Semiconductor light emitting circuits including light emitting diodes and four layer semiconductor shunt devices
View Patent ↗Semiconductor light emitting circuits include semiconductor light emitting diodes that are serially connected between a pair of input terminals. Four layer semiconductor devices, such as Shockley diodes and/or thyristors are also provided, a respective one of which is connected across a respective one of the semiconductor light emitting diodes. The four layer semiconductor devices can allow a string of light emitting diodes to continue to be lit if one light emitting diode fails.
1. A semiconductor light emitting circuit comprising:
a plurality of semiconductor light emitting diodes that are serially connected between a pair of input terminals; and
a plurality of Shockley diodes, a respective one of which is connected across a respective one of the plurality of semiconductor light emitting diodes.
2. A circuit according to claim 1 wherein the plurality of Shockley diodes are connected across a respective one of the plurality of semiconductor light emitting diodes in parallel, such that an anode of a respective semiconductor light emitting diode is connected to an anode of a respective Shockley diode.
3. A circuit according to claim 1 wherein the plurality of semiconductor light emitting diodes have a diode forward voltage and wherein the plurality of Shockley diodes have a peak forward voltage that is approximately equal to the diode forward voltage.
4. A circuit according to claim 1 wherein the plurality of semiconductor light emitting diodes and the plurality of Shockley diodes comprise a same semiconductor material.
5. A circuit according to claim 1 wherein a respective semiconductor light emitting diode and a respective Shockley diode are integrated on a common semiconductor substrate.
6. A circuit according to claim 1 further comprising a constant current source that is connected to the pair of input terminals.
7. A circuit according to claim 1 further comprising:
a power source that is connected to the pair of input terminals and is responsive to a change in a voltage across the input terminals to increase a current provided through the semiconductor light emitting diodes.
8. A semiconductor light emitting circuit comprising:
a semiconductor light emitting diode; and
a Shockley diode that is connected across the semiconductor light emitting diode.
9. A circuit according to claim 8 wherein the Shockley diode is connected across the semiconductor light emitting diode in parallel, such that an anode of the semiconductor light emitting diode is connected to an anode of the Shockley diode.
10. A circuit according to claim 8 wherein the semiconductor light emitting diode has a diode forward voltage and wherein the Shockley diode has a peak forward voltage that is approximately equal to the diode forward voltage.
11. A circuit according to claim 8 wherein the semiconductor light emitting diode and the Shockley diode comprise a same semiconductor material.
12. A circuit according to claim 8 wherein the semiconductor light emitting diode and the Shockley diode are integrated on a common semiconductor substrate.
13. A circuit according to claim 8 further comprising a constant current source that is connected across the semiconductor light emitting diode.
14. A circuit according to claim 8 further comprising:
a power source that is connected across the semiconductor light emitting diode and is responsive to a change in a voltage across the semiconductor light emitting diode to increase a current provided through the semiconductor light emitting diodes.
15. A semiconductor light emitting circuit comprising:
a plurality of semiconductor light emitting diodes that are serially connected between a pair of input terminals; and
a plurality of gate-controlled thyristors, a respective one of which is directly connected across a respective one of the plurality of semiconductor light emitting diodes,
wherein the plurality of gate-controlled thyristors are directly connected across the plurality of semiconductor light emitting diodes in parallel, such that an anode of a respective semiconductor light emitting diode is directly connected to an anode of a respective gate-controlled thyristor and a cathode and a gate of a respective gate-controlled thyristor are directly connected to a cathode of a respective semiconductor light emitting diode.
16. A circuit according to claim 15 wherein the plurality of semiconductor light emitting diodes have a diode forward voltage and wherein the plurality of gate-controlled thyristors have a peak forward voltage that is approximately equal to the diode forward voltage.
17. A circuit according to claim 15 wherein the plurality of semiconductor light emitting diodes and the plurality of gate-controlled thyristors comprise a same semiconductor material.
18. A circuit according to claim 15 wherein a respective semiconductor light emitting diode and a respective gate-controlled thyristor are integrated on a common semiconductor substrate.
19. A circuit according to claim 15 further comprising a constant current source that is connected to the pair of input terminals.
20. A circuit according to claim 15 further comprising:
a power source that is connected to the pair of input terminals and is responsive to a change in a voltage across the input terminals to increase a current provided through the semiconductor light emitting diodes.
21. A semiconductor light emitting circuit comprising:
a semiconductor light emitting diode; and
a gate-controlled thyristor that is directly connected across the semiconductor light emitting diode,
wherein the gate-controlled thyristor is directly connected across the semiconductor light emitting diode in parallel, such that an anode of the semiconductor light emitting diode is directly connected to an anode of the gate-controlled thyristor and a cathode and a gate of the gate-controlled thyristor are directly connected to a cathode of the semiconductor light emitting device.
22. A circuit according to claim 21 wherein the semiconductor light emitting diode has a diode forward voltage and wherein the gate-controlled thyristor has a peak forward voltage that is approximately equal to the diode forward voltage.
23. A circuit according to claim 21 wherein the semiconductor light emitting diode and the gate-controlled thyristor comprise a same semiconductor material.
24. A circuit according to claim 21 wherein the semiconductor light emitting diode and the gate-controlled thyristor are integrated on a common semiconductor substrate.
25. A circuit according to claim 21 further comprising a constant current source that is connected across the semiconductor light emitting diode.
26. A circuit according to claim 21 further comprising:
a power source that is connected across the semiconductor light emitting diode and is responsive to a change in a voltage across the semiconductor light emitting diode to increase a current provided through the semiconductor light emitting diodes.