Gallium-nitride based ultraviolet photo detector
View Patent ↗A structure for a gallium-nitride (GaN) based ultraviolet photo detector is provided. The structure contains an n-type contact layer, a light absorption layer, a light penetration layer, and a p-type contact layer, sequentially stacked on a substrate from bottom to top in this order. The layers are all made of aluminum-gallium-indium-nitride (AlGaInN) compound semiconductors. By varying the composition of aluminum, gallium, and indium, the layers, on one hand, can achieve the desired band gaps so that the photo detector is highly responsive to ultraviolet lights having specific wavelengths. On the other hand, the layers have compatible lattice constants so that problems associated with excessive stress are avoided and high-quality epitaxial structure is obtained. The structure further contains a positive electrode, a light penetration contact layer, and an anti-reflective coating layer on top of the p-type contact layer, and a negative electrode on the n-type contact layer.
1. A GaN-based UV photo detector structure, comprising:
a substrate made of a material selected from the group consisting of sapphire, 6H—SiC, 4H—SiC, Si, ZnO, GaAs, MgAl 2 O 4 , and an oxide monocrystalline having a lattice constant compatible with those of nitride semiconductors;
an n-type contact layer having a thickness between 3000 Å and 40000 Å made of n-type doped Al a Ga b In 1−a−b N (0≦a,b≦1, a+b≦1) having a specific composition located on top of an upper side of said substrate;
a light absorption layer having a thickness between 100 Å and 10000 Å made of undoped Al c Ga d In 1−c−d N (0≦c,d≦1, c+d≦1) having a band gap greater than 3.4 eV located on top of said n-type contact layer's upper surface;
a negative electrode made of Ti/Al alloy located on top of a part of said n-type contact layer's upper surface;
a light penetration layer having a wider band gap than that of said light absorption layer located on top of said light absorption layer comprising a superlattice structure formed by stacking a plurality of intermediate layers, each of said intermediate layers further comprising two base layers made of p-type doped Al e Ga f In 1−e−f N and Al g Ga h In 1−g−h N (0≦e,f,g,h≦1, e+f≦1, g+h≦1) respectively, and each of said base layers having a specific composition and a thickness between 50 Å and 200 Å, both independent of other base layers;
a p-type contact layer having a thickness between 20 Å and 2000 Å made of p-type doped Al i Ga j In 1−i−j N (0≦i,j≦1, i+j≦1) having a specific composition located on top of said light penetration layer;
a light penetration contact layer being one selected from the group consisting of a metallic conductive layer having a thickness between 20 Å and 200 Å, and a transparent oxide layer having a thickness between 200 Å and 3000 Å, located on top of a part of said p-type contact layer's upper surface;
a positive electrode made of Ni/Au alloy located on top of another part of said p-type contact layer's upper surface not covered by said light penetration contact layer; and
an anti-reflective coating layer made of one selected from the group consisting of SiO 2 , SiN 4 , TiO 2 , and a Distributed Bragg Reflector made of SiO 2 /TiO 2 located on top of said light penetration contact layer.
2. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said light absorption layer is made of undoped Al c Ga d In 1−c−d N (0≦c,d≦1, c+d≦1) having a specific composition.
3. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said light absorption layer is made of In-doped Al m Ga 1−m N (0≦m≦1) having a specific composition.
4. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said light absorption layer has a superlattice structure comprising a plurality of intermediate layers, each of said intermediate layers comprises two base layers made of undoped Al p Ga q In 1−p−q N and Al r Ga s In 1−r−s N (0≦p,q,r,s≦1, p+q≦1, r+s≦1) respectively, and each of said base layers has a specific composition and a thickness between 50 Å and 200 Å, both independent of other base layers.
5. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said light absorption layer has a superlattice structure comprising a plurality of intermediate layers, each of said intermediate layers comprises two base layers made of In-doped Al u Ga 1−u N and Al w Ga 1−w N (0≦u,w≦1) respectively, and each of said base layers has a specific composition and a thickness between 50 Å and 200 Å, both independent of other base layers.
6. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said metallic conductive layer is made of a material selected from the group consisting of Ni/Au alloy, Ni/Pt alloy, Ni/Pd alloy, Ni/Co alloy, Pd/Au alloy, Pt/Au alloy, Ti/Au alloy, Cr/Au alloy, Sn/Au alloy, Ta/Au alloy, TiN, TiWN x (x≧0), and WSi y (y≧0).
7. The GaN-based UV photo detector structure as claimed in claim 1 , wherein said transparent oxide layer is made of a material selected from the group consisting of ITO, CTO, ZnO:Al, ZnGa 2 O 4 , SnO 2 :Sb, Ga 2 O 3 :Sn, AgInO 2 :Sn, In 2 O 3 :Zn, CuAlO 2 , LaCuOS, NiO, CuGaO 2 , and SrCu 2 O 2 .