Thin film bulk acoustic resonator, method for producing the same, filter, composite electronic component device, and communication device
A thin film bulk acoustic resonator includes a piezoelectric film, and a pair of electrodes between which the piezoelectric film is interposed. The piezoelectric film includes an outer region extending outwards from at least a portion of the periphery of a resonator portion composed of the pair of electrodes and the piezoelectric film. The outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves.
1. A thin film bulk acoustic resonator comprising:
a piezoelectric film;
a pair of electrodes between which the piezoelectric film is interposed; and
a resonator portion including the electrodes and a region of the piezoelectric film between the electrodes, wherein the piezoelectric film includes an outer region extending outwards from at least a portion of a periphery of the resonator portion, and the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves,
and wherein the acoustic damping region, in the piezoelectric film, is composed of the same material as that of any other region of the piezoelectric film, and the acoustic damping region has a lower crystallinity than that of any other region of the piezoelectric film, and
any element immediately underlying the acoustic damping region has a coarser surface than that of a lower one of the pair of electrodes of the resonator portion.
2. A thin film bulk acoustic resonator comprising:
a piezoelectric film:
a pair of electrodes between which the piezoelectric film is interposed; and
a resonator portion including the electrodes and a region of the piezoelectric film between the electrodes, wherein the piezoelectric film includes an outer region extending outwards from at least a portion of a periphery of the resonator portion, and the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves,
and wherein the acoustic damping region, in the piezoelectric film, is composed of the same material as that of any other region of the piezoelectric film, and the acoustic damping region has a lower crystallinity and a greater full width at half maximum of an X-ray diffraction rocking curve than those of any other region of the piezoelectric film, and the acoustic damping region includes homogenous atoms or heterogenous atoms not existing in any other region of the piezoelectric film.
3. A thin film bulk acoustic resonator comprising:
a piezoelectric film;
a pair of electrodes between which the piezoelectric film is interposed; and
a resonator portion including the electrodes and a region of the piezoelectric film between the electrodes, wherein the piezoelectric film includes an outer region extending outwards from at least a portion of a periphery of the resonator portion, and the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves,
and wherein the acoustic damping region, in the piezoelectric film, is composed of the same material as that of any other region of the piezoelectric film, and the acoustic damping region has a lower crystallinity and a greater full width at half maximum of an X-ray diffraction rocking curve than those of any other region of the piezoelectric film, and homogenous ions or heterogenous ions not existing in any region of the piezoelectric film other than the acoustic damping region are implanted into the acoustic damping region.
4. A method for producing a thin film bulk acoustic resonator, comprising:
forming a lower electrode on or above a substrate;
roughening a part of a surface of any element immediately underlying a piezoelectric film;
forming the piezoelectric film on or above the lower electrode;
forming an upper electrode on or above the piezoelectric film; and
forming a resonator portion including the upper and lower electrodes and a region of the piezoelectric film between the upper and lower electrodes, wherein,
said forming the piezoelectric film comprises:
forming the piezoelectric film so as to have a region extending outwards from at least a portion of a periphery of the resonator portion; and
ensuring, by forming the piezoelectric film above the part of the surface having been roughened, that at least a portion of the region of the piezoelectric film extending outwards has a lower crystallinity than that of the resonator portion of the piezoelectric film, thereby forming an acoustic damping region for damping acoustic waves.
5. A composite electronic component device comprising a thin film bulk acoustic resonator filter including a plurality of interconnected thin film bulk acoustic resonators, each thin film bulk acoustic resonator including:
a piezoelectric film;
an upper electrode and a lower electrode between which the piezoelectric film is interposed; and
a resonator portion including the upper and lower electrodes and a region of the piezoelectric film between the upper and lower electrodes, wherein
the piezoelectric film in at least one of the plurality of thin film bulk acoustic resonators includes an outer region extending outwards from at least a portion of a periphery of the resonator portion,
the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves, wherein the acoustic damping region, in the piezoelectric film, is composed of the same material as that of any other region of the piezoelectric film, and the acoustic damping region has a lower crystallinity than that of any other region of the piezoelectric film, and any element immediately underlying the acoustic damping region has a coarser surface than that of the lower one of the pair of electrodes of the resonator portion, and
the acoustic damping region is provided at least between those of the plurality of thin film bulk acoustic resonators having different resonance frequencies.
6. A communication device comprising a thin film bulk acoustic resonator filter including a plurality of interconnected thin film bulk acoustic resonators, each thin film bulk acoustic resonator including:
a piezoelectric film;
an upper electrode and a lower electrode between which the piezoelectric film is interposed; and
a resonator portion including the upper and lower electrodes and a region of the piezoelectric film between the upper and lower electrodes, wherein
the piezoelectric film in at least one of the plurality of thin film bulk acoustic resonators includes an outer region extending outwards from at least a portion of a periphery of the resonator portion,
the outer region includes, in at least a portion thereof, an acoustic damping region for damping acoustic waves, wherein the acoustic damping region, in the piezoelectric film, is composed of the same material as that of any other region of the piezoelectric film, and the acoustic damping region has a lower crystallinity than that of any other region of the piezoelectric film, and any element immediately underlying the acoustic damping region has a coarser surface than that of the lower one of the pair of electrodes of the resonator portion, and
the acoustic damping region is provided at least between those of the plurality of thin film bulk acoustic resonators having different resonance frequencies.