Semiconductor light emitting devices with densely packed phosphor layer at light emitting surface
View Patent ↗An LED includes a chip having a light emitting surface, and a coating of phosphor-containing material on the light emitting surface. The phosphor-containing material comprises at least two quantities of different phosphor particles and are arranged in a densely packed layer within the coating at the light emitting surface. The densely packed layer of phosphor particles does not extend all the way through the coating.
1. A semiconductor light emitting device, comprising:
a semiconductor light emitting element having a light emitting surface; and
a coating of phosphor-containing material on the light emitting surface, wherein the phosphor-containing material comprises at least two quantities of different phosphor particles, wherein the phosphor particles are arranged in a densely packed layer within the coating at the light emitting surface, and wherein the densely packed layer of phosphor particles does not extend all the way through the coating.
2. The semiconductor light emitting device of claim 1 , wherein the at least two quantities of different phosphor particles are mixed together.
3. The semiconductor light emitting device of claim 1 , wherein the at least two quantities of different phosphor particles are selected from the group of red phosphor particles, yellow phosphor particles, and green phosphor particles.
4. The semiconductor light emitting device of claim 1 , wherein particles in one of the at least two quantities of different phosphor particles are larger than other phosphor particles in the phosphor-containing material.
5. The semiconductor light emitting device of claim 1 , wherein an average distance that heat generated by the phosphor particles travels from the densely packed layer to the semiconductor light emitting element is substantially less than half the thickness of the coating.
6. The semiconductor light emitting device of claim 1 , wherein the light emitting surface comprises a pattern of features extending outwardly to form receptacles for receiving the phosphor particles.
7. The semiconductor light emitting device of claim 1 , further comprising an intermediate layer of material between the light emitting surface and coating of phosphor-containing material, wherein the intermediate layer of material comprises a pattern of features extending outwardly therefrom to form receptacles for receiving the phosphor particles.
8. The semiconductor light emitting device of claim 1 , wherein the light emitting surface emits light having a first dominant wavelength upon the application of a voltage to the semiconductor light emitting element, and wherein the phosphor particles convert light emitted by the light emitting surface to light having a second dominant wavelength different from the first dominant wavelength.
9. The semiconductor light emitting device of claim 1 , wherein the semiconductor light emitting element is selected from the group consisting of light emitting diodes and laser diodes.
10. The semiconductor light emitting device of claim 1 , wherein the coating of phosphor-containing material comprises silicone or silicon.
11. A lighting device, comprising:
a semiconductor light emitting element that emits light having a first dominant wavelength upon the application of a voltage thereto; and
a coating of phosphor-containing material on a light emitting surface of the element, wherein the phosphor-containing material comprises at least two quantities of different phosphor particles, wherein the phosphor particles are arranged in a densely packed layer within the material at the light emitting surface, wherein the phosphor particles convert light emitted by the light emitting surface to light having a second dominant wavelength different from the first dominant wavelength, and wherein the densely packed layer of phosphor particles does not extend all the way through the coating.
12. The lighting device of claim 11 , wherein the at least two quantities of different phosphor particles are mixed together.
13. The lighting device of claim 11 , wherein the at least two quantities of different phosphor particles are selected from the group of red phosphor particles, yellow phosphor particles, and green phosphor particles.
14. The lighting device of claim 11 , wherein particles in one of the at least two quantities of different phosphor particles are larger than other phosphor particles in the phosphor-containing material.
15. The lighting device of claim 11 , wherein the light emitting surface comprises a pattern of features extending outward from the light emitting surface that form receptacles for receiving the phosphor particles.
16. The lighting device of claim 11 , further comprising an intermediate layer of material between the light emitting surface and coating of phosphor-containing material, wherein the intermediate layer of material comprises a pattern of features extending outward therefrom that form receptacles for receiving the phosphor particles.
17. A semiconductor light emitting device, comprising:
a semiconductor light emitting element having a light emitting surface;
an element in adjacent, spaced-apart relationship with the light emitting surface; and
a coating of phosphor-containing material on the element, wherein the phosphor-containing material comprises at least two quantities of different phosphor particles, and wherein the phosphor particles are arranged in a densely packed layer within the coating.
18. The semiconductor light emitting device of claim 17 , wherein the at least two quantities of different phosphor particles are mixed together.
19. The semiconductor light emitting device of claim 17 , wherein the at least two quantities of different phosphor particles are selected from the group of red phosphor particles, yellow phosphor particles, and green phosphor particles.
20. The semiconductor light emitting device of claim 17 , wherein the element comprises a lens or a reflective element.