IP Library Patent Application 10960176
Patent Application
App. No. 10/960,176

High-precision feedback control for ion sculpting of solid state features

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Quick Facts
Patent No.
US None
App. No.
10/960,176
Abstract

The invention provides a method for controlled fabrication of a solid state structural feature. In the method, a solid state structure is provided and the structure is exposed to an ion beam, under fabrication process conditions for producing the structural feature. A physical detection species is directed toward a designated structure location, and the rate at which the detection species proceeds from the designated structure location is measured. Detection species rate measurements are fit to a mathematical model, and the fabrication process conditions are controlled, based on the fitted detection species rate measurements, to fabricate the structural feature.

Claims (41)

1 . A method for controlled fabrication of a solid state structural feature, comprising:

providing a solid state structure;

exposing the structure to an ion beam under fabrication process conditions for producing the structural feature;

directing a physical detection species toward a designated structure location;

measuring a rate at which the detection species proceeds from the designated structure location;

fitting detection species rate measurements to a mathematical model; and

controlling the fabrication process conditions based on the fitted detection species rate measurements to fabricate the structural feature.

2 . The method of claim 1 wherein measuring detection species rate comprises making a measurement of count of the species as the species proceeds from the designated structure location.

3 . The method of claim 1 further comprising storing detection species rate measurements.

4 . The method of claim 1 further comprising adjusting the mathematical model based on the fitted detection species rate measurements.

5 . The method of claim 1 wherein fitting detection species rate measurements comprises fitting a selected number of previously acquired detection species rate measurements.

6 . The method of claim 1 wherein the mathematical model includes parameters reflecting characteristics of the fabrication process.

7 . The method of claim 1 wherein the mathematical model is a polynomial expression.

8 . The method of claim 1 wherein the mathematical model is a statistical average of previously acquired detection species rate measurements.

9 . The method of claim 1 wherein controlling the fabrication process conditions is based on determining if a preselected detection species rate has been met.

10 . The method of claim 9 wherein if a preselected detection species rate has been met, then the ion exposure is continued without further measurement of detection species rates.

11 . The method of claim 9 wherein if a preselected detection species rate has been met, then the fabrication process conditions are adjusted to complete the structural feature fabrication.

12 . The method of claim 1 wherein controlling the fabrication process conditions is based on determining if measurement of detection species rates is to be continued.

13 . The method of claim 1 wherein controlling the fabrication process conditions is carried out during the ion exposure.

14 . The method of claim 1 wherein the ion exposure comprises periodic ion exposure with a duty cycle of an ion packet duration and a nonexposure duration.

15 . The method of claim 14 wherein controlling the fabrication process conditions comprises controlling ion packet duration.

16 . The method of claim 14 wherein controlling the fabrication process conditions comprises controlling ion exposure duty cycle.

17 . The method of claim 1 wherein controlling the fabrication process conditions comprises controlling ion energy.

18 . The method of claim 1 wherein controlling the fabrication process conditions comprises controlling ion species.

19 . The method of claim 1 wherein controlling the fabrication process conditions comprises controlling structure temperature.

20 . The method of claim 1 wherein controlling the fabrication process conditions comprises controlling process pressure.

21 . The method of claim 1 wherein controlling the fabrication process conditions comprises terminating exposure of the structure to the ion beam at a time when the fitted detection species rate measurements indicate completion of the structural feature fabrication.

22 . The method of claim 1 wherein the physical detection species comprises ions.

23 . The method of claim 1 wherein the structure comprises a semiconductor substrate.

24 . The method of claim 1 wherein the structure comprises a membrane.

25 . The method of claim 1 wherein the structure comprises a substrate including a layer in which the structural feature is to be fabricated.

26 . The method of claim 1 wherein the structural feature is an aperture in the structure and the designated structure location is through the aperture.

27 . The method of claim 26 wherein the aperture comprises an array of apertures.

28 . The method of claim 26 wherein the fabrication process conditions are selected to reduce an initial aperture diameter.

29 . The method of claim 26 wherein the fabrication process conditions are selected to increase an initial aperture diameter.

30 . The method of claim 26 wherein the fabrication process conditions are selected to etch the aperture in the structure.

31 . The method of claim 1 wherein the structural feature is a gap between at least two structural edges and the designated structure location is through the aperture.

32 . The method of claim 31 wherein the fabrication process conditions are selected to reduce an initial gap in the structure.

33 . The method of claim 31 wherein the fabrication process conditions are selected to increase an initial gap in the structure.

34 . The method of claim 1 wherein the physical detection species is directed toward a designated structure location during ion beam exposure of the structure.

35 . The method of claim 1 wherein the physical detection species is directed toward a designated structure location at a time when the structure is not exposed to the ion beam.

Assignments (4)
CONFIRMATORY LICENSE Recorded Oct 25, 2006
From: HARVARD UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 018432/0408 →
CONFIRMATORY LICENSE Recorded Sep 8, 2005
From: HARVARD UNIVERSITY
To: AIR FORCE, UNITED STATES
Reel/Frame 016744/0570 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2005
From: YEFCHAK, GEORGE; PITTARRO, RICHARD; FLORY, CURT A
To: AGILENT TECHNOLOGIES, INC.
Reel/Frame 016265/0849 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 21, 2005
From: GOLOVCHENKO, JENE A; STEIN, DEREK M
To: PRESIDENT AND FELLOWS OF HARVARD COLLEGE
Reel/Frame 015697/0610 →