IP Library Granted Patent US 7,118,982
Granted Patent B2
US 7,118,982 · App. 10/935,795 · Granted Oct 10, 2006

Emitter and method of making

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Quick Facts
Patent No.
US 7,118,982
App. No.
10/935,795
Granted
Oct 10, 2006
Kind
B2
Abstract

An emitter includes an electron source and a cathode. The cathode has an emissive surface. The emitter further includes a continuous anisotropic conductivity layer disposed between the electron source and the emissive surface of the cathode. The anisotropic conductivity layer has an anisotropic sheet resistivity profile and provides for substantially uniform emissions over the emissive surface of the emitter.

Claims (12)

1. A method of creating an emitter, comprising the steps of:

applying a continuous anisotropic conductivity layer having an anisotropic conductivity profile onto the electron source by artificially assembling an array of emission sites with a serial back resistance, including the steps of,

applying a layer of resistive material;

applying a template on the layer of resistive material, the template defining the location of the emission sites;

doping the templated resistive material to create a resistive layer with an anisotropic conductivity profile wherein the conductivity is highest in the thickness direction of the resistive layer to create a pn junction diode; and

creating an emission source on the anisotropic conductivity layer.

2. A method of creating an emitter, comprising the steps of:

applying a continuous anisotropic conductivity layer having an anisotropic conductivity profile onto the electron source by artificially assembling an array of emission sites with a serial back resistance, including the steps of,

applying a layer of resistive material including applying a layer of epitaxial semiconductive material;

applying a template on the layer of resistive material, the template defining the location of the emission sites;

doping the templated resistive material to create a resistive layer with an anisotropic conductivity profile wherein the conductivity is highest in the thickness direction of the resistive layer; and

creating an emission source on the anisotropic conductivity layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2011
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.; HEWLETT-PACKARD COMPANY
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 026198/0139 →