Pass bandwidth control in decoupled stacked bulk acoustic resonator devices
View Patent ↗The decoupled stacked bulk acoustic resonator (DSBAR) device has a lower film bulk acoustic resonator (FBAR), an upper FBAR stacked on the lower FBAR, and an acoustic decoupler between the FBARs. Each of the FBARs has opposed planar electrodes and a layer of piezoelectric material between the electrodes. The acoustic decoupler has acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances. The acoustic impedances and thicknesses of the acoustic decoupling layers determine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device. Process-compatible acoustic decoupling materials can then be used to make acoustic decouplers with acoustic impedances (and pass bandwidths) that are not otherwise obtainable due to the lack of process-compatible acoustic decoupling materials with such acoustic impedances.
1. A decoupled stacked bulk acoustic resonator (DSBAR) device, comprising:
a lower film bulk acoustic resonator (FBAR) and an upper FBAR stacked on the lower FBAR, each FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes; and
an acoustic decoupler between the FBARs, the acoustic decoupler comprising a first acoustic decoupling layer of a first acoustic decoupling material and a second acoustic decoupling layer of a second acoustic decoupling material, the first acoustic decoupling material having an acoustic impedance different from the second acoustic decoupling material, wherein one of the first acoustic decoupling material and the second acoustic decoupling material have an acoustic impedance of about 2 Mrayl, in which the DSBAR device is characterized by a center frequency and the acoustic impedances and thicknesses of the acoustic decoupling layers are chosen to cause the acoustic decoupler to impose a nominal phase change of an odd integral multiple of π/2 on an acoustic signal equal in frequency to the center frequency.
2. The DSBAR device of claim 1 , in which one of the acoustic decoupling materials comprises a crosslinked polyphenylene polymer.
3. The DSBAR device of claim 1 , in which the odd integral multiple is unity.
4. The DSBAR device of claim 1 , wherein the acoustic impedance of the acoustic decoupler is intermediate between a first acoustic impedance associated with the first acoustic decoupling material and a second acoustic impedance associated with the second acoustic decoupling material.
5. The DSBAR device of claim 1 , in which:
the first and second acoustic decoupling layers have respective thicknesses; and
the acoustic impedance of the acoustic decoupler is determined by the thicknesses of the acoustic decoupling layers.
6. The DSBAR device of claim 1 , in which:
one of the acoustic decoupling materials comprises polyimide; and
another of the acoustic decoupling materials comprises a crosslinked polyphenylene polymer.
7. The DSBAR device of claim 6 , in which the crosslinked polyphenylene polymer is prepared from a precursor solution having oligomers that polymerize.
8. The DSBAR device of claim 1 , in which one of the acoustic decoupling materials comprises polyimide.
9. The DSBAR device of claim 1 , in which one of the acoustic decoupling materials comprises a crosslinked polyphenylene polymer.
10. The DSBAR device of claim 1 , in which one of the acoustic decoupling materials comprises poly(para-xylylene).
11. The DSBAR device of claim 1 , additionally comprising:
an additional lower FBAR and an additional upper FBAR stacked on the additional lower FBAR, each additional FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes;
an additional acoustic decoupler between the additional FBARs, the additional acoustic decoupler comprising acoustic decoupling layers of acoustic decoupling materials having different acoustic impedances;
a first electrical circuit interconnecting the lower FBARs; and
a second electrical circuit interconnecting the upper FBARs.