Group III nitride LED with silicon carbide substrate
View Patent ↗The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a Group III nitride active layer positioned between a first n-type Group III nitride cladding layer and a second n-type Group III nitride cladding layer, the respective bandgaps of the first and second n-type cladding layers being greater than the bandgap of the active layer. The semiconductor structure further includes a p-type Group III nitride layer, which is positioned in the semiconductor structure such that the second n-type cladding layer is between the p-type layer and the active layer. The semiconductor structure is built upon a silicon carbide substrate.
1. A semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum, said structure comprising:
an n-type single crystal silicon carbide substrate of a polytype selected from the group consisting of 3 C, 4 H, 6 H, and 15 R;
a p-type layer formed of at least one Group III nitride selected from the group consisting of gallium nitride, indium nitride, and In x Ga 1-x N, where 0<x<1;
an active layer of Al x In y Ga 1-x-y N, where 0≦x<1 and 0≦y≦1 and (x+y)≦1, wherein said active layer is n-type and is positioned between said silicon carbide substrate and said p-type layer;
a first n-type cladding layer of Al x In y Ga 1-x-y N, where 0≦x≦1 and 0≦y≦1 and (x+y)≦1, wherein said first n-type cladding layer is positioned between said silicon carbide substrate and said active layer;
a second n-type cladding layer of Al x In y Ga 1-x-y N, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein said second n-type cladding layer is positioned between said active layer and said p-type layer;
wherein said first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of said active layer.
2. A semiconductor structure according to claim 1 , wherein said first n-type cladding layer has a first surface and a second surface, said first surface of said first n-type cladding layer being in contact with said silicon carbide substrate, and said second surface of said first n-type cladding layer being in contact with said active layer, wherein the composition of said first n-type cladding layer is progressively graded such that the crystal lattice at said first surface of said first n-type cladding layer more closely matches the crystal lattice of said silicon carbide, and the crystal lattice at said second surface of said first n-type cladding layer more closely matches the crystal lattice of said active layer.
3. A semiconductor structure according to claim 1 , wherein said second n-type cladding layer has a first surface and a second surface, said first surface of said second n-type cladding layer being in contact with said active layer, and said second surface of said second n-type cladding layer being in contact with said p-type layer, wherein the composition of said second n-type cladding layer is progressively graded such that the crystal lattice at said first surface of said second n-type cladding layer more closely matches the crystal lattice of said active layer, and the crystal lattice at said second surface of said second n-type cladding layer more closely matches the crystal lattice of said p-type layer.
4. A semiconductor structure according to claim 1 , wherein said p-type layer is magnesium-doped gallium nitride.
5. A semiconductor structure according to claim 4 , wherein said second n-type cladding layer is thick enough to deter migration of magnesium from said p-type layer to said active layer, yet thin enough to facilitate recombination in the active layer.
6. A semiconductor structure according to claim 1 , wherein said p-type layer comprises a superlattice formed from alternating layers of two Group III nitride layers selected from the group consisting of gallium nitride, indium nitride, and In x Ga 1-x N, where 0<x<1.
7. A semiconductor structure according to claim 1 , further comprising a third n-type layer of Al x In y Ga 1-x-y N, where 0≦x≦1 and 0≦y<1 and (x+y)≦1, wherein said third n-type layer is positioned between said second n-type cladding layer and said p-type layer.
8. A semiconductor structure according to claim 7 , wherein said third n-type layer has a first surface and a second surface, said first surface of said third n-type layer being in contact with said p-type layer and said second surface of said third n-type layer being in contact with said second n-type cladding layer.
9. A semiconductor device according to claim 1 , further comprising a conductive buffer layer consisting essentially of aluminum gallium nitride having the formula Al x Ga 1-x-y N, where 0≦x≦1, said conductive buffer layer positioned between said silicon carbide substrate and said first n-type cladding layer.
10. A semiconductor structure according to claim 9 , further comprising an n-type transition layer of a Group III nitride, said transition layer being positioned between said conductive buffer layer and said first n-type cladding layer, and having the same conductivity type as said first n-type cladding layer.
11. A semiconductor structure according to claim 1 , further comprising discrete crystal portions selected from the group consisting of gallium nitride and indium gallium nitride, said discrete crystal portions positioned between said first n-type cladding layer and said silicon carbide substrate, said discrete crystal portions being present in an amount sufficient to reduce the barrier between said first n-type cladding layer and said silicon carbide substrate, but less than an amount that would detrimentally affect the function of any resulting light emitting device formed on said silicon carbide substrate.