High efficiency group III nitride-silicon carbide light emitting diode
View Patent ↗A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
1. A wafer structure for high-efficiency inverted chip light emitting diode precursors, said wafer structure comprising:
a conductive silicon carbide substrate wafer;
at least one light-emitting active layer on said substrate;
at least one metal contact layer on said light emitting layer;
a conductive silicon carbide sub-mounting wafer structure on said at least one metal contact layer;
a plurality of ohmic contacts on the surface of said conductive silicon carbide substrate wafer that is opposite from said light emitting active layer, said ohmic contacts defining a plurality of light emitting diode precursors.
2. A wafer structure according to claim 1 wherein said conductive silicon carbide substrate wafer is a single crystal and has a polytype selected from the group consisting of the 3C, 4H, 6H and 15R polytypes of silicon carbide.
3. A wafer structure according to claim 1 wherein said light-emitting active layer is a Group III nitride.
4. A wafer structure according to claim 1 wherein said light-emitting active layer is indium gallium nitride.
5. A wafer structure according to claim 1 comprising a plurality of metal contact layers.
6. A wafer structure according to claim 1 wherein said plurality of metal contact layers comprises:
a solder layer for joining said conductive silicon carbide substrate wafer to said conductive sub-mounting structure;
a silver layer for providing a mirror that enhances light extraction; and
a baffler layer on and surrounding said silver layer for preventing silver from said silver layer from migrating beyond said silver layer.
7. A wafer structure according to claim 6 wherein said baffler layer is selected from the group consisting of platinum, tungsten and titanium and layers and alloys thereof.
8. A wafer structure according to claim 5 wherein at least one metal contact layer is a mirror.
9. A wafer structure according to claim 5 comprising at least one conducting etch-stop layer.
10. A wafer structure according to claim 1 wherein said conductive sub-mounting structure is selected from the group consisting of metals and semiconductors.
11. A wafer structure according to claim 1 wherein said conductive sub-mounting structure comprises a composite of at least two different materials.
12. A wafer structure according to claim 1 comprising an ohmic contact on said conductive sub-mounting structure opposite from said metal contact layer.
13. A wafer structure according to claim 12 having a total dimension between and including said ohmic contacts of no more than 100 microns.
14. A wafer structure according to claim 1 wherein said conductive silicon carbide substrate wafer is no more than 25 microns thick between said ohmic contacts to said wafer and said active layer on said wafer.
15. A wafer structure according to claim 1 wherein said conductive silicon carbide wafer has a lenticular surface for increasing the light extraction from diodes separated from said wafer structure.
16. A wafer structure for high-efficiency inverted chip light emitting diode precursors, said wafer structure comprising:
a conductive silicon carbide substrate wafer;
at least one light-emitting active layer on said substrate;
at least one metal contact layer on said light emitting layer;
a conductive sub-mounting structure on said at least one metal contact layer;
a plurality of ohmic contacts on the surface of said conductive silicon carbide substrate wafer that is opposite from said light emitting active layer, said ohmic contacts defining a plurality of light emitting diode precursors; and
an ohmic contact on said conductive sub-mounting structure opposite from said metal contact layer.
17. A wafer structure according to claim 16 wherein said conductive silicon carbide substrate wafer is a single crystal and has a polytype selected from the group consisting of the 3C, 4H, 6H and 15R polytypes of silicon carbide.
18. A wafer structure according to claim 16 wherein said light-emitting active layer is a Group III nitride.
19. A wafer structure according to claim 16 wherein said light-emitting active layer is indium gallium nitride.
20. A wafer structure according to claim 16 comprising a plurality of metal contact layers.
21. A wafer structure according to claim 16 wherein said plurality of metal contact layers comprises:
a solder layer for joining said conductive silicon carbide substrate wafer to said conductive sub-mounting structure;
a silver layer for providing a mirror that enhances light extraction; and
a baffler layer on and surrounding said silver layer for preventing silver from said silver layer from migrating beyond said silver layer.
22. A wafer structure according to claim 21 wherein said barrier layer is selected from the group consisting of platinum, tungsten and titanium and layers and alloys thereof.
23. A wafer structure according to claim 20 wherein at least one metal contact layer is a mirror.
24. A wafer structure according to claim 20 comprising at least one conducting etch-stop layer.
25. A wafer structure according to claim 16 wherein said conductive sub-mounting structure is selected from the group consisting of metals and semiconductors.
26. A wafer structure according to claim 16 wherein said conductive sub-mounting structure comprises a silicon carbide wafer.
27. A wafer structure according to claim 16 wherein said conductive sub-mounting structure comprises a composite of at least two different materials.
28. A wafer structure according to claim 16 comprising an ohmic contact on said conductive sub-mounting structure opposite from said metal contact layer.
29. A wafer structure according to claim 28 having a total dimension between and including said ohmic contacts of no more than 100 microns.
30. A wafer structure according to claim 16 wherein said conductive silicon carbide substrate wafer is no more than 25 microns thick between said ohmic contacts to said wafer and said active layer on said wafer.
31. A wafer structure according to claim 16 wherein said conductive silicon carbide wafer has a lenticular surface for increasing the light extraction from diodes separated from said wafer structure.