Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
View Patent ↗Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed.
1. A light emitting device comprising:
a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer;
an undoped indium gallium nitride-based layer directly on the gallium nitride-based outer layer; and
a reflective metal layer directly on the undoped indium gallium nitride-based layer opposite the gallium nitride-based outer layer.
2. A light emitting device according to claim 1 wherein the gallium nitride-based outer layer is doped P-type.
3. A light emitting device according to claim 1 wherein the reflective metal layer comprises silver, nickel-silver alloy and/or aluminum.
4. A light emitting device according to claim 1 wherein the undoped indium gallium nitride-based layer is between about 5 Å and about 100 Å thick.
5. A light emitting device according to claim 1 wherein the gallium nitride-based outer layer includes a nonplanar outer surface and wherein the undoped indium gallium nitride-based layer is also nonplanar.
6. A light emitting device according to claim 1 further comprising a barrier layer on the reflective metal layer opposite the undoped indium gallium nitride-based layer and a bonding layer on the barrier layer opposite the reflective metal layer.
7. A light emitting device according to claim 1 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the outer layer.
8. A light emitting device comprising:
a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer;
an undoped indium gallium nitride-based layer directly on the gallium nitride-based outer layer;
a transparent conductive spacer layer directly on the undoped indium gallium nitride-based layer opposite the gallium nitride-based outer layer; and
a reflective metal layer directly on the transparent conductive spacer layer opposite the undoped indium gallium nitride-based layer.
9. A light emitting device according to claim 8 wherein the gallium nitride-based layer is doped P-type.
10. A light emitting device according to claim 8 wherein the reflective metal layer comprises silver, nickel-silver alloy and/or aluminum.
11. A light emitting device according to claim 8 wherein the transparent conductive spacer layer comprises a transparent conductive oxide layer.
12. A light emitting device according to claim 8 wherein the undoped indium gallium nitride-based layer is between about 5 Å and about 100 Å thick.
13. A light emitting device according to claim 8 wherein the gallium nitride-based outer layer includes a nonplanar outer surface and wherein the undoped indium gallium nitride-based layer is also nonplanar.
14. A light emitting device according to claim 8 further comprising a barrier layer on the reflective metal layer opposite the undoped indium gallium nitride-based layer and a bonding layer on the barrier layer opposite the reflective metal layer.
15. A light emitting device of claim 8 wherein the transparent conductive spacer layer is sufficiently thick to space the active light emitting region away from the reflective metal layer so as to increase reflection of light from the reflective metal layer.
16. A light emitting device according to claim 8 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the outer layer.
17. A light emitting device comprising:
a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer;
a binary indium nitride layer directly on the gallium nitride-based outer layer; and
a reflective metal layer or a transparent conductive oxide layer directly on the binary indium nitride layer opposite the gallium nitride-based outer layer.
18. A light emitting device according to claim 17 wherein the reflective metal layer comprises silver, nickel-silver alloy and/or aluminum.
19. A light emitting device according to claim 17 wherein the transparent conductive oxide layer comprises indium tin oxide.
20. A light emitting device according to claim 17 further comprising a barrier layer on the reflective metal layer opposite the binary indium nitride layer and a bonding layer on the barrier layer opposite the reflective metal layer.
21. A light emitting device according to claim 17 further comprising a bond pad on the transparent conductive oxide layer opposite the binary indium nitride layer.
22. A light emitting device according to claim 17 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the outer layer.
23. A light emitting device comprising:
a gallium nitride-based epitaxial structure that includes an active light emitting region;
an indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride, on the gallium nitride-based epitaxial structure; and
a reflective metal layer or a transparent conductive oxide layer on the indium gallium nitride-based layer opposite the gallium nitride-based epitaxial structure.
24. A light emitting device according to claim 23 wherein the indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride is directly on the gallium nitride-based epitaxial structure and wherein the reflective metal layer or the transparent conductive oxide layer is directly on the indium gallium nitride-based layer opposite the gallium nitride-based epitaxial structure.
25. A light emitting device according to claim 23 wherein indium gallium nitride-based layer including therein clusters of elemental indium and/or binary indium nitride is a ternary indium gallium nitride layer including therein clusters of elemental indium and/or binary indium nitride.
26. A light emitting device according to claim 23 wherein the reflective metal layer comprises silver, nickel-silver alloy and/or aluminum.
27. A light emitting device according to claim 23 wherein the transparent conductive oxide layer comprises indium tin oxide.
28. A light emitting device according to claim 23 further comprising a barrier layer on the reflective metal layer opposite the indium nitride-based layer and a bonding layer on the barrier layer opposite the reflective metal layer.
29. A light emitting device according to claim 23 further comprising a bond pad on the transparent conductive oxide layer opposite the indium gallium nitride-based layer.
30. A light emitting device according to claim 23 further comprising a substrate on the gallium nitride-based epitaxial structure opposite the indium gallium nitride-based layer.
31. A method of fabricating a light emitting device comprising:
epitaxially forming a gallium nitride-based structure that includes an active light emitting region and a gallium nitride-based outer layer;
epitaxially forming an undoped indium gallium nitride layer directly on the gallium nitride-based outer layer; and
forming a reflective metal layer or a transparent conductive layer directly on the undoped indium gallium nitride layer.
32. A method according to claim 31 wherein epitaxially forming a gallium nitride-based outer layer comprises exposing the gallium nitride-based structure to sources of gallium, nitrogen and a P-type dopant and wherein epitaxially forming an undoped indium gallium nitride layer comprises further exposing the gallium nitride-based structure to the sources of gallium and nitrogen, and to a source of indium, while terminating exposure to the P-type dopant.