Method for mounting semiconductor chip and semiconductor chip-mounted board
By arranging bonding members formed of a gold nanopaste between chip-electrodes and board-electrodes, making the chip-electrodes are brought in contact with the respective board-electrodes via the bonding members and applying ultrasonic vibrations to the bonding members in the contact state, the bonding members are bonded to the board-electrodes and the chip-electrodes.
1 . A semiconductor chip mounting method for mounting a semiconductor chip that has a chip-electrode bondable to a board-electrode of a board by bonding the chip-electrode to the board-electrode, the method comprising:
arranging a bonding member formed of a conductive material in paste form between the chip-electrode and the board-electrode and bringing the chip-electrode in contact with the board-electrode by interposing the bonding member; and
applying ultrasonic vibrations to the bonding member and either the chip-electrode or the board-electrode in the contact state, thereby the bonding member is bonded to the board-electrode and the chip-electrode.
2 . A semiconductor chip mounting method for mounting a semiconductor chip that has a plurality of chip-electrodes bondable to board-electrodes of a board by bonding the chip-electrodes to the board-electrodes, the method comprising:
arranging bonding members formed of a conductive material in paste form between the chip-electrodes and the board-electrodes and bringing the chip-electrodes in contact with the respective board-electrodes by interposing the bonding members; and
applying ultrasonic vibrations to the bonding members and either the chip-electrodes or the board-electrodes in the contact state, thereby the bonding members are bonded to the board-electrodes and the chip-electrodes.
3 . The semiconductor chip mounting method as defined in claim 2 , wherein
the conductive material in the paste form is fed by coating or printing to the board-electrodes or the chip-electrodes,
the bonding members are formed by imparting energy to the fed conductive material in the paste form, and
then, the chip-electrodes are brought in contact with the respective board-electrodes with interposition of the bonding members.
4 . The semiconductor chip mounting method as defined in claim 3 , wherein the bonding members are formed by stabilizing shapes thereof formed of the conductive material in the paste form with imparting the energy thereto, after the conductive material in the paste form is fed.
5 . The semiconductor chip mounting method as defined in claim 3 , wherein the conductive material in the paste form is a gold nanopaste, and the bonding material is a metal film produced by imparting the energy to the gold nanopaste.
6 . The semiconductor chip mounting method as defined in claim 3 , wherein the chip-electrodes are brought in contact with the respective board-electrodes with interposition of the bonding members by deforming the bonding members with pressurizing the chip-electrodes against the board-electrodes with interposition of the bonding members.
7 . The semiconductor chip mounting method as defined in claim 3 , wherein a plurality of the bonding members are formed on the individual board-electrodes or the individual chip-electrodes.
8 . The semiconductor chip mounting method as defined in claim 3 , wherein the ultrasonic vibrations are applied to the bonding members through the semiconductor chip by a component holding member in a state in which a surface to be held opposite from a surface of the semiconductor chip on which the chip-electrodes are formed is held by a holding surface of the component holding member.
9 . The semiconductor chip mounting method as defined in claim 3 , wherein the semiconductor chip has a P-type electrode and an N-type electrode, whose thickness dimensions are different from each other, as the chip-electrodes, and
the bonding members are formed so that the thickness dimensions of the bonding members are varied in accordance with a difference in a distance dimension between the chip-electrodes and the board-electrodes depending on the difference in the thickness dimension between the P-type electrode and the N-type electrode.
10 . The semiconductor chip mounting method as defined in claim 2 , wherein
the semiconductor chip has a plurality of protruding electrodes formed on the chip-electrodes,
the bonding members are formed by feeding the conductive material in the paste form to the protruding electrodes or the board-electrodes and imparting energy to the conductive material in the paste form, and
the chip-electrodes are brought in contact with the respective board-electrodes by interposition of the bonding members and the protruding electrodes.
11 . The semiconductor chip mounting method as defined in claim 10 , wherein the protruding electrodes are formed of a conductive material by a plating method.
12 . The semiconductor chip mounting method as defined in claim 10 , wherein
the semiconductor chip has a P-pole electrode and an N-pole electrode, whose thickness dimensions are different from each other, as the chip-electrodes, and
the bonding members are fed so that thickness dimensions of the bonding members are varied in accordance with a difference in a distance dimension between tips of the protruding electrodes and the board-electrodes caused by a difference in a tip height position of the protruding electrodes based on the difference in the thickness dimension of the chip-electrodes.
13 . The semiconductor chip mounting method as defined in claim 2 , wherein
the board has a plurality of protruding electrodes formed on the board-electrodes,
the bonding members are formed by feeding the conductive material in the paste form to the protruding electrodes or the chip-electrodes and imparting energy to the conductive material in the paste form, and
the chip-electrodes are brought in contact with the respective board-electrodes with interposition of the bonding members and the protruding electrodes.
14 . The semiconductor chip mounting method as defined in claim 13 , wherein
the semiconductor chip has a P-pole electrode and an N-pole electrode, whose thickness dimensions are different from each other, as the chip-electrodes,
the bonding members are fed so that thickness dimensions of the bonding members are varied in accordance with a difference in a distance dimension between the chip-electrodes and the tips of the protruding electrodes caused by a difference in a thickness dimension of the chip-electrodes.
15 . The semiconductor chip mounting method as defined in claim 3 , wherein the board-electrodes of the board are subjected to a plasma cleaning process before the contact between the chip-electrodes of the semiconductor chip and the board-electrodes of the board with interposition of the bonding members.
16 . The semiconductor chip mounting method as defined in claim 3 , wherein, after the bonding between the chip-electrodes of the semiconductor chip and the board-electrodes of the board with interposition of the bonding members, peripheries of the bonded portions are subjected to a sealing process with an insulating material.
17 . The semiconductor chip mounting method as defined in claim 3 , wherein the semiconductor chip is an LED chip, and the bonding members have a function to transfer heat generated by voltage application to the LED chip toward the board side.
18 . A semiconductor chip-mounted board comprising:
a board having a plurality of board-electrodes;
a semiconductor chip having a plurality of chip-electrodes electrically bondable to the board-electrodes; and
a plurality of bonding members that are arranged between the board-electrodes and the chip-electrodes and formed into a metal film by imparting energy to a gold nanopaste,
wherein the semiconductor chip being mounted on the board by bonding the chip-electrodes to the respective board-electrodes with interposition of the bonding members by adhesion of the bonding members to the board-electrodes or the chip-electrodes.
19 . A semiconductor chip mounting method for mounting a semiconductor chip that has a plurality of chip-electrodes on a board that has a plurality of board-electrodes, the method comprising:
arranging bonding members formed by imparting energy to a conductive material in paste form between the chip-electrodes and the board-electrodes; pressurizing the chip-electrodes against the respective board-electrodes with interposition of the bonding members between the chip-electrodes and the board-electrodes; and deforming the bonding members, thereby bringing the chip-electrodes in contact with the respective board-electrodes with interposition of the bonding members.