High efficiency group III nitride LED with lenticular surface
View Patent ↗A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts.
1. A high efficiency Group III nitride light emitting diode comprising:
a Group III nitride-based light emitting region comprising a plurality of Group III nitride-based layers; and
a lenticular surface that directly contacts one of said Group III nitride-based layers of said light emitting region, the lenticular surface comprising transparent material that is different from the one of said Group III nitride-based layers of said light emitting region that the lenticular surface directly contacts.
2. A light emitting diode according to claim 1 , wherein said lenticular surface directly contacts, but does not extend into, said one of said Group III nitride-based layers of said light emitting region.
3. A light emitting diode according to claim 1 wherein said lenticular surface extends into said one of said Group III nitride-based layers of said light emitting region.
4. A light emitting diode of claim 1 , wherein said lenticular surface contains silicon carbide.
5. A light emitting diode according to claim 1 wherein said lenticular surface comprises single crystal silicon carbide.
6. A light emitting diode according to claim 1 further comprising an ohmic contact to said light emitting region.
7. A light emitting diode according to claim 1 further comprising a phosphor-containing structure adjacent said lenticular surface and configured to convert emissions from said light emitting region into frequencies that will produce white light.
8. A light emitting diode according to claim 1 wherein said lenticular surface comprises a plurality of cones.
9. A light emitting diode according to claim 1 wherein said lenticular surface comprises a plurality of pyramids.
10. A light emitting diode according to claim 1 wherein said plurality of Group III nitride-based layers comprises at least one p-type layer of Group III nitride and at least one n-type layer of Group III nitride for current injection and recombination of carriers in said light emitting region.
11. A light emitting diode according to claim 1 wherein said light emitting region comprises a mesa structure.
12. A light emitting diode according to claim 11 comprising a passivation layer on at least portions of said mesa.
13. A light emitting diode according to claim 11 comprising a passivation layer on at least portions of said mesa and on at least portions of said lenticular surface.