RF circuit electrostatic discharge protection
View Patent ↗A padring formed on a semi conductive substrate die provides Electro Static Discharge (ESD) protection for a Radio Frequency (RF) circuit also formed on the semi conductive substrate die. The padring includes a voltage supply rail, a ground rail, a plurality of signal pad structures, and a plurality of voltage clamps. The plurality of signal pad structures are disposed between the voltage supply rail and the ground rail. Each signal pad structure includes a signal pad that couples to the RF circuit, a voltage supply path diode disposed between and coupled between the signal pad and the voltage supply rail, and a ground path diode disposed between and coupled between the signal pad and the voltage supply rail. The plurality of voltage clamps are disposed between and coupled between the voltage supply rail and the ground rail.
1. A padring formed on a semi conductive substrate die to provide Electro Static Discharge (ESD) protection for a Radio Frequency (RF) circuit also formed on the semi conductive substrate die, the padring comprising:
a voltage supply rail disposed on an outer perimeter of the semi conductive substrate die and bordering around the RF circuit;
a ground rail disposed on an inner perimeter of the semi conductive substrate die and also bordering around the RF circuit, the ground rail residing substantially parallel to the voltage supply rail;
a plurality of signal pad structures disposed between the voltage supply rail and the ground rail, each signal pad structure comprising:
a signal pad disposed between the voltage supply rail and the ground rail, in which the signal pad couples to the RF circuit;
a voltage supply path diode disposed between and coupled to the signal pad and the voltage supply rail; and
a ground path diode disposed between and coupled to the signal pad and the ground rail; and
a plurality of voltage clamps disposed between and coupled to the voltage supply rail and the ground rail and disposed adjacent to respective signal pad structure on the semi conductive substrate die, wherein the voltage clamps, voltage supply rail, ground rail and the signal pad structures are formed at a periphery of the semi conductive substrate die and on a border of the RF circuit.
2. The padring of claim 1 , wherein at least one of the ground path diode and the voltage supply path diode comprises an NDIO diode having an N+ contact formed in P type well.
3. The padring of claim 1 , wherein at least one of the ground path diode and the voltage supply path diode comprises an NDIO diode having an N+ contact formed in P type substrate.
4. The padring of claim 1 , wherein at least one of the ground path diode and the voltage supply path diode comprises an PDIO diode having an P+ contact formed in N type well.
5. The padring of claim 1 , wherein each voltage clamp comprises a plurality of transistors coupled between the voltage supply rail and the ground rail.
6. The padring of claim 5 , wherein the plurality of transistors comprise a plurality of NMOS transistors.
7. The padring of claim 1 , wherein the voltage supply path diode and the ground path diode are selected to meet a predetermined parasitic capacitance budget at the signal pad.
8. The padring of claim 7 , wherein the voltage supply path diode and the ground path diode are further selected to meet a maximum conductive resistance budget.