A polishing pad is useful planarizing semiconductor substrates. The polishing pad comprises a polymeric material having a porosity of at least 0.1 volume percent, a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa and a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
1. A polishing pad useful for planarizing semiconductor substrates, the polishing pad comprising a polyurethane polymeric material having a porosity of at least 0.1 volume percent, the polyurethane polymeric material being formed from a prepolymer reaction product of toluene diisocyanate and polytetramethylene ether glycol with 4,4′-methylene-bis-o-chloroaniline and the prepolymer reaction product having a 5.5 to 8.6 weight percent NCO and an NH 2 to NCO stoichiometric ratio of 80 to 110 percent.
2. The polishing pad of claim 1 wherein the prepolymer reaction product has a 6.3 to 8.5 weight percent NCO.
3. The polishing pad of claim 1 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
4. The polishing pad of claim 1 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 395 to 700 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 120 to 350 MPa.
5. The polishing pad of claim 1 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 405 to 600 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 140 to 300 MPa.
6. The polishing pad of claim 1 wherein the an NH 2 to NCO stoichiometric ratio of 80 to 100 percent.
7. The polishing pad of claim 1 wherein the polyurethane has a cross-linked structure.
8. The polishing pad of claim 1 wherein the polymeric material is polyurethane and the polymeric material has a density of 0.5 to 1.05 g/cm 3 .
9. The polishing pad of claim 8 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
10. The polishing pad of claim 8 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 395 to 700 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 120 to 350 MPa.
11. The polishing pad of claim 8 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 405 to 600 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 140 to 300 MPa.
12. The polishing pad of claim 8 wherein the an NH 2 to NCO stoichiometric ratio of 80 to 100 percent.
13. The polishing pad of claim 8 wherein the polyurethane has a cross-linked structure.
14. The polishing pad of claim 8 wherein the polymeric material is polyurethane and the polymeric material has a density of 0.5 to 1.05 g/cm 3 .
15. A polishing pad useful for planarizing semiconductor substrates, the polishing pad comprising a polyurethane polymeric material having a porosity of at least 0.1 volume percent, the polyurethane polymeric material being formed from a prepolymer reaction product of toluene diisocyanate and polytetramethylene ether glycol with 4,4′-methylene-bis-o-chloroaniline and the prepolymer reaction product having a 6.3 to 8.5 weight percent NCO and an NH 2 to NCO stoichiometric ratio of 80 to 110 percent and a Shore D hardness of 20 to 60.
16. A method of polishing a semiconductor substrate including the step of polishing the semiconductor substrate with a polishing pad useful for planarizing semiconductor substrates, the polishing pad comprising a polyurethane polymeric material having a porosity of at least 0.1 volume percent, the polyurethane polymeric material being formed from a prepolymer reaction product of toluene diisocyanate and polytetramethylene ether glycol with 4,4′-methylene-bis-o-chloroaniline and the prepolymer reaction product having a 6.3 to 8.5 weight percent NCO and an NH 2 to NCO stoichiometric ratio of 80 to 110 percent and a shore hardness of 20 to 60.
17. The method of claim 16 wherein the prepolymer reaction product has a 6.3 to 8.5 weight percent NCO.
18. The method of claim 16 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
19. The method of claim 16 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 395 to 700 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 120 to 350 MPa.
20. The method of claim 16 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 405 to 600 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 140 to 300 MPa.
21. The method of claim 16 wherein the an NH 2 to NCO stoichiometric ratio of 80 to 100 percent.
22. The method of claim 16 wherein the polyurethane has a cross-linked structure.
23. The method of claim 16 wherein the polymeric material is polyurethane and the polymeric material has a density of 0.5 to 1.05 g/cm 3 .
24. A method of polishing a semiconductor substrate including the step of polishing the semiconductor substrate with a polishing pad useful for planarizing semiconductor substrates, the polishing pad comprising a polyurethane polymeric material having a porosity of at least 0.1 volume percent, the polyurethane polymeric material being formed from a prepolymer reaction product of toluene diisocyanate and polytetramethylene ether glycol with 4,4′-methylene-bis-o-chloroaniline and the prepolymer reaction product having a 6.3 to 8.5 weight percent NCO and an NH 2 to NCO stoichiometric ratio of 80 to 110 percent and a Shore D hardness of 20 to 60.
25. The method of claim 24 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 385 to 750 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 100 to 400 MPa.
26. The method of claim 24 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 395 to 700 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 120 to 350 MPa.
27. The method of claim 24 wherein the polishing pad comprises a polymeric material having a KEL energy loss factor at 40° C. and 1 rad/sec of 405 to 600 1/Pa, a modulus E′ at 40° C. and 1 rad/sec of 140 to 300 MPa.
28. The method of claim 24 wherein the an NH 2 to NCO stoichiometric ratio of 80 to 100 percent.
29. The method of claim 24 wherein the polyurethane has a cross-linked structure.
30. The method of claim 24 wherein the polymeric material is polyurethane and the polymeric material has a density of 0.5 to 1.05 g/cm 3 .