Patent Assignment
Reel/Frame 071874/0001
Corrective Assignment to Correct the Name of the Assignee Previously Recorded on Reel 56012 Frame 200. Assignor(S) Hereby Confirms the Assignment.
Recorded: 2025-07-09
Pages: 260
Assignor
CREE, INC.
Executed: 2021-03-01
Assignee
CREELED, INC.
39870 EUREKA DRIVE, NEWARK, CALIFORNIA, 94560
Covered Properties
(276)
Group Iii Nitride Led with Undoped Cladding Layer (5000.137)
Light Emitting Diodes Including Modifications for Light Extraction
Cluster Packaging of Light Emitting Diodes
Group Iii Nitride Based Light Emitting Diode Structures with a Quantum Well and Superlattice, Group Iii Nitride Based Quantum Well Structures and Group Iii Nitride Based Superlattice Structures
Flip-Chip Bonding of Light Emitting Devices and Light Emitting Devices Suitable for Flip-Chip Bonding
Collets for Bonding of Light Emitting Diodes Having Shaped Substrates
Light Emitting Diodes Including Modifications for Submount Bonding
Light Emitting Device Incorporating a Luminescent Material
Methods and Systems for Fabricating Broad Spectrum Light Emitting Devices
Systems for Assembling Components on Submounts and Methods Therefor
Inverted Light Emitting Diode on Conductive Substrate
Reflective Ohmic Contacts for Silicon Carbide Including a Layer Consisting Essentially of Nickel, Methods of Fabricating Same, and Light Emitting Devices Including the Same
Light Emitting Devices for Light Conversion and Methods and Semiconductor Chips for Fabricating the Same
Solid Metal Block Mounting Substrates for Semiconductor Light Emitting Devices
Transmissive Optical Elements Including Transparent Plastic Shell Having a Phosphor Dispersed Therein, and Methods of Fabricating Same
Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods Therefor
Methods of Forming Semiconductor Devices Including Mesa Structures and Multiple Passivation Layers
Etching of Substrates of Light Emitting Devices
Semiconductor Light Emitting Devices Including Flexible Film Having Therein an Optical Element
Light-Emitting Devices Having Coplanar Electrical Contacts Adjacent to a Substrate Surface Opposite an Active Region and Methods of Forming the Same
Methods of Forming Light-Emitting Devices Having an Active Region with Electrical Contacts Coupled to Opposing Surfaces Thereof
Methods of Forming Light-Emitting Devices Having an Antireflective Layer That Has a Graded Index of Refraction
Light-Emitting Devices Having Multiple Encapsulation Layers with at Least One of the Encapsulation Layers Including Nanoparticles and Methods of Forming the Same
Methods of Fabricating Light Emitting Devices Using Mesa Regions and Passivation Layers
Bonding of Light Emitting Diodes Having Shaped Substrates
Led Fabrication via Ion Implant Isolation
Light Emitting Device Incorporating a Luminescent Material
Reflective Optical Elements for Semiconductor Light Emitting Devices
Group Iii Nitride Based Quantum Well Light Emitting Device Structures with an Indium Containing Capping Structure
Light Emitting Devices Having a Reflective Bond Pad and Methods of Fabricating Light Emitting Devices Having Reflective Bond Pads
Flip-Chip Bonding of Light Emitting Devices
Methods of Assembly for a Semiconductor Light Emitting Device Package
Semiconductor Light Emitting Devices Including Patternable Films Comprising Transparent Silicone and Phosphor
Group Iii Nitride Led with Silicon Carbide Substrate
High Efficiency Group Iii Nitride-Silicon Carbide Light Emitting Diode
Group Iii Nitride Based Superlattice Structures
Methods of Processing Semiconductor Wafer Backsides Having Light Emitting Devices (Leds) Thereon
Light Emitting Devices with Self Aligned Ohmic Contacts
Semiconductor Light Emitting Devices and Submounts
Light Emitting Devices for Light Conversion and Methods and Semiconductor Chips for Fabricating the Same
Solid Colloidal Dispersions for Backlighting of Liquid Crystal Displays
Semiconductor Light Emitting Device Mounting Substrates Including a Conductive Lead Extending Therein
High Output Small Area Group Iii Nitride Leds
Light Emitting Diodes Including Barrier Layers/Sublayers
Led with Current Confinement Structure and Surface Roughening
Method for Packaging a Light Emitting Device by One Dispense Then Cure Step Followed by Another
Methods for Packaging of a Semiconductor Light Emitting Device
Semiconductor Light Emitting Devices Including a Luminescent Conversion Element
High Efficiency Group Iii Nitride Led with Lenticular Surface
Semiconductor Light Emitting Circuits Including Light Emitting Diodes and Four Layer Semiconductor Shunt Devices
Substrate Buffer Structure for Group Iii Nitride Devices
Led Bonding Structures and Methods of Fabricating Led Bonding Structures
Light Emitting Devices with Active Layers That Extend into Opened Pits
Led Fabrication via Ion Implant Isolation
Chip-Scale Methods for Packaging Light Emitting Devices and Chip-Scale Packaged Light Emitting Devices
Ultra-Thin Ohmic Contacts for P-Type Nitride Light Emitting Devices
Packages for Semiconductor Light Emitting Devices Utilizing Dispensed Encapsulants
Laser Diode Backlighting of Lc Display with at Least One Diode Generating Light Beam Having Divergence Angle and with Display Panel Having Beam Spreader to Increase Divergence
Packages for Semiconductor Light Emitting Devices Utilizing Dispensed Reflectors and Methods of Forming the Same
Submounts for Semiconductor Light Emitting Device Packages and Semiconductor Light Emitting Device Packages Including the Same
Ultraviolet Light Emitting Diode
Patent:
43,725 →
Application:
11/432,793 →
Thermocompression Molding of Plastic Optical Elements
Packaged Light Emitting Devices Including Multiple Index Lenses and Multiple Index Lenses for Packaged Light Emitting Devices
Method of Forming Three-Dimensional Features on Light Emitting Diodes for Improved Light Extraction
Light-emitting devices having an antireflective layer that has a graded index of refraction and methods of forming the same
Leadframe-Based Packages for Solid State Emitting Devices
Methods of Forming Semiconductor Light Emitting Device Packages by Liquid Injection Molding
Modified Gold-Tin System with Increased Melting Temperature for Wafer Bonding
Alternative Doping for Group Iii Nitride Leds
Systems for Assembling Components on Submounts and Methods Therefor
Multiple Color Lighting Element Cluster Tiles for Solid State Lighting Panels
Light Emitting Diode Wth Degenerate Coupling Structure
Light Emitting Diode with Metal Coupling Structure
Leadframe-Based Packages for Solid State Light Emitting Devices
Thermal Transfer in Solid State Light Emitting Apparatus and Methods of Manufacturing
Partially Filterless Liquid Crystal Display Devices and Methods of Operating the Same
Methods of Manufacturing Light Emitting Diodes Including Barrier Layers/Sublayers
Methods of Forming Packaged Semiconductor Light Emitting Devices Having Front Contacts by Compression Molding
Packaged Semiconductor Light Emitting Devices Having Multiple Optical Elements
Etching of Substrates of Light Emitting Devices
Undoped and Unintentionally Doped Buffer Structures
Side Mountable Semiconductor Light Emitting Device Packages and Panels
Light Emitting Devices Suitable for Flip-Chip Bonding
Semiconductor Light Emitting Devices with Applied Wavelength Conversion Materials
Partially Filterless and Two-Color Subpixel Liquid Crystal Display Devices, Mobile Electronic Devices Including the Same, and Methods of Operating the Same
Packaged Light Emitting Devices
Methods of Fabricating Group Iii Nitride Based Light Emitting Diode Structures with a Quantum Well and Superlattice, Group Iii Nitride Based Quantum Well Structures and Group Iii Nitride Based Superlattice Structures
Methods of Manufacturing Semiconductor Light Emitting Devices Including Patternable Films Comprising Phosphor
Reflector Packages and Semiconductor Light Emitting Devices Including the Same
Semiconductor Devices Including Mesa Structures and Multiple Passivation Layers
Led with Current Confinement Structure and Surface Roughening
Phosphor Coating Systems and Methods for Light Emitting Structures and Packaged Light Emitting Diodes Including Phosphor Coating
Semiconductor Light Emitting Devices with High Color Rendering
Chip-Scale Methods for Packaging Light Emitting Devices and Chip-Scale Packaged Light Emitting Devices
Three Dimensional Features on Light Emitting Diodes for Improved Light Extraction
Deep Ultraviolet Light Emitting Devices and Methods of Fabricating Deep Ultraviolet Light Emitting Devices
Semiconductor Light Emitting Devices Including Flexible Silicone Film Having a Lens Therein
Apparatus and Methods for Combining Light Emitters
Led with a Current Confinement Structure Aligned with a Contact
Tile for Solid State Lighting
Submounts for Semiconductor Light Emitting Devices and Methods of Forming Packaged Light Emitting Devices Including Dispensed Encapsulants
Light Emitting Devices Having a Roughened Reflective Bond Pad and Methods of Fabricating Light Emitting Devices Having Roughened Reflective Bond Pads
Apparatus and Methods for Selecting Light Emitters
Indium Gallium Nitride-Based Ohmic Contact Layers for Gallium Nitride-Based Devices
Methods of Assembly for a Semiconductor Light Emitting Device Package
Light Emitting Devices for Light Conversion and Semiconductor Chips for Fabricating the Same
Droop-Free High Output Light Emitting Devices and Methods of Fabricating and Operating Same
Forming Light Emitting Devices Including Custom Wavelength Conversion Structures
Methods of Forming Light Emitting Devices with Active Layers That Extend into Opened Pits
Cerium and Europium Doped Single Crystal Phosphors
Led Bonding Structures and Methods of Fabricating Led Bonding Structures
Led Fabrication via Ion Implant Isolation
Solid Metal Block Semiconductor Light Emitting Device Mounting Substrates and Packages
Broadband Light Emitting Device Lamps for Providing White Light Output
Methods for Forming Semiconductor Light Emitting Devices and Submounts
Semiconductor Light Emitting Devices Including a Luminescent Conversion Element and Methods for Packaging the Same
High Efficiency Group Iii Nitride Led with Lenticular Surface
High Efficiency Group Iii Nitride Led with Lenticular Surface
Semiconductor Light Emitting Circuits Including Light Emitting Diodes and Semiconductor Shunt Devices
Methods for Combining Light Emitting Devices in a Package and Packages Including Combined Light Emitting Devices
Methods of Fabricating Light Emitting Devices by Selective Deposition of Light Conversion Materials Based on Measured Emission Characteristics
Light-Emitting Devices Having an Active Region with Electrical Contacts Coupled to Opposing Surfaces Thereof
Light Emitting Devices Having Roughened/Reflective Contacts and Methods of Fabricating Same
Front End Scribing of Light Emitting Diode (Led) Wafers and Resulting Devices
Semiconductor Light Emitting Devices Including Multiple Semiconductor Light Emitting Elements in a Substrate Cavity
Solid Metal Block Semiconductor Light Emitting Device Mounting Substrates
Lighting Structures Including Diffuser Particles Comprising Phosphor Host Materials
Led Fabrication via Ion Implant Isolation
Light Emitting Diodes Including Integrated Backside Reflector and Die Attach
Independent Control of Light Emitting Diodes
Light Emitting Diodes Including Barrier Layers/Sublayers and Manufacturing Methods Therefor
Led with Current Confinement Structure and Surface Roughening
Led with Conductively Joined Bonding Structure
Packaged Light Emitting Devices Including Multiple Index Lenses and Methods of Fabricating the Same
Solid State Light Emitting Apparatus with Thermal Management Structures and Methods of Manufacturing
Semiconductor Light Emitting Device Packages Including Submounts
Group Iii Nitride Based Quantum Well Light Emitting Device Structures with an Indium Containing Capping Structure
Group Iii Nitride Based Light Emitting Diode Structures with Multiple Quantum Well Structures Having Varying Well Thicknesses
Photonic Crystal Phosphor Light Conversion Structures for Light Emitting Devices
Warm White Leds Having High Color Rendering Index Values and Related Luminophoric Mediums
Light Emitting Devices and Systems Having Tunable Chromaticity
Solid State Light Emitting Diode Packages with Leadframes and Ceramic Material
High Output Group Iii Nitride Light Emitting Diodes
High Voltage Low Current Surface Emitting Led
Semiconductor Light Emitting Device Substrate Strips and Packaged Semiconductor Light Emitting Devices
Methods for Combining Light Emitting Devices in a Package and Packages Including Combined Light Emitting Devices
Indium Gallium Nitride-Based Ohmic Contact Layers for Gallium Nitride-Based Devices
Semiconductor Light Emitting Devices Including an Optically Transmissive Element
Semiconductor Light Emitting Devices with Optical Coatings and Methods of Making Same
Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface
Led with Self Aligned Bond Pad
Patent:
43,412 →
Application:
12/899,228 →
Three Dimensional Features on Light Emitting Diodes for Improved Light Extraction
Submounts for Semiconductor Light Emitting Devices and Methods of Forming Packaged Light Emitting Devices Including Dispensed Encapsulants
Semiconductor Light Emitting Diodes Including Multiple Bond Pads on a Single Semiconductor Die
Methods of Selectively Applying Luminous Material to Light Emitting Devices Based on Measured Output Thereof
Light-Emitting Devices Having Multiple Encapsulation Layers with at Least One of the Encapsulation Layers Including Nanoparticles and Methods of Forming the Same
Electronic Device Submounts Including Substrates with Thermally Conductive Vias
Semiconductor Light Emitting Devices with Applied Wavelength Conversion Materials and Methods for Forming the Same
Packaged Semiconductor Light Emitting Devices Having Multiple Optical Elements
Light Emitting Diodes with Low Junction Temperature and Solid State Backlight Components Including Light Emitting Diodes with Low Junction Temperature
Methods, Systems, and Apparatus for Determining Optical Properties of Elements of Lighting Components Having Similar Color Points
Multi-Chip Led Devices
High Density Multi-Chip Led Devices
Structures and Substrates for Mounting Optical Elements and Methods and Devices for Providing the Same Background
Solid State Lighting Component Package with Reflective Layer
Horizontal Light Emitting Diodes Including Phosphor Particles
Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures
Solid State Light Emitting Devices Including Nonhomogeneous Luminophoric Particle Size Layers
Side Mountable Semiconductor Light Emitting Device Packages and Panels
Lighting Apparatus Providing Increased Luminous Flux While Maintaining Color Point and Cri
Methods for Combining Light Emitting Devices in a White Light Emitting Apparatus That Mimics Incandescent Dimming Characteristics and Solid State Lighting Apparatus for General Illumination That Mimic Incandescent Dimming Characteristics
Thermal Transfer in Solid State Light Emitting Apparatus and Methods of Manufacturing
Packaged Light Emitting Devices
Methods of Fabricating Light Emitting Devices Including Multiple Sequenced Luminophoric Layers
Recipient Luminophoric Mediums Having Narrow Spectrum Luminescent Materials and Related Semiconductor Light Emitting Devices and Methods
Gap Engineering for Flip-Chip Mounted Horizontal Leds
Submounts for Semiconductor Light Emitting Devices and Methods of Forming Packaged Light Emitting Devices Including Dispensed Encapsulants
Leadframe-Based Packages for Solid State Light Emitting Devices and Methods of Forming Leadframe-Based Packages for Solid State Light Emitting Devices
Conformal Gel Layers for Light Emitting Diodes
Reflective Mounting Substrates for Flip-Chip Mounted Horizontal Leds
High Efficiency Group Iii Nitride Led with Lenticular Surface
High Voltage Low Current Surface Emitting Light Emitting Diode
Broadband Light Emitting Device Lamps for Providing White Light Output
Leadframe-Based Packages for Solid State Light Emitting Devices Having Heat Dissipating Regions in Packaging
Group Iii Nitride Based Quantum Well Light Emitting Device Structures with an Indium Containing Capping Structure
Light Emitting Devices with Low Packaging Factor
Semiconductor Light Emitting Device Substrate Strips and Packaged Semiconductor Light Emitting Devices
Ultra-Thin Ohmic Contacts for P-Type Nitride Light Emitting Devices
Packaged Light Emitting Diodes Including Phosphor Coating and Phosphor Coating Systems
Methods of Forming Optical Conversion Material Caps
Light Emitting Devices Having Roughened/Reflective Contacts and Methods of Fabricating Same
Semiconductor Light Emitting Devices Including Flexible Unitary Film on Aluminum Nitride Substrate
Methods of Determining and Making Red Nitride Compositions
Low Temperature High Strength Metal Stack for Die Attachment
Cerium and Europium Doped Phosphor Compositions and Light Emitting Devices Including the Same
Gel Underfill Layers for Light Emitting Diodes
Semiconductor Light Emitting Devices and Submounts
Group Iii Nitride Led with Undoped Cladding Layer
Patent:
45,059 →
Application:
13/439,292 →
Light Emitting Diode (Led) Contact Structures and Process for Fabricating the Same
Packaged Semiconductor Light Emitting Devices Having Multiple Optical Elements and Methods of Forming the Same
Group Iii Nitride Based Light Emitting Diode Structures with a Quantum Well and Superlattice, Group Iii Nitride Based Quantum Well Structures and Group Iii Nitride Based Superlattice Structures
Apparatus and Methods for Selecting Light Emitters
Solid State Lighting Component Package with Reflective Polymer Matrix Layer
Light Emitting Diodes Including Barrier Sublayers
Multi-Segment Led Components and Led Lighting Apparatus Including the Same
Led Based Lighting System
Multi-Segment Led Lighting Apparatus Configurations
Light Emitting Devices and Systems Having Tunable Chromaticity and Methods of Tuning the Chromaticity of Light Emitting Devices and Systems
Apparatus and Methods for Combining Light Emitters
Submount-Free Light Emitting Diode (Led) Components and Methods of Fabricating Same
Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface
Semiconductor Light Emitting Diodes with Crack-Tolerant Barrier Structures and Methods of Fabricating the Same
Solid State Lighting Apparatus and Methods of Forming
Led Assembly
Light Emitting Diodes Having Group Iii Nitride Surface Features Defined by a Mask and Crystal Planes
Solid State Lighting Component Package with Conformal Reflective Coating
Electrostatic Phosphor Coating Systems and Methods for Light Emitting Structures and Packaged Light Emitting Diodes Including Phosphor Coating
Led with Surface Roughening
Group Iii Nitride Based Quantum Well Light Emitting Device Structures with an Indium Containing Capping Structure
Light Emitting Diodes Including Current Spreading Layer and Barrier Sublayers
Silazane-Containing Materials for Light Emitting Diodes
Semiconductor Light Emitting Devices with Densely Packed Phosphor Layer at Light Emitting Surface
High Efficiency Group Iii Nitride Led with Lenticular Surface
Semiconductor Light Emitting Devices Including Red Phosphors That Exhibit Good Color Rendering Properties and Related Red Phosphors
Light Emitting Diode (Led) Components Including Contact Expansion Frame
Nanocomposite Compositions and Methods of Making
Application:
14/447,357 →
Publication:
US 2015/0054425
Semiconductor Light Emitting Devices Including Multiple Red Phosphors That Exhibit Good Color Rendering Properties with Increased Brightness
Wire Bonded Light Emitting Diode (Led) Components Including Reflective Layer
Patent:
9,214,607 →
Application:
14/478,147 →
Methods of Fabricating Light Emitting Diodes by Masking and Wet Chemical Etching
Blue Light Emitting Devices That Include Phosphor-Converted Blue Light Emitting Diodes
Patent:
9,219,201 →
Application:
14/529,327 →
Light Emitting Diode (Led) Components Including Led Dies That Are Directly Attached to Lead Frames
Methods for Combining Light Emitting Devices in a White Light Emitting Apparatus that Mimics Incandescent Dimming Characteristics and Solid State Lighting Apparatus for General Illumination that Mimic Incandescent Dimming Characteristics
Group Iii Nitride Led with Undoped Cladding Layer
Patent:
46,588 →
Application:
14/743,528 →
Group III Nitride LED with Undoped Cladding Layer and Multiple Quantum Well
Patent:
46,589 →
Application:
14/797,980 →
Light Emitting Devices Having Closely-Spaced Broad-Spectrum and Narrow-Spectrum Luminescent Materials and Related Methods
Light Emitting Diode (Led) Components Including Multiple Led Dies That Are Attached to Lead Frames
High Brightness, Low-Cri Semiconductor Light Emitting Devices Including Narrow-Spectrum Luminescent Materials
Patent:
9,905,735 →
Application:
15/475,366 →
Light Emitting Devices Having Closely-Spaced Broad-Spectrum and Narrow-Spectrum Luminescent Materials and Related Methods
Solid State Lighting Component Package with Conformal Reflective Coating
Clear Coating for Light Emitting Device Exterior Having Chemical Resistance and Related Methods
Semiconductor Light Emitting Devices Including Superstrates with Patterned Surfaces
Lamp Package
Patent:
591,697 →
Application:
29/248,311 →
Led Lighting Tile
Patent:
585,847 →
Application:
29/248,867 →
Led
Patent:
606,948 →
Application:
29/249,263 →
Lamp Packages
Patent:
594,827 →
Application:
29/250,973 →
Led Chip
Patent:
566,056 →
Application:
29/275,303 →
Led Chip
Patent:
566,057 →
Application:
29/275,362 →
Led
Patent:
595,673 →
Application:
29/276,271 →
Led Chip
Patent:
582,865 →
Application:
29/280,949 →
Led Chip
Patent:
582,866 →
Application:
29/284,431 →
Led Chip
Patent:
583,338 →
Application:
29/284,434 →
Lamp Packages
Patent:
623,607 →
Application:
29/284,854 →
Led
Patent:
608,739 →
Application:
29/306,991 →
Led Chip
Patent:
602,450 →
Application:
29/327,786 →
Led Chip
Patent:
616,839 →
Application:
29/327,793 →
Led Chip
Patent:
593,968 →
Application:
29/328,502 →
Lamp Package
Patent:
640,645 →
Application:
29/328,924 →
Led
Patent:
605,612 →
Application:
29/331,898 →
Light Emitting Diode
Patent:
621,802 →
Application:
29/334,956 →
Light Emitting Diode
Patent:
669,040 →
Application:
29/365,193 →
Light Emitting Diode
Patent:
672,731 →
Application:
29/383,906 →
Light Emitting Diode
Patent:
689,830 →
Application:
29/383,908 →
Light Emitting Diode
Patent:
682,225 →
Application:
29/383,910 →
High-Density Emitter Package
Patent:
658,139 →
Application:
29/384,360 →
Emitter Package
Patent:
660,257 →
Application:
29/384,363 →
Light Emitting Diode
Patent:
675,580 →
Application:
29/386,077 →
Light Emitting Diode
Patent:
673,125 →
Application:
29/386,078 →
Lamp Package
Patent:
681,573 →
Application:
29/392,801 →
Light Emitting Diode
Patent:
675,581 →
Application:
29/396,907 →
Lamp Packages
Patent:
691,973 →
Application:
29/396,909 →
Led Chip
Patent:
673,126 →
Application:
29/396,911 →
Lamp Packages
Patent:
689,209 →
Application:
29/402,571 →
Lamp Packages
Patent:
689,210 →
Application:
29/402,573 →
Solid State Lighting Apparatus
Patent:
708,155 →
Application:
29/418,797 →
Lamp Package
Patent:
703,348 →
Application:
29/426,661 →
Led Chip
Patent:
689,031 →
Application:
29/436,228 →
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Apr 1, 2021
From: CREE, INC.
To: CREE LED, INC.
Reel/Frame 056012/0200 →
Security Interest
Feb 7, 2022
From: SMART MODULAR TECHNOLOGIES, INC.; SMART HIGH RELIABILITY SOLUTIONS, LLC; SMART EMBEDDED COMPUTING, INC.; CREELED, INC.
To: CITIZENS BANK, N.A.
Reel/Frame 058983/0001 →
Release of Patent Security Interest Recorded at R/F 058983/0001
Jun 25, 2025
From: CITIZENS BANK, N.A.
To: SMART MODULAR TECHNOLOGIES, INC.; SMART EMBEDDED COMPUTING, INC.; SMART HIGH RELIABILITY SOLUTIONS LLC; CREELED, INC.
Reel/Frame 071725/0207 →