Light-emitting diode chip
View Patent ↗A light-emitting diode chip (LED chip) including a substrate, an electrostatic conducting layer, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer, a first electrode and a second electrode is provided. The electrostatic conducting layer is disposed on the substrate, while the first type doped semiconductor layer is disposed on a partial area of the electrostatic conducting layer. Besides, the active layer is disposed on a partial area of the first type doped semiconductor layer, while the second type doped semiconductor layer is disposed on the active layer. In addition, the first electrode is disposed on the first type doped semiconductor layer, while the second electrode is disposed on the second type doped semiconductor layer. The LED chip of the present invention has an electrostatic conducting layer, which protects the LED from electrostatic discharge damage (ESD damage).
1. An light-emitting diode (LED) chip, comprising:
a substrate;
an electrostatic conducting layer, disposed on the substrate;
a light-emitting stacked layer disposed on the electrostatic conducting layer, wherein there is no via hole within the light-emitting stacked layer, and the light-emitting stacked layer comprises:
a first type doped semiconductor layer, disposed on a partial area of the electrostatic conducting layer;
an active layer, disposed on a partial area of the first type doped semiconductor layer;
a second type doped semiconductor layer, disposed on the active layer;
a first electrode, disposed on the first type doped semiconductor layer; and
a second electrode, disposed on the second type doped semiconductor layer.
2. The LED chip as recited in claim 1 , further comprising a first Schottky contact electrode, disposed on the electrostatic conducting layer, wherein the first Schottky contact electrode is electrically connected to the second electrode.
3. The LED chip as recited in claim 2 , further comprising a first conductive wire, wherein the first conductive wire is electrically connected to the first Schottky contact electrode and the second electrode.
4. The LED chip as recited in claim 1 , wherein the first type doped semiconductor layer is an N-type doped semiconductor layer, while the second type doped semiconductor layer is a P-type doped semiconductor layer.
5. The LED chip as recited in claim 1 , wherein the material of the electrostatic conducting layer comprises gallium nitride (GaN) based material.
6. The LED chip as recited in claim 1 , wherein the active layer comprises a multi-quantum-well layer (MQW layer).
7. The LED chip as recited in claim 1 , wherein the light-emitting stacked layer further comprises:
a first type doped cladding layer disposed between the first type doped semiconductor layer and the active layer, and
a second type doped cladding layer disposed between the second type doped semiconductor layer and the active layer.
8. The LED chip as recited in claim 1 , further comprising a buffer layer disposed between the substrate and the electrostatic conducting layer.
9. The LED chip as recited in claim 1 , wherein the electrostatic conducting layer entirely covers the substrate.
10. The LED chip as recited in claim 1 , wherein only a portion area of a top surface of the first type doped semiconductor layer is covered by the active layer.
11. The LED chip as recited in claim 1 , wherein a sidewall of the first type doped semiconductor layer is not aligned with a sidewall of the electrostatic conducting layer.
12. The LED chip as recited in claim 2 , wherein only a portion area of a top surface of the electrostatic conducting layer is covered by the light-emitting stacked layer, and the first Schottky contact electrode is disposed on the top surface of the electrostatic conducting layer uncovered by the light-emitting stacked layer.