Chemical mechanical polishing pad and method for selective metal and barrier polishing
The present invention is directed, in general, to a polishing pad comprising a polishing body. The polishing body comprises a thermoplastic foam substrate having a surface comprising concave cells. The thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene. The thermoplastic foam substrate has a hardness ranging from about 24 Shore A to about 100 Shore A. Other embodiments include a method for preparing the polishing pad, a polishing apparatus that includes the polishing pad, and a method of polishing a semiconductor substrate using the polishing pad.
1 . A polishing pad comprising:
a polishing body comprising a thermoplastic foam substrate having a surface comprised of concave cells, wherein said thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene, said thermoplastic foam substrate having a hardness ranging from about 24 Shore A to about 100 Shore A.
2 . The polishing pad as recited in claim 1 , wherein an interior of said thermoplastic foam substrate comprises a closed-cell foam.
3 . The polishing pad as recited in claim 1 , wherein said blend has an ethylene vinyl acetate copolymer:polyethylene ratio ranging from about 0.6:9.4 to about 9:1.
4 . The polishing pad as recited in claim 1 , wherein said blend has an ethylene vinyl acetate copolymer:polyethylene ratio ranging from about 8:1 to about 10:1.
5 . The polishing pad as recited in claim 1 , wherein said blend has an ethylene vinyl acetate copolymer:polyethylene ratio ranging from about 4:6 to about 6:4.
6 . The polishing pad as recited in claim 1 , wherein said blend has an ethylene vinyl acetate copolymer:polyethylene ratio of less than about 5:5.
7 . The polishing pad as recited in claim 1 , wherein said thermoplastic foam substrate has a hardness ranging from about 24 Shore A to about 34 Shore A.
8 . The polishing pad as recited in claim 1 , wherein said thermoplastic foam substrate has a hardness ranging from about 34 Shore A to about 55 Shore A.
9 . The polishing pad as recited in claim 1 , wherein said thermoplastic foam substrate has a hardness ranging from about 55 Shore A to about 65 Shore A.
10 . The polishing pad as recited in claim 1 , wherein said concave cells have an average size ranging from about 1 microns to about 25 microns.
11 . The polishing pad as recited in claim 1 , wherein said polyethylene is a low-density polyethylene.
12 . The polishing pad as recited in claim 8 , wherein said polyethylene is a medium-density polyethylene.
13 . The polishing pad as recited in claim 8 , wherein said ethylene vinyl acetate copolymer comprises from about 15 to about 20 wt % acetate.
14 . A method for preparing a polishing pad comprising:
providing a polishing body comprising a thermoplastic foam substrate, where said thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene, said thermoplastic foam substrate having a hardness ranging from about 24 Shore A to about 100 Shore A; and
exposing cells within said thermoplastic foam substrate to form a surface comprising concave cells.
15 . The method as recited in claim 14 , wherein said blend has an ethylene vinyl acetate copolymer:polyethylene ratio ranging from about 0.6:9.4 to about 9:1.
16 . A polishing apparatus comprising:
a mechanically driven carrier head;
a polishing platen, said carrier head being positionable against said polishing platen to impart a polishing force against said polishing platen; and
a polishing pad attached to said polishing platen, said polishing pad including:
a polishing body comprising a thermoplastic foam substrate having a surface comprised of concave cells, wherein said thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene, said thermoplastic foam substrate having a hardness ranging from about 24 Shore A to about 100 Shore A.
17 . The polishing apparatus as recited in claim 16 , wherein said polishing pad is capable of successively polishing a metal layer and a barrier layer on a semiconductor substrate at a ratio of removal rates of said barrier layer to said metal layer ranging from about 1:1 to about 5:1.
18 . The polishing apparatus as recited in claim 17 , wherein said barrier layer is selected from the group consisting of: tantalum, titanium, tantalum nitride and titanium nitride, and said metal layer comprises copper or tungsten.
19 . A method for polishing a semiconductor wafer comprising:
providing a semiconductor substrate having a barrier layer over said semiconductor substrate and a metal layer over said barrier layer;
polishing said metal layer using a polishing pad,
wherein said polishing pad includes a polishing body comprising a thermoplastic foam substrate having a surface comprised of concave cells, wherein said thermoplastic foam substrate comprises a blend of cross-linked ethylene vinyl acetate copolymer and polyethylene copolymer, said thermoplastic foam substrate having a hardness ranging from about 24 Shore A to about 100 Shore A; and
polishing said barrier layer using said polishing pad.
20 . The method as recited in claim 19 , wherein said polishing pad in cooperation with said first and second slurry is capable of polishing said metal layer and said barrier layer at a ratio of removal rates of said barrier layer to said metal layer ranging from about 1:1 to about 5:1.