Semiconductor light emitting devices with applied wavelength conversion materials
View Patent ↗A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
1. A semiconductor device, comprising:
an active region configured to emit light upon the application of a voltage thereto;
a window layer configured to receive the light emitted by the active region; and
a plurality of discrete phosphor-containing regions on the window layer the plurality of discrete phosphor-containing regions containing phosphor particles of a first type of phosphor particle configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region
wherein the phosphor-containing regions comprise recesses that extend into and/or through the window layer; and wherein a first plurality of the recesses have a first diameter smaller than or about equal to an average diameter of the first type of phosphor particle in the discrete phosphor-containing regions so that the first plurality of recesses are configured to trap the first type of phosphor particle.
2. The semiconductor device of claim 1 , wherein a second plurality of the recesses have a second diameter larger than the first diameter.
3. The semiconductor device of claim 2 , wherein the discrete phosphor-containing regions further contain phosphor particles of a second type of phosphor particle, and wherein the second diameter is smaller than or about equal to an average diameter of the second type of phosphor particle in the discrete phosphor-containing regions so that the second plurality of recesses are configured to trap the second type of phosphor particle.
4. A semiconductor device, comprising:
an active region configured to emit light upon the application of a voltage thereto;
a window layer configured to receive the light emitted by the active region; and
a plurality phosphor-containing regions on the window layer and containing a plurality of phosphor particles of a first type of phosphor particle configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region;
wherein the plurality of discrete phosphor containing regions are spaced apart from the active region by the window layer;
wherein the window layer comprises a plurality of recesses that extend into and/or through the window layer, and wherein the discrete phosphor containing regions are in the plurality of recesses; and
wherein a first plurality of the recesses have a first diameter smaller than or about equal to an average diameter of the first type of phosphor particle in the discrete phosphor-containing regions so that the first plurality of recesses are configured to trap the first type of phosphor particle.
5. The semiconductor device of claim 4 , wherein a second plurality of the recesses have a second diameter larger than the first diameter.
6. The semiconductor device of claim 5 , wherein the discrete phosphor-containing regions further contain phosphor particles of a second type of phosphor particle, and wherein the second diameter is smaller than or about equal to an average diameter of the second type of phosphor particle in the discrete phosphor-containing regions so that the second plurality of recesses are configured to trap the second type of phosphor particle.