Packaged light emitting diodes including phosphor coating and phosphor coating systems

1. A light emitting structure, comprising:

a semiconductor light emitting diode (LED) comprising a p-n junction active layer;

a first layer comprising binder material having a thickness less than about 1000 μm directly on the LED;

a second layer comprising phosphor particles and having a thickness less than about 1000 μm, the second layer directly on the first layer so that the first layer is between the LED and the second layer; and

a third layer on the second layer, the third layer comprising diffuser particles.

2. The light emitting structure of claim 1 , wherein the first layer comprises a binder layer sprayed directly on the LED and the second layer comprises a phosphor layer sprayed directly on the binder layer.

3. The light emitting structure of claim 1 , wherein the first layer is thicker than the second layer.

4. The light emitting structure of claim 1 , wherein the first layer has a thickness that is about 100 times a thickness of the second layer.

5. The light emitting structure of claim 1 , wherein the first layer and the second layer have about a same thickness.

6. The light emitting structure of claim 1 , further comprising:

a fourth layer comprising phosphor particles having a thickness less than about 1000 μm directly on the first layer of binder material.

7. The light emitting structure of claim 1 , wherein the semiconductor light emitting diode comprises an LED wafer.

8. The light emitting structure of claim 1 , wherein the semiconductor light emitting diode comprises an LED chip.

9. The light emitting structure of claim 1 , wherein the phosphor particles comprises first phosphor particles configured to emit light at a first dominant wavelength, the structure further comprising:

a fourth layer on the second layer and having a thickness less than about 1000 μm, the fourth layer comprising second phosphor particles configured to emit light at a second dominant wavelength.

10. The light emitting structure of claim 9 , wherein the first dominant wavelength is the same as the second dominant wavelength.

11. The light emitting structure of claim 9 , wherein the first dominant wavelength is different from the second dominant wavelength.

12. The light emitting structure of claim 1 , wherein the phosphor particles comprises first phosphor particles configured to emit light at a first dominant wavelength, the structure further comprising:

a fourth layer on the second layer and having a thickness less than about 1000 μm, the fourth layer comprising second phosphor particles configured to emit light at a second dominant wavelength.

13. The light emitting structure of claim 1 , wherein the first layer is directly on an upper surface of the LED that is opposite a surface of a substrate beneath the LED.

14. The light emitting structure of claim 1 , wherein the first layer is directly on an upper surface of the LED that is opposite a surface of a substrate beneath the LED.

15. The light emitting structure of claim 1 , wherein the binder material comprises silicone and/or epoxy.

16. A light emitting structure, comprising:

a semiconductor light emitting diode (LED) comprising a p-n junction active layer;

a first layer comprising binder material and having a thickness less than about 1000 μm, wherein the first layer is directly on the LED;

a second layer comprising phosphor particles, the second layer having a thickness less than about 1000 μm and being directly on the first layer so that the first layer is between the LED and the second layer;

a third layer of binder material directly on the second layer; and

a fourth layer including light diffuser particles on the third layer.