Film acoustically-coupled transformer
View Patent ↗One embodiment of the film acoustically-coupled transformer (FACT) includes a decoupled stacked bulk acoustic resonator (DSBAR) having a lower film bulk acoustic resonator (FBAR) an upper FBAR stacked on the lower FBAR, and, between the FBARs, an acoustic decoupler comprising a layer of acoustic decoupling material. Each FBAR has opposed planar electrodes with a piezoelectric element between them. The FACT additionally has first terminals electrically connected to the electrodes of one FBAR and second terminals electrically connected to the electrodes of the other FBAR. Another embodiment has decoupled stacked bulk acoustic resonators (DSBARs), each as described above, a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs. The FACT provides impedance transformation, can linking single-ended circuitry with balanced circuitry or vice versa and electrically isolates primary and secondary. Some embodiments are additionally electrically balanced.
1. A film acoustically-coupled transformer (FACT), comprising:
decoupled stacked bulk acoustic resonators (DSBARs), each comprising:
a lower film bulk acoustic resonator (FBAR),
an upper FBAR stacked on the lower FBAR, each of the FBARs comprising opposed planar electrodes arranged such that a pair of opposed planar electrodes of the lower FBARs are coupled to one another via a trace formed over a cavity, and
a piezoelectric element between the electrodes, and between the lower and upper FBARs,
an acoustic decoupler comprising a layer of acoustic decoupling material;
first terminals electrically connected to the electrodes of the lower FBARs; and
second terminals electrically connected to the electrodes of the upper FBARs.
2. The FACT of claim 1 , in which the acoustic decoupling material is lower in acoustic impedance than the piezoelectric element.
3. The FACT of claim 2 , in which the acoustic decoupling material is intermediate in acoustic impedance between the piezoelectric element and air.
4. The FACT of claim 2 , in which the acoustic decoupling material has an acoustic impedance in the range from about 2 Mrayl to about 8 Mrayl.
5. The FACT of claim 2 , in which the acoustic coupling material comprises polyphenylene.
6. The FACT of claim 2 , in which the acoustic decoupling material comprises polyimide.
7. The FACT of claim 2 , in which the acoustic decoupling material comprises poly(para-xylylene).
8. The FACT of claim 1 , in which the acoustic decoupling material comprises crosslinked polyphenylene polymer formed from a precursor solution.
9. The FACT of claim 1 , in which: the FACT has a pass band characterized by a center frequency; and the layer of acoustic decoupling material has a nominal thickness equal to an odd integral multiple of one quarter of the wavelength in the acoustic decoupling material of an acoustic signal equal in frequency to the center frequency.
10. The FACT of claim 9 , in which odd integral multiple is unity.
11. A film acoustically-coupled transformer (FACT), comprising:
decoupled stacked bulk acoustic resonators (DSBARs), each of the DSBARs comprising:
a lower film bulk acoustic resonator (FBAR),
an upper FBAR stacked on the lower FBAR, each FBAR comprising opposed planar electrodes arranged such that a pair of opposed planar electrodes of the lower FBARs are coupled to one another via a trace formed over a filled cavity in a substrate, and
a piezoelectric element between the electrodes, and between the lower and upper FBARs,
an acoustic decoupler comprising a layer of acoustic decoupling material;
a first electrical circuit interconnecting the lower FBARs; and
a second electrical circuit interconnecting the upper FBARs.
12. The FACT of claim 11 , in which:
the first electrical circuit interconnects the lower FBARs in one of (a) series and (b) anti-parallel; and
the second electrical circuit interconnects the upper FBARs in one of (c) series and (d) anti-parallel.
13. The FACT of claim 12 , in which:
the FACT additionally comprises first terminals and second terminals;
the first electrical circuit additionally connects the lower FBARs to the first terminals; and
the second electrical circuit additionally connects the upper FBARs to the second terminals.
14. The FACT of claim 11 , in which:
the first electrical circuit connects the lower FBARs in one of (a) parallel and (b) anti-series; and
the second electrical circuit connects the upper FBARs in one of (c) parallel and (d) anti-series.
15. The FACT of claim 11 , in which the acoustic decoupling material comprises polyphenylene.
16. The FACT of claim 11 , in which the acoustic decoupling material comprises polyimide.
17. The FACT of claim 11 , in which the acoustic decoupling material comprises poly(para-xylylene).
18. The FACT of claim 11 , in which the acoustic decoupling material comprises a crosslinked polyphenylene polymer.
19. The FACT of claim 18 , in which the crosslinked polyphenylene polymer is formed from a precursor solution.
20. A film acoustically-coupled transformer (FACT), comprising:
decoupled stacked bulk acoustic resonators (DSBARs), comprising:
a lower film bulk acoustic resonator (FBAR),
an upper FBAR stacked on the lower FBAR, each of the FBARs comprising opposed planar electrodes arranged such that a pair of opposed planar electrodes of the lower FBARs are coupled to one another via a trace formed over a filled cavity in a substrate, and
a piezoelectric element between the electrodes, and between the lower and upper FBARs,
an acoustic decoupler comprising a layer of acoustic decoupling material having an acoustic impedance of about 2 Mrayl to about 8 Mrayl, the acoustic decoupler shaped to expose part of the surface of the fill material and patterned to provide access to additional parts of the surface of the fill material;
first terminals electrically connected to the electrodes of the lower FBARs via a first electrical circuit; and
second terminals electrically connected to the electrodes of the upper FBARs via a second electrical circuit.
21. The FACT of claim 20 , wherein the first and second electrical circuits are configured to generate a 1:1 impedance transformation ratio.
22. The FACT of claim 20 , wherein the first and second electrical circuits are configured to generate a 1:4 impedance transformation ratio.
23. The FACT of claim 20 , wherein the first and second electrical circuits are configured to generate a 4:1 impedance transformation ratio.