IP Library › Assignment 024838/0442
Patent Assignment
Reel/Frame 024838/0442

License

Recorded: 2010-08-17 Pages: 4
Assignor
FORMOSA EPITAXY INCORPORATION
Executed: 2010-02-25
Assignee
JIANG SU CAN YANG OPTOELECTRONIC LTD.
NO. 108, WEIYANG ROAD, YANGZHOU CITY, CHINA
Covered Properties (27)
Manufacturing method of a gallium nitride-based blue light emitting diode (LED) ohmic electrodes
Patent: 6,248,608 →
Application: 09/653,496 →
Structure and Manufacturing Method for Gan Light Emitting Diodes
Patent: 6,914,264 →
Application: 10/283,886 →
Publication: US 2004/0079948
Light Emitting Diode Structure and Manufacture Method Thereof
Patent: 6,967,346 →
Application: 10/633,029 →
Publication: US 2005/0026399
Growth-Selective Structure of Light-Emitting Diode
Patent: 6,753,552 →
Application: 10/633,030 →
Device of White Light-Emitting Diode
Patent: 6,841,804 →
Application: 10/695,506 →
Structure and Manufacturing Method for Nitride-Based Light-Emitting Diodes
Patent: 7,033,949 →
Application: 10/748,558 →
Publication: US 2005/0148194
Gallium-nitride based light-emitting diode epitaxial structure
Patent: 6,979,835 →
Application: 10/940,806 →
Gallium-Nitride Based Light Emitting Diode Structure with Enhanced Light Illuminance
Patent: 7,087,924 →
Application: 10/942,434 →
Publication: US 2006/0038193
Structure of Gan Light-Emitting Diode
Patent: 7,042,018 →
Application: 10/948,401 →
Publication: US 2006/0060873
Gallium-Nitride Based Light-Emitting Diode Structure with High Reverse Withstanding Voltage and Anti-Esd Capability
Patent: 7,180,096 →
Application: 10/964,350 →
Publication: US 2006/0049424
Gallium-Nitride Based Multi-Quantum Well Light-Emitting Diode N-Type Contact Layer Structure
Patent: 7,042,019 →
Application: 10/964,351 →
Publication: US 2006/0081861
High-Brightness Gallium-Nitride Based Light Emitting Diode Structure
Patent: 7,180,097 →
Application: 10/987,518 →
Publication: US 2006/0102930
Light-Emitting Diode Structure
Patent: 7,087,922 →
Application: 10/991,011 →
Publication: US 2006/0102909
High-Brightness Gallium-Nitride Based Light Emitting Diode Structure
Patent: 7,049,638 →
Application: 11/029,584 →
Publication: US 2006/0086942
Gallium-Nitride Based Ultraviolet Photo Detector
Patent: 7,307,291 →
Application: 11/041,491 →
Publication: US 2006/0163681
Gan Led Structure with P-Type Contacting Layer Grown at Low-Temperature and Having Low Resistivity
Patent: 7,105,850 →
Application: 11/050,091 →
Publication: US 2006/0027821
Light Emitting Diode Structure Having Photonic Crystals
Patent: 7,173,289 →
Application: 11/223,654 →
High-Brightness Gallium-Nitride Based Light Emitting Diode Structure
Patent: 7,345,321 →
Application: 11/266,461 →
Publication: US 2006/0145179
High-Brightness Gallium-Nitride Based Light Emitting Diode Structure
Patent: 7,442,962 →
Application: 11/266,462 →
Publication: US 2006/0102921
Light Emitting Diode Chip with Double Close-Loop Electrode Design
Patent: 7,462,868 →
Application: 11/307,877 →
Publication: US 2007/0200120
Light-Emitting Diode Chip
Patent: 7,589,350 →
Application: 11/309,088 →
Publication: US 2007/0069218
Structure of Gan Light-Emitting Diode
Patent: 7,148,519 →
Application: 11/311,615 →
Publication: US 2006/0097273
Light-Emitting Diode Structure with Transparent Window Covering Layer of Multiple Films
Patent: 7,473,939 →
Application: 11/326,314 →
Publication: US 2007/0158667
Light Emitting Semiconductor Bonding Structure and Method of Manufacturing the Same
Patent: 7,374,958 →
Application: 11/380,209 →
Publication: US 2006/0199290
Multi-Directional Light Scattering Led and Manufacturing Method Thereof
Patent: 7,476,912 →
Application: 11/409,003 →
Publication: US 2007/0246711
Light Emitting Diode with Higher Illumination Efficiency
Patent: 7,635,871 →
Application: 12/106,277 →
Publication: US 2009/0189172
Manufacturing Method of Multi-Directional Light Scattering Led
Patent: 7,632,693 →
Application: 12/149,288 →
Publication: US 2008/0241979
Related Assignments (1)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest Sep 9, 2009
From: FORMOSA EPITAXY INCORPORATION
To: LUMENS CO., LTD.; FORMOSA EPITAXY INCORPORATION
Reel/Frame 023196/0646 →