Complementary metal oxide semiconductor image sensor having cross talk prevention and method for fabricating the same

1. A CMOS image sensor, comprising:

a semiconductor substrate;

device isolation regions provided on the semiconductor substrate for defining device regions therebetween;

photocharge generating portions provided on the device regions for receiving external light and for generating and storing electric charges, wherein the photocharge generating portions are enclosed by the device isolation regions;

light concentrating portions provided over the photocharge generating portions for concentrating the external light onto corresponding photocharge generating portions;

first non-transparent organic material cross talk preventing portions for preventing the light passing through the light concentrating portions from being incident onto adjacent photocharge generating portions, wherein the first cross talk preventing portions consist of reflecting layers of a deposited conductive non-transparent organic material and are immediately adjacent to the device isolation regions;

a first insulating layer covering the first cross talk preventing portions;

a plurality of color filters, conductive wires, and second insulating layers provided under the light concentrating portions; and

second non-transparent organic material cross talk preventing portions formed on one of the second insulating layers.

2. The CMOS image sensor of claim 1 , wherein the photocharge generating portions comprise photodiodes each formed as an impurity junction layer.

3. The CMOS image sensor of claim 2 , wherein the light concentrating portions comprise micro lenses each corresponding to one of the photodiodes.

4. The CMOS image sensor of claim 3 , wherein the device isolation regions comprise trench oxide films or field oxide films.

5. The CMOS image sensor of claim 1 , wherein the non-transparent organic material of the first cross talk preventing portions and the second cross talk preventing portions has electrical conductivity.

6. A method for fabricating a CMOS image sensor, comprising:

forming device isolation regions and photocharge generating portions on a semiconductor substrate;

depositing first cross talk preventing portions on the device isolation regions to form reflecting layers, such that the first cross talk preventing portions are immediately adjacent to the device isolation regions, and wherein the first cross talk preventing portions consist of a conductive non-transparent organic material;

forming an insulating layer on the whole surface of the substrate in order to completely cover the first cross talk preventing portions after the formation of the first cross talk preventing portions;

forming light concentrating portions over the insulating layer;

forming at least one layer of conductive wires and at least one layer of insulating materials on the insulating layer;

depositing second cross talk preventing portions of a conductive non-transparent organic material on the at least one layer of insulating materials on the insulating layer; and

forming color filters over the at least one layer of insulating materials.

7. The method of claim 6 , wherein the non-transparent organic material of the first cross talk preventing portions and the second cross talk preventing portions has electrical conductivity.