IP Library › Granted Patent US 7,199,029
Granted Patent B2
US 7,199,029 · App. 10/956,786 · Granted Apr 3, 2007

Selective deposition of ZnO nanostructures on a silicon substrate using a nickel catalyst and either patterned polysilicon or silicon surface modification

Assignee: Sharp Laboratories of America, Inc.
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Quick Facts
Patent No.
US 7,199,029
App. No.
10/956,786
Granted
Apr 3, 2007
Kind
B2
Abstract

Zinc-oxide nanostructures are formed by forming a pattern on a surface of a substrate. A catalyst metal, such as nickel, is formed on the surface of the substrate. Growth of at least one zinc oxide nanostructure is induced on the catalyst metal substantially over the pattern on the surface of the substrate based on a vapor-liquid-solid technique. In one exemplary embodiment, inducing the growth of at least one zinc-oxide nanostructure induces growth of each zinc-oxide nanostructure substantially over a patterned polysilicon layer. In another exemplary embodiment, when growth of at least one zinc-oxide nanostructure is induced, each zinc-oxide nanostructure grows substantially over an etched silicon substrate layer.

Claims (22)

1. A method of forming a zinc-oxide nanostructure, comprising:

forming a pattern on a surface of a substrate as follows:

forming a silicon substrate layer;

forming a silicon-oxide layer on the silicon substrate layer; and

etching the silicon-oxide layer and the silicon substrate layer to form the pattern;

forming a blanket layer of catalyst metal on the surface of the substrate, including the pattern on the surface and unpatterned surface; and

inducing growth of each zinc-oxide nanostructure on the catalyst metal substantially over the etched silicon substrate layer.

2. The method according to claim 1 , wherein the catalyst metal is nickel.

3. The method according to claim 1 , wherein the catalyst metal is selected from the group including platinum, silver, palladium and copper.

4. The method according to claim 1 , wherein etching the silicon-oxide layer and the silicon substrate layer etches the silicon substrate layer to a depth of about 5 nm.

5. The method according to claim 1 , wherein inducing growth of each zinc-oxide nanostructure on the catalyst metal is based on a vapor-liquid-solid technique.

6. A zinc-oxide nanostructure formed by:

forming a pattern on a surface of a substrate as follows:

forming a silicon substrate layer;

forming a silicon-oxide layer on the silicon substrate layer; and

etching the silicon-oxide layer and the silicon substrate layer to form the pattern;

forming a blanket layer of catalyst metal on the surface of the substrate, including the pattern on the surface and unpatterned surface; and

inducing growth of each zinc oxide nanostructure on the catalyst metal substantially over the etched silicon substrate layer.

7. The zinc-oxide nanostructure according to claim 6 , wherein the catalyst metal is nickel.

8. The zinc-oxide nanostructure according to claim 6 , wherein the catalyst metal is selected from the group including platinum, silver, palladium and copper.

9. The zinc-oxide nanostructure according to claim 6 , wherein etching the silicon-oxide layer and the silicon substrate layer etches the silicon substrate layer to a depth of about 5 nm.

10. The zinc-oxide nanostructure according to claim 6 , wherein inducing growth of each zinc-oxide nanostructure on the catalyst metal is based on a vapor-liquid-solid technique.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2007
From: SHARP LABORATORIES OF AMERICA, INC.
To: SHARP KABUSHIKI KAISHA
Reel/Frame 019795/0658 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 1, 2004
From: CONLEY, JOHN F. JR.; STECKER, LISA H.; STECKER, GREGORY M.
To: SHARP LABORATORIES OF AMERICA, INC.
Reel/Frame 015867/0436 →
Continuity (1)
Related Publication 20060071207A1 · Apr 6, 2006