Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device using the same
An epoxy resin composition for encapsulating an optical semiconductor element, which has small internal stress and also can obtain good light transmittance within a broad temperature range. An epoxy resin composition for encapsulating an optical semiconductor element comprising the following component (A): (A) an epoxy resin complex which comprises an epoxy resin as the matrix component and silicon dioxide particles (a) dispersed therein: (a) silicon dioxide particles having an average particle size of from 5 to 40 nm measured by the small angle neutron scattering (SANS).
1. An epoxy resin composition for encapsulating an optical semiconductor element, comprising:
(A) an epoxy resin complex which comprises an epoxy resin as the matrix component and silicon dioxide particles (a) dispersed therein:
said silicon dioxide particles (a) having an average particle size of from 5 to 40 nm measured by the small angle neutron scattering (SANS)
(B) a curing agent, and
(C) glass powder,
wherein the relationship between an index of refraction (n1) of a cured product prepared by curing components other than a glass powder of component (C) in the epoxy resin composition for encapsulating an optical semiconductor element and an index of refraction (n2) of the component (C) satisfies the following formula (1):
−0.01≦( n 2 −n 1)≦0.01
wherein
n1: index of refraction of a cured product prepared by curing components other than the component (C) at a wavelength of 589.3 nm
n2: index of refraction of the component (C) at a wavelength of 589.3 nm.
2. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 , wherein containing ratio of the silicon dioxide particles (a) in the component (A) is within the range of from 5 to 50% by weight based on the total weight of the epoxy resin composition.
3. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 , wherein the total amount of the silicon dioxide particles (a) in the component (A) and glass powder as the component (C) is within the range of from 10 to 75% by weight based on the total weight of the epoxy resin composition.
4. An optical semiconductor device comprising the epoxy resin composition for encapsulating an optical semiconductor element described in any one of the claims 2 to 3 and an optical semiconductor element, wherein said optical semiconductor element is sealed with said epoxy resin composition.
5. The epoxy resin for encapsulating an optical semiconductor element according to claim 1 , wherein the glass powder component (C) has an average particle size of from 5 to 100 μm.
6. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 , wherein the glass powder component (C) comprises SiO 2 alone or a preparation comprising SiO 2 and B 2 O 3 as the main components and optionally at least one component selected from the group consisting of zinc, titianium, cerium, bismuth, lead and selenium formulated with the main components.
7. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 1 , wherein the glass powder component (C) is spherical glass powder.
8. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 7 , wherein the index of refraction is 1.56 or lower.
9. The epoxy resin composition for encapsulating an optical semiconductor element according to claim 7 , wherein the index of refraction is 1.53 to 1.56.