Method for fabricating CMOS image sensor protecting low temperature oxide delamination
A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask; forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region; forming a color filter, a planarization layer and a microlens, sequentially; forming a low temperature oxide layer on the above structure to protect the microlens; and opening the pad metal by selectively etching the low temperature oxide layer and the oxide layer formed around the pad open region by a second pad mask.
1. A method for fabricating an image sensor, comprising the steps of:
forming a passivation layer on a pad metal;
exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask;
forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region;
sequentially forming a color filter, a planarization layer and a microlens, and forming a low temperature oxide layer on the resulting structure to protect the microlens; and
partially etching the low temperature oxide layer and the oxide layer over the pad metal to expose a select part of the pad without exposing the patterned passivation layer.
2. The method of claim 1 , wherein the step of exposing the passivation layer by the first pad mask is performed so as to form holes encircling the exposed part of the pad metal.
3. The method of claim 1 , wherein the step of exposing the passivation layer by the first pad mask is performed so as to form a string encircling the exposed part of the pad metal.
4. The method of claim 1 , wherein an area of the second pad mask is smaller than that of the first pad mask.
5. A method for fabricating an image sensor, comprising the steps of:
forming a passivation layer over a pad metal;
depositing an oxide layer on the passivation layer;
exposing a predetermined part of the pad metal by patterning the passivation layer and the oxide layer using a first pad mask;
sequentially forming a color filter, a planarization layer, and a microlens and depositing a low temperature oxide layer on the above structure to protect the microlens; and
partially etching the low temperature oxide layer over the pad metal to expose a select part of the pad metal without exposing the patterned passivation layer.
6. The method of claim 5 , wherein the step of exposing the passivation layer by the first pad mask is performed to form holes encircling the exposed pad metal.
7. The method of claim 5 , wherein the step of exposing the passivation layer by the first pad mask is performed to form a string encircling the exposed pad metal.
8. The method of claim 5 , wherein an area of the pad metal exposed by the second pad mask is smaller than that exposed by the first pad mask.