Semiconductor light emitting devices with high color rendering

1. A packaged light emitting device (LED), comprising:

a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength wherein the shoulder emission component comprises a spike of optical energy at a longer wavelength than the peak wavelength; and

a wavelength conversion material configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.55, wherein (ccx, ccy) represents the coordinates of the color point on a 1931 CIE color diagram.

2. The packaged LED of claim 1 , wherein the wavelength conversion material is a YAG:Ce.

3. The packaged LED of claim 1 , wherein the wavelength conversion material is configured to emit light having a saturated color point with a ccx between about 0.458 and 0.463 and a ccy between about 0.524 and 0.528 in response to the primary light.

4. The packaged LED of claim 1 , wherein the wavelength conversion material has a particle size distribution such that a D50 particle size of the wavelength conversion material is about 11 μm or greater.

5. The packaged LED of claim 1 , wherein the wavelength conversion material comprises a first wavelength conversion material, the device further comprising a second wavelength conversion material configured to receive light emitted by the light emitting diode and to responsively emit light having a dominant wavelength greater than 600 nm.

6. The packaged LED of claim 5 , wherein the second wavelength conversion material particle size distribution such that a D50 particle size of the wavelength conversion material is about 10 μm or greater.

7. The packaged LED of claim 5 , wherein a percentage of a total amount of the first and second wavelength conversion materials by weight represented by the second wavelength conversion material can be about 5% to about 40%.

8. The packaged LED of claim 1 , further comprising a light-scattering lens arranged over the wavelength conversion material and configured to refract light emitted by the LED and the wavelength conversion material, wherein the light scattering lens is configured to scatter the emitted light randomly.

9. The packaged LED of claim 8 , wherein the light-scattering lens comprises a transparent lens body including light scattering particles in the lens body.

10. The packaged LED of claim 8 , wherein the light-scattering lens comprises a roughened outer surface.

11. The packaged LED of claim 1 , wherein the LED has a peak wavelength that is less than about 460 nm.

12. The packaged LED of claim 11 , wherein the LED has a peak wavelength of about 450 nm.

13. The packaged LED of claim 11 , wherein the LED has a dominant wavelength below 480 nm.

14. The packaged LED of claim 11 , wherein the LED has a shoulder emission component between 465 and 480 nm.

15. The packaged LED of claim 11 , wherein the LED has a shoulder emission component at about 470 nm.

16. A packaged light emitting device (LED), comprising:

a light emitting diode configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength wherein the shoulder emission component comprises a spike of optical energy at a longer wavelength than the peak wavelength; and

a wavelength conversion material configured to receive light emitted by the light emitting diode and to responsively emit light having a saturated color point with a ccx between about 0.458 and 0.463 and a ccy between about 0.524 and 0.528, wherein (ccx, ccy) represents the coordinates of the color point on a 1931 CIE color diagram.

17. A method of forming a packaged light emitting device (LED), comprising

mounting a light emitting diode on a submount, the light emitting diode being configured to emit primary light having a peak wavelength that is less than about 465 nm and having a shoulder emission component at a wavelength that is greater than the peak wavelength wherein the shoulder emission component comprises a spike of optical energy at a longer wavelength than the peak wavelength; and

positioning a wavelength conversion material adjacent the light emitting diode, wherein the wavelength conversion material is configured to receive the primary light emitted by the light emitting diode and to responsively emit light having a color point with a ccx greater than about 0.4 and a ccy less than about 0.6, wherein (ccx, ccy) represents the coordinates of the color point on a 1931 CIE color diagram.

18. The method of claim 17 , wherein the wavelength conversion material is configured emit light having a saturated color point with a ccx between about 0.458 and 0.463 and a ccy between about 0.524 and 0.528 in response to the primary light.

19. The method of claim 17 , wherein the wavelength conversion material has a particle size distribution such that a D50 particle size of the wavelength conversion material is about 11 μm or greater.

20. The method of claim 17 , wherein the wavelength conversion material comprises a first wavelength conversion material, the method further providing a second wavelength conversion material configured to receive light emitted by the light emitting diode and to responsively emit light having a dominant wavelength greater than 600 nm.

21. The method of claim 20 , wherein a percentage of a total amount of the first and second wavelength conversion materials by weight represented by the second wavelength conversion material can be about 5% to about 40%.

22. The method of claim 17 , further comprising mounting a light-scattering lens over the wavelength conversion material, wherein the light-scattering lens is configured to scatter primary light emitted by the LED and secondary light emitted by the wavelength conversion material.