-hole type.
168 . The process according to claim 166 , wherein the first region of the photo mask is like a type of a semi-transparent membrane.
169 . A process for forming a patterned dielectric sub-layer, a dielectric body of an built-up layer can be constructed from the at least one patterned dielectric sub-layer, the process for forming a patterned dielectric sub-layer comprising:
providing a dielectric sub-layer that is photosensitive; and
performing a photolithography process, in the meanwhile, a photo mask provided with a first region and a second region, the energy of the light passing through the first region stronger than that of the light passing through the second region, an exposing process and a developing process used to form at least one via metal opening passing through the dielectric sub-layer and at least one metal-layer opening not passing through the dielectric sub-layer, the via metal opening connecting with the metal-layer opening, further, during the exposing process, the first region aligned with where the via metal opening is to be formed, and the second region aligned with where the metal-layer opening is to be formed.
170 . The process according to claim 169 , wherein the first region of the photo mask is like a through-hole type.
171 . The process according to claim 169 , wherein the first region of the photo mask is like a type of a semi-transparent membrane.