Methods of forming light-emitting devices having an antireflective layer that has a graded index of refraction
View Patent ↗A light-emitting device includes a substrate that is at least partially transparent to optical radiation and has a first index of refraction. A diode region is disposed on a first surface of the substrate and is configured to emit light responsive to a voltage applied thereto. An encapsulation layer is disposed on a second surface of the substrate and has a second index of refraction. An antireflective layer is disposed between a second surface of the substrate and the encapsulation layer. The antireflective layer has a graded index of refraction having values in a range between about the first index of refraction at a first surface of the antireflective layer and about the second index of refraction at a second surface of the antireflective layer. The encapsulation layer may also be omitted and the antireflective layer may separate the substrate, which has a first index of refraction, from air, which has a second index of refraction. Non “flip-chip” embodiments are also disclosed.
1. A method of forming a light-emitting device, comprising:
providing a substrate that is at least partially transparent to optical radiation and has a first surface, a second surface, and a first index of refraction;
forming a diode region on the first surface of the substrate that emits light responsive to a voltage applied thereto; and
forming an antireflective layer on the second surface of the substrate that has a graded index of refraction having values in a range between about the first index of refraction at a first surface of the antireflective layer and about a second index of refraction corresponding to an index of refraction of an encapsulation material at a second surface of the antireflective layer;
wherein the substrate comprises SiC and the antireflective layer comprises (SiC) x (SiO 2 ) 1-x or the substrate comprises Al 2 O 3 and the antireflective layer comprises (Al 2 O 3 ) x (SiO 2 ) l-x .
2. The method of claim 1 , wherein forming the antireflective layer comprises:
depositing the antireflective layer on tile substrate using a deposition process selected from the group of processes consisting of chemical vapor deposition (CVD) and plasma enhanced chemical vapor deposition (PECVD).
3. The method of claim 1 , wherein forming the antireflective layer comprises:
forming the antireflective layer on the substrate using a process selected from the group of processes consisting of thermal evaporation, e-beam evaporation, sputtering, spin-coating, sol-gel spin coating, and plating.
4. The method of claim 1 , wherein the first surface of the antireflective layer is proximal to the second surface of the substrate.
5. The method of claim 1 , wherein forming the antireflective layer comprises:
applying (SiC) x (SiO 2 ) 1-x to the SiC substrate by decreasing a value of x during an application time interval.
6. The method of claim 5 , wherein x is about 1.0 at a beginning of the application time interval and x is about 0 at an end of the application time interval.
7. The method of claim 1 , wherein forming the antireflective layer comprises:
applying (Al 2 O 3 ) x (SiO 2 ) 1-x to the Al 2 O 3 substrate by decreasing a value of x during an application time interval.
8. The method of claim 7 , wherein x is about 1.0 at a beginning of the application time interval and x is about 0 at an end of the application time interval.
9. The method of claim 1 , wherein the antireflective layer comprises a polymer.
10. The method of claim 1 , wherein the substrate comprises SiC, the first index of refraction is about 2.6, and the second index of refraction is about 1.5.
11. The method of claim 1 , wherein the substrate comprises Al 2 O 3 , the first index of refraction is about 1.8, and the second index of refraction is about 1.5.
12. The method of claim 1 , wherein the graded index of refraction is represented as a function f(x), where x represents a thickness of the antireflective layer beginning at the first surface of the antireflective layer and ending at the second surface of the antireflective layer.
13. The method of claim 12 , wherein f(x) is linear.
14. The method of claim 1 , further comprising:
forming the encapsulation material on the second surface of the antireflective layer.