Methods of manufacturing semiconductor light emitting devices including patternable films comprising phosphor
View Patent ↗Semiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a photopatternable film and/or a printable film including transparent silicone and phosphor. The patternable film includes an aperture therein that exposes a portion of a light emitting surface, and a bond pad is provided on the light emitting surface in the aperture. A wire bond may be provided on the bond pad. Related methods of fabricating semiconductor light emitting devices are also provided.
1. A method of fabricating a semiconductor light emitting device comprising:
coating a photopatternable film comprising phosphor on at least a portion of a light emitting surface of a semiconductor light emitting element;
selectively exposing the photopatternable film comprising phosphor to define an aperture therein that exposes a portion of the light emitting surface;
developing the photopatternable film comprising phosphor that has been exposed, to form the aperture therein that exposes the portion of the light emitting surface;
measuring light emission of the light emitting device; and
again developing the photopatternable film comprising phosphor that has been developed, to enlarge the aperture, if the light emission of the light emitting device that is measured does not conform to at least one predefined parameter.
2. A method according to claim 1 further comprising:
forming a bond pad on the exposed portion of the light emitting surface in the aperture.
3. A method according to claim 2 further comprising:
bonding a wire to the bond pad opposite the light emitting surface.
4. A method according to claim 1 wherein the light emitting surface includes a face and a sidewall that extends from the face, and wherein coating comprises coating the photopatternable film comprising phosphor on at least a portion of the face and on at least a portion of the sidewall.
5. A method according to claim 4 wherein coating comprises coating the photopatternable film comprising phosphor thicker on the at least a portion of the sidewall than on the at least a portion of the face.
6. A method according to claim 5 wherein coating comprises coating the photopatternable film comprising phosphor at least 10% thicker on the at least a portion of the sidewall than on the at least a portion of the face.
7. A method according to claim 1 wherein the phosphor is configured to convert at least some light that is emitted from the light emitting surface such that light that emerges from the semiconductor light emitting device appears as white light.
8. A method according to claim 1 wherein the at least one predefined parameter comprises an emission frequency spectrum.
9. A method according to claim 1 wherein coating is preceded by:
coating a patternable film that is free of phosphor on at least a portion of the light emitting surface.
10. A method according to claim 1 wherein coating comprises:
coating a transparent photopatternable film comprising phosphor on at least a portion of light emitting surfaces of a plurality of semiconductor light emitting elements that are monolithically integrated.
11. A method according to claim 1 wherein the photopatternable film comprising phosphor is a first photopatternable film comprising a first phosphor, the method further comprising:
coating a second photopatternable film comprising a second phosphor on the first photopatternable film comprising a first phosphor.
12. A method according to claim 11 wherein the first phosphor comprises a green phosphor and the second phosphor comprises a red phosphor.
13. A method of fabricating a plurality of semiconductor light emitting devices comprising:
mounting a plurality of semiconductor light emitting devices including corresponding light emitting surfaces, on a mounting tape;
stretching the mounting tape to define spaces between adjacent semiconductor light emitting devices; and
coating a patternable film comprising phosphor on at least a portion of the light emitting surfaces of the plurality of semiconductor light emitting elements that are mounted on the mounting tape and on the spaces between adjacent semiconductor light emitting devices.
14. A method according to claim 13 wherein the semiconductor light emitting surfaces include sidewalls and wherein coating comprises:
coating a patternable film comprising phosphor on at least a portion of the light emitting surfaces of the plurality of semiconductor light emitting elements that are mounted on the mounting tape and on the spaces between adjacent semiconductor light emitting devices so as to coat at least a portion of sidewalls of the semiconductor light emitting elements with the patternable film comprising phosphor.
15. A semiconductor light emitting device fabrication apparatus configured to perform the method of claim 1 .
16. A method according to claim 1 wherein the photopattemable film comprises transparent silicone and phosphor.
17. A semiconductor light emitting device fabrication apparatus configured to perform the method of claim 13 .
18. A method according to claim 13 wherein the photopatternable film comprises transparent silicone and phosphor.
19. A method according to claim 13 wherein mounting a plurality of semiconductor light emitting devices including corresponding light emitting surfaces, on a mounting tape comprises:
mounting a wafer that includes the plurality of semiconductor light emitting devices therein, including the corresponding light emitting surfaces, on a mounting tape; and
wherein the following is performed between the mounting a wafer that includes the plurality of semiconductor light emitting devices therein and the stretching the mounting tape to define spaces between adjacent semiconductor light emitting devices:
dicing the wafer to singulate the plurality of semiconductor light emitting devices.