Group III nitride based quantum well light emitting device structures with an indium containing capping structure
View Patent ↗Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
1. A light emitting diode, comprising:
an n-type Group III nitride layer;
a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising at least one quantum well structure; and
an undoped Group III nitride capping layer comprising indium on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the capping layer is distinct from the light emitting diode active region, and wherein the capping layer is directly on a binary Group III nitride layer.
2. The light emitting diode of claim 1 , wherein the capping layer comprising indium comprises a quaternary layer.
3. The light emitting diode of claim 1 , wherein the binary Group III nitride layer comprises a barrier layer of the active region.
4. The light emitting diode of claim 1 , wherein the binary Group III nitride layer is between the active region and the undoped capping layer.
5. The light emitting diode of claim 1 , wherein the undoped Group III nitride capping layer further comprises aluminum.
6. The light emitting diode of claim 1 , further comprising:
a p-type Group III nitride layer directly on the undoped Group III nitride capping layer and remote from the active region.
7. The light emitting diode of claim 1 , wherein the undoped Group III nitride capping layer provides a transition from a lattice structure of the light emitting diode active region to a lattice structure of a p-type layer thereon.
8. The light emitting diode of claim 1 , wherein the undoped Group III nitride capping layer does not provide photon emission due to carrier recombination therein.
9. A light emitting diode, comprising:
an n-type Group III nitride layer;
a Group III nitride light emitting diode active region on the n-type Group III nitride layer, the light emitting diode active region comprising at least one quantum well structure; and
an undoped Group III nitride capping layer comprising indium on the light emitting diode active region opposite from the n-type Group III nitride layer, wherein the capping layer is distinct from the light emitting diode active region, and wherein the capping layer is directly on a quaternary barrier layer of the active region.