MOS capacitor device
View Patent ↗A semiconductor device in which a dielectric breakdown of a gate oxide in a MOS capacitor can be prevented and in which a circuit area can be reduced. The semiconductor device comprises an NMOS transistor a gate of which is connected to a terminal VDD on a high potential side and a PMOS transistor a gate of which is connected to a terminal GND on a low potential side, source/drain (S/D) regions of the NMOS transistor and source/drain (S/D) regions of the PMOS transistor being electrically connected.
1. A semiconductor device having MOS transistors which function as capacitors, the device comprising:
an n-channel MOS transistor a gate of which is connected to a terminal on a high potential side wherein a first MOS capacitor is formed; and
a p-channel MOS transistor a gate of which is connected to a terminal on a low potential side wherein a second MOS capacitor is formed, wherein
the first and second MOS capacitors are connected in series,
source/drain regions of the n-channel MOS transistor and source/drain regions of the p-channel MOS transistor are electrically connected,
parasitic diodes formed between the source/drain regions of the n-channel MOS transistor and a substrate region thereof and parasitic diodes formed between the source/drain regions of the p-channel MOS transistor and a substrate region thereof are electrically connected,
the substrate region of the n-channel MOS transistor is connected to a terminal on the low potential side, and the substrate region of the p-channel MOS transistor is connected to a terminal on the high potential side, and
a direct current path from a high-potential-side terminal through the parasitic diodes of the n-channel MOS transistor and the parasitic diodes of the p-channel MOS transistor to a low-potential-side terminal is formed.
2. The semiconductor device according to claim 1 , wherein an intermediate potential between the MOS capacitors is a potential between the parasitic diodes formed in the n-channel MOS transistor and the parasitic diodes formed in the p-channel MOS transistor which are electrically connected.