Semiconductor light emitting devices and submounts
View Patent ↗A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
1. A light emitting device package for a semiconductor light emitting device, comprising:
a semiconductor substrate having a mounting surface thereon configured to receive the light emitting device;
a light emitting device on the mounting surface;
a first conductive path extending through the substrate from the mounting surface to an external surface of the semiconductor substrate;
a second conductive path extending through the substrate from the mounting surface to the external surface of the substrate;
a plurality of p-n junctions formed in the semiconductor substrate, wherein ones of the plurality of p-n junctions formed in the semiconductor substrate couple the first conductive path to the second conductive path; and
a solid wavelength conversion member positioned over the light emitting device and displaced therefrom to receive and wavelength convert light emitted from the light emitting device.
2. The light emitting device package of claim 1 , further comprising:
a first bond pad on the mounting surface positioned to couple a first node of the light emitting device to the first conductive path; and
a second bond pad on the mounting surface positioned to couple a second node of the light emitting device to the second conductive path,
wherein the plurality of p-n junctions formed in the semiconductor substrate are configured to provide electro-static discharge (ESD) protection to the light emitting device.
3. The light emitting device package of claim 1 , wherein the ones of the plurality of p-n junctions coupling the first and second conductive paths comprise integral opposing zener diode junctions to provide electro-static discharge (ESD) protection to the light emitting device.
4. The light emitting device package of claim 3 , wherein the semiconductor substrate includes a first conductivity type doped region of semiconductor material and wherein the integral opposing zener diode junctions comprise a first opposite conductivity type doped region of semiconductor material in the first conductivity type doped region as a doped region of the first conductive path and a second opposite conductivity type doped region of semiconductor material in the first conductivity type doped region as a doped region of the second conductive path.
5. The light emitting device package of claim 1 , wherein the light emitting device includes no wire bonds.
6. The light emitting device package of claim 1 , wherein the wavelength conversion member comprises a lens having a predetermined optical transmission pattern and wherein the light emitting device has an optical emission pattern associated with a chip shape of the light emitting device and the solid wavelength conversion member provides the light emitting device package a selected optical pattern based on the optical transmission pattern and the optical emission pattern.
7. The light emitting device package of claim 6 , wherein the optical pattern comprises a far-field optical pattern.
8. The light emitting device package of claim 6 , wherein the optical pattern comprises a near-field optical pattern.
9. The light emitting device package of claim 1 , wherein the wavelength conversion member is flat and/or convex on a surface thereof opposite the light emitting device.
10. The light emitting device package of claim 9 , wherein the wavelength conversion member is convex on a surface thereof opposite the light emitting device.
11. The light emitting device package of claim 1 , wherein each of the first and second conductive paths comprise a conductive via in contact with a doped region.
12. The light emitting device package of claim 11 , wherein each of the respective conductive vias contact the respective doped region at a respective contact region, and wherein the ones of the plurality of p-n junctions formed in the semiconductor substrate couple the first conductive path to the second conductive path at the contact regions.
13. A light emitting device package for a semiconductor light emitting device, comprising:
a semiconductor substrate including a mounting surface thereon configured to receive the light emitting device, said semiconductor substrate further including a plurality of p-n junctions formed in the semiconductor substrate below a top surface of the substrate; and
a light emitting device mounted to said mounting surface without wirebonds using a first bond pad, on the mounting surface and positioned to directly couple a first node of the light emitting device to said plurality of p-n junctions, and a second bond pad, on said mounting surface and positioned to directly couple a second node of the light emitting device to said plurality of p-n junctions, wherein said plurality of p-n junctions comprises integral opposing zener diode junctions aligned in a direction parallel to the top surface of the substrate to provide electro-static discharge (ESD) protection to the light emitting device.
14. The light emitting device package of claim 13 , further comprising a solid wavelength conversion member positioned on a top surface of the semiconductor substrate over the light emitting device and displaced therefrom to receive and wavelength convert light emitted from the light emitting device.