Growth and integration of epitaxial gallium nitride films with silicon-based devices
Epitaxial gallium nitride is grown on a silicon substrate while reducing or suppressing the formation of a buffer layer. The gallium nitride may be grown directly on the silicon substrate, for example using domain epitaxy. Alternatively, less than one complete monolayer of silicon nitride may be formed between the silicon and the gallium nitride. Subsequent to formation of the gallium nitride, an interfacial layer of silicon nitride may be formed between the silicon and the gallium nitride.
1. A method of fabricating a gallium nitride thin film comprising:
heteroepitaxially growing a gallium nitride single-crystal thin film directly on a silicon substrate, wherein heteroepitaxially growing comprises heteroepitaxially growing a gallium nitride single-crystal thin film directly on a silicon substrate using domain epitaxy wherein integral multiples of lattice planes of the gallium nitride single-crystal thin film match with planes of the silicon substrate.
2. A method according to claim 1 wherein heteroepitaxially growing comprises heteroepitaxially growing a gallium nitride single-crystal thin film directly on a silicon substrate using domain epitaxy.
3. A method according to claim 1 wherein heteroepitaxially growing comprises heteroepitaxially growing a gallium nitride single-crystal thin film directly on a silicon substrate while forming less than one complete monolayer of silicon nitride therebetween.
4. A method according to claim 2 wherein heteroepitaxially growing comprises heteroepitaxially growing a gallium nitride single-crystal thin film directly on a silicon substrate using domain epitaxy while forming less than one complete monolayer of silicon nitride therebetween.
5. A method according to claim 1 wherein heteroepitaxially growing is followed by:
forming a layer comprising silicon nitride between the silicon substrate and the gallium nitride single-crystal thin film that was heteroepitaxially grown directly on the silicon substrate.
6. A method according to claim 4 wherein heteroepitaxially growing is followed by:
forming a layer comprising silicon nitride between the silicon substrate and the gallium nitride single-crystal thin film that was heteroepitaxially grown directly on the silicon substrate.
7. A method according to claim 1 wherein the silicon substrate is a (111) silicon substrate and wherein the gallium nitride single-crystal thin film has a wurtzite structure.
8. A method according to claim 1 wherein integral multiples of lattice planes of the gallium nitride single-crystal thin film match with planes of the silicon substrate in a ratio of 4:5 or 5:6.
9. A method according to claim 8 wherein an orientation of the gallium nitride single-crystal thin film to the (111) silicon substrate is defined by:
GaN[0002]∥Si[111], GaN[2 1 1 0]∥Si[ 1 10] and GaN[01 1 0]∥Si[ 2 11].
10. A method of fabricating a gallium nitride thin film comprising:
domain epitaxially growing a gallium nitride single-crystal thin film on a silicon substrate wherein domain epitaxially growing comprises matching integral multiples of lattice planes of the gallium nitride single-crystal thin film with planes of the silicon substrate.
11. A method according to claim 10 wherein domain epitaxially growing comprises domain epitaxially growing a gallium nitride single-crystal thin film on a silicon substrate while forming less than one complete monolayer of silicon nitride therebetween.
12. A method according to claim 10 wherein domain epitaxially growing is followed by:
forming a layer comprising silicon nitride between the silicon substrate and the gallium nitride single-crystal thin film that was domain epitaxially grown on the silicon substrate.
13. A method according to claim 10 wherein the silicon substrate is a (111) silicon substrate and wherein the gallium nitride single-crystal thin film has a wurtzite structure.
14. A method according to claim 10 wherein integral multiples of lattice planes of the gallium nitride single-crystal thin film match with planes of the silicon substrate in a ratio of 4:5 or 5:6.
15. A method according to claim 14 wherein an orientation of the gallium nitride single-crystal thin film to the (111) silicon substrate is defined by:
GaN[0002]∥Si[111], GaN[2 1 1 0]∥Si[ 1 10] and GaN[01 1 0]∥Si[ 2 11].