Light-emitting devices having an active region with electrical contacts coupled to opposing surfaces thereof
View Patent ↗A light-emitting device comprises a substrate that has a contact plug extending therethrough between first and second opposing surfaces. An active region is on the first surface, a first electrical contact is on the active region, and a second electrical contact is adjacent to the second surface of the substrate. The contact plug couples the second electrical contact to the active region. Such a configuration may allow electrical contacts to be on opposing sides of a chip, which may increase the number of devices that may be formed on a wafer.
1. A light-emitting device, comprising:
an active region;
a first electrical contact on a first surface of the active region;
a contact plug on a second surface of the active region;
a second electrical contact on the contact plug, the contact plug coupling the second electrical contact to the active region;
wherein the contact plug and the second electrical contact comprise different materials.
2. The light-emitting device of claim 1 , further comprising:
an ohmic contact layer between the contact plug and the second surface of the active region.
3. The light-emitting device of claim 2 , wherein the ohmic contact layer comprises at least one of TiN, platinum, nickel/gold, nickel oxide/gold, nickel oxide/platinum, Ti, and titanium/gold.
4. The light-emitting device of claim 2 , wherein the ohmic contact layer has a thickness between about 10 Å and about 100 Å.
5. The light-emitting device of claim 1 , wherein the ohmic contact layer is at least partially transparent.
6. The light-emitting device of claim 1 , further comprising:
a substrate on the second surface of the active region;
wherein the contact plug extends through the substrate.
7. The light emitting device of claim 1 , where the substrate comprises sapphire.
8. The light-emitting device of claim 1 , wherein the contact plug comprises gold, silver, a gold alloys, and/or a silver alloy.
9. The light-emitting device of claim 1 , wherein the first and second electrical contacts are substantially aligned with respect to each other.
10. The light-emitting device of claim 1 , wherein the first and second electrical contacts are offset with respect to each other with respect to a axis perpendicular to the first and second surfaces of the active region.
11. The light-emitting device of claim 1 , wherein the active region comprises:
an n-type layer adjacent to the contact plug; and
a p-type layer adjacent to the first electrical contact.
12. The light-emitting device of claim 11 , wherein the n-type layer comprises GaN.
13. The light emitting device of claim 11 , wherein the p-type layer comprises GaN.
14. The light-emitting device of claim 1 , wherein the first electrical contact comprises at least one of platinum, nickel, and titanium/gold.
15. The light-emitting device of claim 1 , wherein the second electrical contact comprises at least one of aluminum and titanium.