High-brightness gallium-nitride based light emitting diode structure
View Patent ↗A GaN-based LED structure is provided so that the brightness and lighting efficiency of the GaN-based LED are enhanced effectively. The greatest difference between the GaN-based LEDs according to the invention and the prior arts lies in the addition of a thin layer on top of the traditional structure. The thin layer could be formed using silicon-nitride (SiN), or it could have a superlattice structure either made of layers of SiN and undoped indium-gallium-nitride (InGaN), or made of layers SiN and undoped aluminum-gallium-indium-nitride (AlGaInN), respectively. Because of the use of SiN in the thin layer, the surfaces of the GaN-based LEDs would be micro-roughened, and the total internal reflection resulted from the GaN-based LEDs' higher index of refraction than the atmosphere could be avoided.
1. A GaN-based LED structure, comprising:
a substrate;
a first contact layer made of a GaN-based material having a first conduction type located on top of said substrate;
an active layer made of a GaN-based material located on top of said first contact layer;
a second contact layer made of a GaN-based material having a second conduction type opposite to said first conduction type located on top of said active layer; and
a micro-roughened thin layer made of at least a SiN-based material located on top of said second contact layer;
wherein said micro-roughed thin layer contains multiple un-uniformly distributed micro-clusters of said SiN-based material for improving external quantum efficiency by reducing total internal reflection of light inside said GaN-based LED structure.
2. The GaN-based LED structure as claimed in claim 1 , wherein said active layer is made of InGaN.
3. The GaN-based LED structure as claimed in claim 1 , further comprising a buffer layer made of a GaN-based material interposed between said substrate and said first contact layer.
4. The GaN-based LED structure as claimed in claim 3 , wherein said buffer layer is made of Al a Ga b In 1-a-b N (0≦a,b<1, a+b≦1) having a specific composition.
5. The GaN-based LED structure as claimed in claim 1 , further comprising a cladding layer made of a GaN-based material having said second conduction type interposed between said active layer and said second contact layer.
6. The GaN-based LED structure as claimed in claim 1 , wherein said micro-roughened thin layer is made of Si d N e (0<d, e<1) having a specific composition.
7. The GaN-based LED structure as claimed in claim 6 , wherein said micro-roughened thin layer has a thickness between 2 Å and 50 Å.
8. The GaN-based LED structure as claimed in claim 1 , wherein said micro-roughened thin layer has a short-period superlattice structure having at least an Si f N g (0<f, g<1) thin layer and at least an undoped In h Ga 1-h N (0<h≦1) thin layer alternately stacked upon each other.
9. The GaN-based LED structure as claimed in claim 8 , wherein said micro-roughened thin layer has a thickness no more than 200 Å, and each of said Si f N g thin layers and In h Ga 1-h N thin layers has a thickness between 2 Å and 20 Å.
10. The GaN-based LED structure as claimed in claim 1 , wherein said micro-roughened thin layer has a short-period superlattice structure having at least an Si i N j (0<i, j<1) thin layer and at least an undoped Al m In n Ga 1-m-n N (0<m, n<1, m+n<1) thin layer alternately stacked upon each other.
11. The GaN-based LED structure as claimed in claim 10 , wherein said micro-roughened thin layer has a thickness no more than 200 Å, and each of said Si i N j thin layers and Al m In n Ga 1-m-n N thin layers has a thickness between 2 Å and 20 Å.
12. A GaN-based LED device, comprising:
a substrate;
a buffer layer made of Al a Ga b In 1-a-b N (0≦a,b<1, a+b≦1) having a specific composition located on top of an upper side of said substrate;
a first contact layer made of a GaN-based material having a first conduction type located on top of said buffer layer;
an active layer made of InGaN located on top of a part of said first contact layer's upper surface;
a first electrode located on top of another part of said first contact layer's upper surface not covered by said active layer;
a second contact layer made of a GaN-based material having a second conduction type opposite to said first conduction type located on top of said active layer;
a micro-roughened thin layer made of at least a SiN-based material located on top of said second contact layer;
a transparent conductive layer that is one of a metallic conductive layer and a transparent oxide layer located on top of said micro-roughened thin layer's upper surface; and
a second electrode located on top of said transparent conductive layer or on top of another part of said micro-roughened thin layer's upper surface not covered by said transparent conductive layer;
wherein said micro-roughed thin layer contains multiple un-uniformly distributed micro-clusters of said SiN-based material for improving external quantum efficiency by reducing total internal reflection of light inside said GaN-based LED structure.
13. The GaN-based LED device as claimed in claim 12 , wherein said metallic conductive layer is made of a material selected from the group consisting of Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Pd/Au alloy, Pt/Au alloy, Cr/Au alloy, Ni/Au/Be alloy, Ni/Cr/Au alloy, Ni/Pt/Au alloy, and Ni/Pd/Au alloy.
14. The high-brightness GaN-based LED device as claimed in claim 12 , wherein said transparent oxide layer is made of a material selected from the group consisting of ITO, CTO, ZnO:Al, ZnGa 2 O 4 , SnO 2 :Sb, Ga 2 O 3 :Sn, AgInO 2 :Sn, In 2 O 3 :Zn, CuAlO 2 , LaCuOS, NiO, CuGaO 2 , and SrCu 2 O 2 .
15. The high-brightness GaN-based LED device as claimed in claim 12 , wherein said second electrode is made of a material selected from the group consisting of Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN x (x≧0), and WSi y (y≧0).
16. The high-brightness GaN-based LED device as claimed in claim 12 , further comprising a cladding layer made of a GaN-based material having said second conduction type interposed between said active layer and said second contact layer.
17. The GaN-based LED device as claimed in claim 12 , wherein said micro-roughened thin layer is made of Si d N e (0<d, e<1) having a specific composition.
18. The GaN-based LED device as claimed in claim 12 , wherein said micro-roughened thin layer has a thickness between 2 Å and 50 Å.
19. The GaN-based LED device as claimed in claim 12 , wherein said micro-roughened thin layer has a short-period superlattice structure having at least an Si f N g (0<f, g<1) thin layer and at least an undoped In h Ga 1-h N (0<h≦1) thin layer alternately stacked upon each other.
20. The GaN-based LED device as claimed in claim 19 , wherein said micro-roughened thin layer has a thickness no more than 200 Å, and each of said Si f N g thin layers and In h Ga 1-h N thin layers has a thickness between 2 Å and 20 Å.
21. The GaN-based LED device as claimed in claim 12 , wherein said micro-roughened thin layer has a short-period superlattice structure having at least an Si i N j (0<i, j<1) thin layer and at least an undoped Al m In n Ga 1-m-n N (0<m, n<1, m+n<1) thin layer alternately stacked upon each other.
22. The GaN-based LED device as claimed in claim 21 , wherein said micro-roughened thin layer has a thickness no more than 200 Å, and each of said Si i N j thin layers and Al m In n Ga 1-m-n N thin layers has a thickness between 2 Å and 20 Å.
23. The GaN-based LED structure as claimed in claim 1 , wherein said micro-roughened thin layer has a thickness between 10 Å and 50 Å.
24. The GaN-based LED device as claimed in claim 12 , wherein said micro-roughened thin layer has a thickness between 10 Å and 200 Å.