Granted Patent B2

US 7,499,303 · App. 10/950,186 · Granted Mar 3, 2009

Abstract

Claims (21)

1. A CAM cell array, comprising:

an array of CAM cells, each of the CAM cells comprising a first cell, the first cell including a first non-volatile storage element coupled to at least one first data line and a match line, the first non-volatile storage element being one of a magnetic layer resistive element, a phase-change resistive element, and a ferroelectric capacitive element;

a match line controller coupled to the match line for controlling a match voltage applied to the match line;

a sense amp coupled to the at least first data line; and

a data line controller coupled to the data lines for controlling data voltages applied to the data lines to provide appropriate currents through the first non-volatile storage element,

wherein a write operation is performed by changing a state of the first non-volatile storage element by providing data to the at least one data line,

wherein a read operation is performed by determining the state of the first non-volatile storage element through the at least one data line by sensing a current on the at least one first data line with the sense amp,

wherein a comparison operation is performed by applying data to the at least one first data line and determining a match condition on the match line, and

wherein each of the CAM cells arranged in a row may be simultaneously written to or read from.

2. The CAM cell array of claim 1 , wherein each of the CAM cells comprises a second cell, the second cell including a second non-volatile storage element coupled to the match line and to at least one second data line, the at least one second data line being coupled to the data line controller.

3. The CAM cell array of claim 2 , wherein the CAM cell is a binary cell.

4. The CAM cell array of claim 2 , wherein the CAM cell is a ternary cell.

5. The CAM cell array of claim 2 , wherein the first non-volatile storage element and the second non-volatile storage element are both magnetic layer resistive elements.

6. The CAM cell array of claim 2 , wherein the first non-volatile storage element and the second non-volatile storage element are both phase-change resistive elements.

7. The CAM cell array of claim 2 , wherein the first non-volatile storage element and the second non-volatile storage element are both ferroelectric capacitive elements.

8. A method of operating a CAM cell in an array of CAM cells, comprising:

writing a state to the CAM cell by setting voltages of a match line and at least one data line using a match line controller and a data line controller in order to provide appropriate currents to set a state of at least one non-volatile storage element, the at least one non-volatile storage element being one of a magnetic layer resistive element, a phase-change resistive element, and a ferroelectric capacitive element;

reading the state of the CAM cell by setting voltages of the match line and determining a current from the at least one data line using a sense amp; and

comparing the state of the CAM cell with a data by applying the data to one or more of the at least one data line, setting the remaining at least one data line to a voltage, and sensing a match condition on the match line with the sense amp, wherein

reading and writing the state of all of the CAM cells in a row of the array may be performed simultaneously.

9. The method of claim 8 , wherein the state of the CAM cell is determined by the states of at least two individual cells.

Assignments (11)