Method of forming a diffusion barrier
View Patent ↗A barrier limits the diffusion of a metal, such as copper, into an insulating layer. The barrier may take the form of insulating layer made of a silicon carbide type material which has been exposed to ionised hydrogen subsequent to deposition. Preferably the material contains nitrogen and it is particularly preferred that the material has a dielectric constant of 3.5 or less.
1. A method of forming barrier layer of insulating material which inhibits the diffusion of a metal into an underlying layer, comprising depositing a layer by CVD from an organic silane containing precursor and nitrogen, and hydrogen plasma treating the layer subsequent to or during the CVD deposition to form the barrier layer of insulating material.
2. The method as claimed in claim 1 , wherein the silane precursor is tetramethylsilane.
3. The method as claimed in claim 1 , wherein a flow rate of the nitrogen is at least ten times a flow rate of the silane precursor.
4. The method as claimed in claim 2 , wherein a flow rate of the nitrogen is at least ten times a flow rate of the tetramethylsilane.
5. The method as claimed in claim 1 , wherein the CVD deposition takes place at less than 60° C.
6. The method as claimed in claim 1 , wherein the layer is treated with the hydrogen plasma for a period of time determined by a thickness of the layer.
7. The method as claimed in claim 1 , wherein the layer is treated with the hydrogen plasma for about 40 seconds per hundred nanometers of thickness of the layer.
8. The method as claimed in claim 1 , wherein the nitrogen is nitrogen gas.
9. The method as claimed in claim 8 , wherein the hydrogen plasma is formed from hydrogen gas.
10. The method as claims in claim 1 , wherein a dielectric constant of the insulating material is 3.5 or less.
11. A method of forming a dielectric assembly, comprising:
forming a barrier layer of insulating material on an underlying layer, wherein the barrier layer is formed by depositing a layer by CVD from an organic silane containing precursor and nitrogen, and hydrogen plasma treating the layer subsequent to or during the CVD deposition; and
forming a metal layer on the barrier layer, wherein the barrier layer inhibits the diffusion of the metal layer into the underlying layer.
12. The method as claimed in claim 11 , wherein the CVD deposition takes place at less than 60° C.
13. The method as claimed in claim 11 , wherein the silane precursor is tetramethylsilane.
14. The method as claimed in claim 11 , wherein a flow rate of the nitrogen is at least ten times a flow rate of the silane precursor.
15. The method as claimed in claim 11 , wherein a flow rate of the nitrogen is at least ten times a flow rate of the tetramethylsilane.
16. The method as claimed in claim 11 , wherein the layer is treated with the hydrogen plasma for a period of time determined by a thickness of the layer.
17. The method as claimed in claim 11 , wherein the layer is treated with the hydrogen plasma for about 40 seconds per hundred nanometers of thickness of the layer.
18. The method as claimed in claim 11 , wherein the nitrogen is nitrogen gas.
19. The method as claimed in claim 18 , wherein the hydrogen plasma is formed from hydrogen gas.
20. The method as claims in claim 11 , wherein a dielectric constant of the insulating material is 3.5 or less.