Light emitting semiconductor bonding structure and method of manufacturing the same
View Patent ↗A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed on the N-type contact layer and the P-type contact layer of the light emitting semiconductor respectively. A first metallic layer and a second metallic layer are formed on the surface of the substrate by means of immersion plating or deposition. The metallic layers are connected electrically to the corresponding electric signal input/output nodes of the electric circuit of the substrate. The first metallic layer and the second metallic layer are bonded onto the N electrode layer and the P electrode layer respectively through supersonic welding, and as such the light emitting semiconductor is bonded onto the substrate, and thus realizing the electric connection in-between.
1. A light emitting semiconductor bonding method for bonding a substrate onto a light emitting semiconductor, the substrate being a structure containing electric circuits, an ohmic contact N electrode layer and an ohmic contact P electrode layer being formed on an N-type contact layer and a P-type contact layer of the light emitting semiconductor respectively, and the method comprising the following steps:
(a) depositing and forming a first metallic layer and a second metallic layer on the substrate with positions of the first metallic layer and the second metallic layer corresponding to those of the N electrode layer and the P electrode layer; and
(b) flip-placing the light emitting semiconductor on the substrate so that the N electrode layer and the P electrode layer correspond to and are stacked on the first metallic layer and the second metallic layer, and then bonding the N electrode layer onto the first metallic layer and bonding the P electrode layer onto the second metallic layer by using ultra-sonic welding technology; wherein the areas of the first metallic layer and the second metallic layer correspond to those of the N electrode layer and the P electrode layer so as to form contact areas of approximately the same size.
2. The light emitting semiconductor bonding method as claimed in claim 1 , wherein the first metallic layer and the second metallic layer correspond to the electric circuit of the substrate and the N electrode layer and the P electrode layer of the light emitting semiconductor, and junction interfaces are deposited on the surfaces of the N electrode layer and the P electrode layer, and are formed between an electric signal input/output node in the electric circuit of the substrate and the N electrode layer and the P electrode layer of the light emitting semiconductor.
3. The light emitting semiconductor bonding method as claimed in claim 1 , wherein the first metallic layer and the second metallic layer are formed on the substrate by means of immersion-plating.
4. The light emitting semiconductor bonding method as claimed in claim 1 , wherein ordinary metal deposition methods are utilized to form the first metallic layer and the second metallic layer on the substrate, the ordinary metal deposition methods including physical vapor deposition (PVD), chemical vapor deposition (CVD), or electroplating.