Gallium-nitride based light emitting diode structure with enhanced light illuminance
View Patent ↗Disclosed is a multi-quantum-well light emitting diode, which makes enormous adjustments and improvements over the conventional light emitting diode, and further utilizes a transparent contact layer of better transmittance efficiency, so as to significantly raise the illuminance of this light emitting diode and its light emission efficiency. The multi-quantum-well light emitting diode has a structure including: substrate, buffer layer, n-type gallium-nitride layer, active light-emitting-layer, p-type cladding layer, p-type contact layer, barrier buffer layer, transparent contact layer, and the n-type electrode layer.
1. A gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance, comprising:
a substrate made of Sapphire;
a buffer layer formed on the said substrate and made of aluminum-gallium-indium-nitride (Al 1-x-y Ga x In y N), wherein 0≦x,1, 0≦y<1, and x+y≦1;
an n-type gallium nitride (GaN) layer formed on the said buffer layer;
an active light-emitting-layer formed on the n-type gallium-nitride(GaN) layer and made of indium-gallium-nitride (InGaN);
a p-type cladding layer formed on the said active light-emitting-layer and made of Mg-doped aluminum-indium-nitride (Al 1-x In x N), wherein 0≦x<1;
a p-type contact layer formed on the p-type cladding layer and made of gallium-nitride (GaN);
a short-period super-lattice barrier buffer layer formed on the p-type contact layer and made of magnesium-nitride/indium-gallium-nitride (MgN/In x Ga 1-x N);
a transparent contact layer formed on the short-period super-lattice barrier buffer layer and made of indium-tin-oxide (ITO); and
an n-type electrode layer formed on n-type gallium nitride (GaN) layer and made of Ti/Al or Cr/Au.
2. The gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance as claimed in claim 1 , wherein the short-period super-lattice barrier buffer layer is made of magnesium-nitride/undoped-indium-gallium-nitride (MgN/In x Ga 1-x N), and having a configuration of MgN up/In x Ga 1-x N down or MgN down/In x Ga 1-x N up, the number of repetition of the configuration being 2 or above, and having a thickness is between 2–200 Å respectively.
3. The gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance as claimed in claim 1 , wherein the growth temperature of the short-period super-lattice barrier buffer layer is 500–1200° C.
4. The gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance as claimed in claim 1 , wherein the thickness of the transparent contact layer is less than or equal to 5000 Å.
5. The gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance as claimed in claim 1 , wherein the growth temperature of the transparent contact layer is 100–600° C.
6. The gallium-nitride (GaN) based light emitting diode structure with enhanced light illuminance as claimed in claim 1 , wherein for an n-type transparent conductive oxide (TCO) layer, the transparent contact layer comprises a material selected from a group consisting of ITO, CTO, ZnO:Al, ZnGa 2 O 4 , SnO 2 :Sb, Ga 2 O 3 :Sn, AgInO 2 :Sn, and In 2 O 3 :Zn and wherein for a p-type transparent conductive oxide (TCO) layer, the transparent contact layer comprises a material selected from a group consisting of CuAlO 2 , LaCuOS, NiO, CuGaO 2 , and SrCu 2 O 2 .