High brightness, low-cri semiconductor light emitting devices including narrow-spectrum luminescent materials
View Patent ↗A semiconductor light emitting device includes an LED and a recipient luminophoric medium that includes a first narrow-spectrum luminescent material that down-converts a first portion of the radiation emitted by the LED to radiation having a first peak wavelength in the green-yellow color range and a second narrow-spectrum luminescent material that down-converts a second portion of the radiation emitted by the LED to radiation having a second peak wavelength in an orange-red color range. The first and second luminescent materials and any additional narrow-spectrum luminescent materials that are included in the recipient luminophoric medium generate at least 80% of the light emitted by the recipient luminophoric medium. A CRI value of the combined light emitted by the semiconductor light emitting device is at least 60 and less than 80.
1. A semiconductor light emitting device, comprising:
a light emitting diode (“LED”); and
a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED, the recipient luminophoric medium including at least:
a first luminescent material that down-converts a first portion of the radiation emitted by the LED to radiation having a first peak wavelength that is in a green-yellow color range, the first luminescent material having a full-width half maximum spectral width of less than 70 nanometers;
a second luminescent material that down-converts a second portion of the radiation emitted by the LED to radiation having a second peak wavelength that is in an orange-red color range, the second luminescent material having a full-width half maximum spectral width of less than 70 nanometers,
wherein the first luminescent material, the second luminescent material and any additional luminescent materials that have a full-width half maximum spectral width of less than 70 nanometers that are included in the recipient luminophoric medium generate at least 80% of the light emitted by the recipient luminophoric medium, and
wherein a CRI value of the combined light emitted by the semiconductor light emitting device is at least 60 and less than 80.
2. The semiconductor light emitting device of claim 1 , wherein the recipient luminophoric medium does not include any luminescent materials that have a full-width half maximum spectral width that exceeds 70 nanometers.
3. The semiconductor light emitting device of claim 1 , wherein the peak wavelength of the first luminescent material is between 530 nm and 548 nm.
4. The semiconductor light emitting device of claim 1 , wherein the first and second luminescent materials are the only luminescent materials included in the recipient luminophoric medium.
5. The semiconductor light emitting device of claim 4 , wherein the peak wavelength of the second luminescent material is between 60-70 nanometers greater than the peak wavelength of the first luminescent material.
6. The semiconductor light emitting device of claim 1 , wherein a peak emission power of the first luminescent material when excited by light from the LED is less than a peak emission power of the second luminescent material when excited by light from the LED.
7. The semiconductor light emitting device of claim 6 , wherein a peak emission power of the light emitted by the LED that passes through the recipient luminophoric medium is less than a peak emission power of the second luminescent material when excited by light from the LED.
8. The semiconductor light emitting device of claim 7 , wherein a peak emission power of the light emitted by the LED that passes through the recipient luminophoric medium is less than a peak emission power of the first luminescent material when excited by light from the LED.
9. The semiconductor light emitting device of claim 1 , wherein the CRI value of the combined light emitted by the semiconductor light emitting device is between 69 and 75.
10. The semiconductor light emitting device of claim 9 , wherein the light output by the semiconductor light emitting device has a correlated color temperature of between 3900 K and 5700 K.
11. The semiconductor light emitting device of claim 10 , wherein the peak wavelength of the second luminescent material is between 595 nm and 612 nm.
12. A semiconductor light emitting device, comprising:
a light emitting diode (“LED”); and
a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED, the recipient luminophoric medium including at least:
a first luminescent material that down-converts a first portion of the radiation emitted by the LED to radiation having a peak wavelength that is in a green-yellow color range, the first luminescent material having a full-width half maximum spectral width of at least 80 nanometers;
one or more second luminescent materials that each down-convert a second portion of the radiation emitted by the LED to radiation having a peak wavelength that is in an orange-red color range, each second luminescent material having a full-width half maximum spectral width of less than 45 nanometers,
wherein the one or more second luminescent materials generate at least 80% of the light emitted by luminescent materials included in the recipient luminophoric medium that have peak wavelengths above 590 nm, and
wherein a peak emission of the first luminescent material when excited by light from the LED exceeds a peak emission of each second luminescent material when excited by light from the LED,
wherein a CRI value of the combined light emitted by the semiconductor light emitting device is at least 60 and less than 80.
13. The semiconductor light emitting device of claim 12 , wherein the emission power of each second luminescent material when excited by light from the LED is less than the emission power of the first luminescent material when excited by light from the LED at all wavelengths in the visible light spectrum.
14. The semiconductor light emitting device of claim 12 , wherein the peak wavelength of the first luminescent material is between 530 nm and 548 nm.
15. The semiconductor light emitting device of claim 12 , wherein the CRI value of the combined light emitted by the semiconductor light emitting device is between 69 and 75.
16. The semiconductor light emitting device of claim 15 , wherein the semiconductor light emitting device only includes a single second luminescent material, and wherein the peak wavelength of the second luminescent material is between 595 nm and 612 nm.
17. A semiconductor light emitting device, comprising:
a light emitting diode (“LED”); and
a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED, the recipient luminophoric medium including:
a first luminescent material that down-converts a first portion of the radiation emitted by the LED to radiation having a first peak wavelength that is in a green-yellow color range, the first luminescent material having a full-width half maximum spectral width of less than 45 nanometers;
a second luminescent material that down-converts a second portion of the radiation emitted by the LED to radiation having a second peak wavelength that is in an orange-red color range, the second luminescent material having a full-width half maximum spectral width of less than 45 nanometers,
wherein a peak emission power of the light emitted by the LED that passes through the recipient luminophoric medium is less than a peak emission power of the first luminescent material when excited by light from the LED and is less than a peak emission power of the second luminescent material when excited by light from the LED,
wherein a CRI value of the combined light emitted by the semiconductor light emitting device is at least 60 and less than 80, and
wherein the first and second luminescent materials are the only luminescent materials included in the recipient luminophoric medium.
18. The semiconductor light emitting device of claim 17 , wherein the peak wavelength of the second luminescent material is between 60-70 nanometers greater than the peak wavelength of the first luminescent material.
19. The semiconductor light emitting device of claim 18 , wherein the CRI value of the combined light emitted by the semiconductor light emitting device is between 69 and 75.
20. The semiconductor light emitting device of claim 19 , wherein the peak wavelength of the second luminescent material is between 595 nm and 612 nm.
21. The semiconductor light emitting device of claim 20 , wherein the peak wavelength of the first luminescent material is between 530 nm and 548 nm.