IP Library Granted Patent US 7,139,189
Granted Patent B2
US 7,139,189 · App. 10/948,675 · Granted Nov 21, 2006

State-retentive mixed register file array

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Quick Facts
Patent No.
US 7,139,189
App. No.
10/948,675
Granted
Nov 21, 2006
Kind
B2
Abstract

A storage cell having a storage circuit and a readout circuit may be used in power-saving environments, where the storage circuit may be maintained in an ultra-drowsy mode during power-saving periods while the readout circuit may be powered down during power-saving periods. A pull-down transistor may be incorporated into the readout circuit to reduce current leakage during power-saving periods.

Claims (27)

1. An apparatus, comprising:

a bit storage cell comprising:

a storage circuit to be powered by a non-collapsible power source; and

a readout circuit to be powered by a collapsible power source and coupled to said storage circuit, the readout circuit having a first transistor disposed in a leakage path from the storage circuit during a power-saving mode, the first transistor having a gate coupled to the collapsible power source,

wherein said readout circuit further comprises a second transistor having a gate coupled to the storage circuit, the first transistor coupled between the second transistor and a ground connection of the collapsible power source.

2. The apparatus according to claim 1 , wherein said collapsible power source and said non-collapsible power source are maintained at a common voltage level during a non-power-saving mode.

3. The apparatus according to claim 2 , wherein, in a power-saving mode of operation, said collapsible power source voltage is set essentially to zero, while said non-collapsible power source voltage is set to a voltage less than said common voltage level.

4. The apparatus according to claim 1 , wherein said storage circuit comprises at least one thick-gate transistor, and wherein said readout circuit comprises at least one thin-gate transistor.

5. A system comprising:

a bit storage cell comprising:

a storage circuit to be powered by a non-collapsible power source; and

a readout circuit to be powered by a collapsible power source and coupled to said storage circuit, the readout circuit having a first transistor disposed in a leakage path from the storage circuit during a power-saving mode, the first transistor having a gate coupled to the collapsible power source; and

a battery coupled to at least one of the group consisting of said storage circuit and said readout circuit,

wherein said readout circuit further comprises a second transistor having a gate coupled to the storage circuit, the first transistor coupled between the second transistor and a ground connection of the collapsible power source.

6. The system according to claim 5 , wherein said battery comprises a rechargeable battery.

7. The system according to claim 5 , wherein said collapsible power source and said non-collapsible power source are maintained at a common voltage level during a non-power-saving mode.

8. The system according to claim 7 , wherein, in a power-saving mode of operation, said collapsible power source voltage is set essentially to zero, while said non-collapsible power source voltage is set to a voltage less than said common voltage level.

9. The apparatus according to claim 5 , wherein said storage circuit comprises at least one thick-gate transistor, and wherein said readout circuit comprises at least one thin-gate transistor.

10. A method comprising:

operating in a first mode a bit storage cell including a storage circuit powered by a non-collapsible power source and a readout circuit powered by a collapsible power source and coupled to said storage circuit, the readout circuit having a first transistor disposed in a leakage path from the storage circuit during a second mode, the first transistor having a gate coupled to the collapsible power source, said readout circuit also having a second transistor having a gate coupled to the storage circuit, the first transistor coupled between the second transistor and a ground connection of the collapsible power source; and

entering said second mode, comprising collapsing said collapsible power source.

11. The method according to claim 10 , said entering said second mode further comprising:

reducing a voltage of said non-collapsible power source.

12. The method according to claim 10 , said operating in a first mode comprising:

maintaining said collapsible power source and said non-collapsible power source at a common voltage level.

13. The method according to claim 12 , said entering said second mode further comprising:

setting said non-collapsible power source to a voltage level less than said common voltage level.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2006
From: INTEL CORPORATION
To: MARVELL INTERNATIONAL LTD.
Reel/Frame 018515/0817 →