Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure
View Patent ↗Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.
1. A method for making an active-passive butt-joint structure for reduced parasitic capacitance comprising:
providing a III-V semiconductor compound substrate;
growing an active structure comprised of an active region and two separate confinement heterostructure layers over said substrate;
applying a mask to protect a portion of said active structure;
etching away an unprotected portion of said active structure and an underlying portion of said III-V semiconductor compound substrate to produce an exposed surface on said II-V semiconductor compound substrate;
growing a first undoped III-V semiconductor compound layer over an unprotected portion of said III-V semiconductor compound substrate;
growing a passive waveguide core having a quaternary composition over said first undoped III-V semiconductor compound layer;
growing a second undoped III-V semiconductor compound layer over said passive waveguide core; and
forming a III-V semiconductor compound cladding layer over said active structure and said second undoped III-V semiconductor compound layer.
2. The method of claim 1 wherein a first thickness of said passive waveguide core is selected to mode match to said active structure.
3. The method of claim 1 wherein MOCVD is used to grow said passive waveguide core.
4. The method of claim 1 wherein said first undoped III-V semiconductor compound layer comprises InP.
5. The method of claim 1 wherein said mask is comprised of SiO 2 /Si 3 N 4 .
6. The method of claim 1 wherein a second thickness of said second undoped III-V semiconductor compound layer is selected to reduce the parasitic capacitance of said passive waveguide core.
7. The method of claim 1 wherein said active structure comprises an EA-modulator.
8. The method of claim 1 wherein said active structure comprises a receiver.
9. The method of claim 1 wherein said III-V semiconductor compound substrate comprises N-InP.
10. The method of claim 1 wherein said growing said active structure includes growing said active structure comprised of said active region, said two separate confinement heterostructure layers and two cladding layers over said substrate III-V semiconductor compound substrate such that said active region is positioned between said two separate confinement heterostructure layers and said two separate confinement heterostructure layers are positioned between said two cladding layers.
11. The method of claim 10 wherein one of said two separate confinement heterostructure layers and one of said two cladding layers that are positioned below said active region are positioned next to said first undoped III-V semiconductor compound layer.
12. The method of claim 11 wherein one of said two separate confinement heterostructure layers and one of said two cladding layers that are positioned above said active region are positioned next to said second undoped III-V semiconductor compound layer.
13. A method for making an active-passive butt-joint structure for reduced parasitic capacitance comprising:
providing a III-V semiconductor compound substrate;
growing an active structure comprised of an active region, two separate confinement heterostructure layers and two cladding layers on said III-V semiconductor compound substrate;
applying a mask to protect a portion of said active structure;
etching away an unprotected portion of said active structure and an underlying portion of said III-V semiconductor compound substrate to produce an exposed surface on said III-V semiconductor compound substrate;
growing a first undoped III-V semiconductor compound layer on said exposed surface of said III-V semiconductor compound substrate;
growing a passive waveguide core having a quaternary composition on said first undoped III-V semiconductor compound layer;
growing a second undoped III-V semiconductor compound layer on said passive waveguide core; and
forming a III-V semiconductor compound cladding layer on said active structure and said second undoped III-V semiconductor compound layer.
14. The method of claim 13 wherein a first thickness of said passive waveguide core is selected to mode match to said active structure.
15. The method of claim 13 wherein MOCVD is used to grow said passive waveguide core.
16. The method of claim 13 wherein said first undoped III-V semiconductor compound layer comprises InP.
17. The method of claim 13 wherein a second thickness of said second undoped III-V semiconductor compound layer is selected to reduce the parasitic capacitance of said passive waveguide core.
18. The method of claim 13 wherein said active structure comprises an EA-modulator.
19. The method of claim 13 wherein one of said two separate confinement heterostructure layers and one of said two cladding layers that are positioned below said active region are positioned next to said first undoped III-V semiconductor compound layer.
20. The method of claim 19 wherein one of said two separate confinement heterostructure layers and one of said two cladding layers that are positioned above said active region are positioned next to said second undoped III-V semiconductor compound layer.