Film bulk acoustic resonator (FBAR) devices with simplified packaging
View Patent ↗The encapsulated film bulk acoustic resonator (FBAR) device comprises a substrate, an FBAR stack over the substrate, an element for acoustically isolating the FBAR stack from the substrate, encapsulant covering the FBAR stack, and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant. The FBAR stack comprises an FBAR and has a top surface remote from the substrate. The FBAR comprises opposed planar electrodes and a piezoelectric element between the electrodes. The acoustic Bragg reflector comprises a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer. The large ratio between the acoustic impedances of the metal of the metal Bragg layer and the plastic material of the plastic Bragg layer enables the acoustic Bragg reflector to provide sufficient acoustic isolation between the FBAR and the encapsulant for the frequency response of the FBAR device to exhibit minor, if any, spurious artifacts arising from undesirable acoustic coupling between the FBAR and the encapsulant.
1. An encapsulated film bulk acoustic resonator (FBAR) device, comprising:
a substrate;
an FBAR stack over the substrate, the FBAR stack comprising an FBAR and having a top surface remote from the substrate, the FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes;
means for acoustically isolating the FBAR stack from the substrate;
encapsulant covering the FBAR stack; and
an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant, the acoustic Bragg reflector comprising a metal Bragg layer and a plastic Bragg layer juxtaposed with the metal Bragg layer, wherein:
the FBAR device has a band-pass characteristic having a center frequency; at least one of the Bragg layers has a nominal thickness equal to one quarter of the wavelength in the material of the respective Bragg layer of an acoustic signal equal in frequency to the center frequency; and the metal Bragg layer is thinner than the nominal thickness.
2. The encapsulated FBAR device of claim 1 , in which the plastic Bragg layer comprises polyimide.
3. The encapsulated FBAR device of claim 1 , in which the plastic Bragg layer comprises parylene.
4. The encapsulated FBAR device of claim 1 , in which the plastic Bragg layer comprises a crosslinked polyphenylene polymer.
5. The encapsulated FBAR device of claim 1 , in which the metal Bragg layer is juxtaposed with the encapsulant.
6. The encapsulated FBAR device of claim 1 , in which the metal Bragg layer comprises a refractory metal.
7. The encapsulated FBAR device of claim 1 , in which: the metal Bragg layer is a first metal Bragg layer; the acoustic Bragg reflector additionally comprises a second metal Bragg layer juxtaposed with the plastic Bragg layer opposite the first metal Bragg layer.
8. The encapsulated FBAR device of claim 7 , in which: the plastic Bragg layer is a first plastic Bragg layer; The acoustic Bragg reflector additionally comprises a second plastic Bragg layer juxtaposed with the second metal Bragg layer opposite the first plastic Bragg layer.
9. The encapsulated FBAR device of claim 1 , in which: the FBAR is a lower FBAR; and the FBAR device additionally comprises: an upper FBAR stacked on the lower FBAR, the upper FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes, and an acoustic decoupler between the FBARs.
10. The encapsulated FBAR device of claim 9 , in which: the lower FBAR, the upper FBAR and the acoustic decoupler constitute a first decoupled stacked bulk acoustic resonator (DSBAR); the FBAR stack additionally comprises a second DSBAR, comprising a lower FBAR, an upper FBAR and an acoustic decoupler between the FBARs; and the FBAR device additionally comprises: a first electrical circuit interconnecting the lower FBARs, and a second electrical circuit interconnecting the upper FBARs.
11. The encapsulated FBAR device of claim 9 , in which the metal Bragg layer comprises a refractory metal.
12. The encapsulated FBAR device of claim 9 , in which at least one of the plastic Bragg layers comprises polyimide.
13. The encapsulated FBAR device of claim 9 , in which at least one of the plastic Bragg layers comprises parylene.
14. The encapsulated FBAR device of claim 9 , in which at least one of the plastic Bragg layer comprises a crosslinked polyphenylene polymer.
15. The encapsulated FBAR device of claim 1 , in which: the FBAR is a first FBAR; the FBAR stack additionally comprises one or more additional FBARs; and the FBARs are interconnected as a ladder filter.
16. The encapsulated FBAR device of claim 1 , in which the means for acoustically isolating the FBAR stack from the substrate comprises a cavity defined in the substrate over which the FBAR stack is suspended.
17. The encapsulated FBAR device of claim 1 , in which: the acoustic Bragg reflector is a first acoustic Bragg reflector, and the means for acoustically isolating the FBAR stack from the substrate comprises a second acoustic Bragg reflector, the second acoustic Bragg reflector comprising a metal Bragg layer juxtaposed with a plastic Bragg layer.
18. An encapsulated film bulk acoustic resonator (FBAR) device, comprising:
a substrate;
an FBAR stack over the substrate, the FBAR stack comprising an FBAR and having a top surface remote from the substrate, the FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes;
means for acoustically isolating acoustically the FBAR stack from the substrate; encapsulant covering the FBAR stack; and
an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant, the acoustic Bragg reflector comprising a first Bragg layer and a second Bragg layer juxtaposed with the first Bragg layer, the first Bragg layer comprising a first material having an acoustic impedance less than five Mrayl and the second Bragg layer comprising a second material having an acoustic impedance greater than 50 Mrayl wherein:
the FBAR device has a band-pass characteristic having a center frequency: at least one of the Bragg layers has a nominal thickness equal to one quarter of the wavelength in the material of the respective Bragg layer of an acoustic signal equal in frequency to the center frequency; and the metal Bragg layer is thinner than the nominal thickness.
19. The FBAR device of claim 18 , in which: the first material has an acoustic impedance less than three Mrayl; and the second material has an acoustic impedance greater than 60 Mrayl.
20. An encapsulated film bulk acoustic resonator (FBAR) device, comprising:
a substrate;
an FBAR stack over the substrate, the FBAR stack comprising an FBAR and having a top surface remote from the substrate, the FBAR comprising opposed planar electrodes and a piezoelectric element between the electrodes;
means for acoustically isolating acoustically the FBAR stack from the substrate;
encapsulant covering the FBAR stack;
and an acoustic Bragg reflector between the top surface of the FBAR stack and the encapsulant, the acoustic Bragg reflector comprising a first Bragg layer and a second Bragg layer juxtaposed with the first Bragg layer, the first Bragg layer comprising a first material having a first acoustic impedance and the second Bragg layer comprising a second material having a second acoustic impedance, the second acoustic impedance and the first acoustic impedance having a ratio greater than ten wherein:
the FBAR device has a band-pass characteristic having a center frequency; at least one of the Bragg layers has a nominal thickness equal to one quarter of the wavelength in the material of the respective Bragg layer of an acoustic signal equal in frequency to the center frequency; and the metal Bragg layer is thinner than the nominal thickness.
21. The FBAR device of claim 20 , in which the second acoustic impedance and the first acoustic impedance have a ratio greater than 16.