Method of production of multilayer ceramic electronic device
A method of production of a multilayer ceramic capacitor or other multilayer ceramic electronic device with few structural defects and improved highly accelerated life, that is, a method of production of a multilayer ceramic electronic device having a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers, a first annealing step of annealing, at a temperature T 1 of 600 to 900° C., the stack after firing and a second annealing step of annealing, at a temperature T 2 of 900 to 1200° C. (however, excluding 900° C.), the stack after said first annealing.
1. A method of production of a multilayer ceramic electronic device comprising
a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers,
a first annealing step of annealing, at a temperature T 1 , the stack after firing and
a second annealing step of annealing, at a temperature T 2 higher than the temperature T 1 , the stack after said first annealing.
2. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein the difference (T 2 −T 1 ) between T 2 and T 1 is at least 50° C.
3. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein an atmospheric temperature of a temperature reducing process of the firing step where the atmospheric temperature is lowered from the firing holding temperature is lowered to a temperature the same as the temperature T 1 , the first annealing step is performed, then the second annealing step is performed.
4. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein an atmospheric temperature of a temperature reducing process of the firing step where the atmospheric temperature is lowered from the firing holding temperature is lowered to a temperature lower than said temperature T 1 and higher than room temperature, then the atmospheric temperature is raised, the first annealing step is performed, then the second annealing step is performed.
5. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein after a temperature lowering step of the firing step where an atmospheric temperature is lowered from a firing holding temperature, the atmospheric temperature is raised, the first annealing step is performed, then the second annealing step is performed.
6. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein the first annealing step is performed at an oxygen partial pressure of 10 −7 to 0.1 Pa and the second annealing step is performed at an oxygen partial pressure of 10 −5 to 10 Pa.
7. The method of production of a multilayer ceramic electronic device as set forth in claim 1 , wherein a dielectric layer paste having a main ingredient material including a dielectric oxide of a composition of {(Sr 1-x Ca x ) O} m .(Ti 1-y Zr y )O 2 where 0≦x≦1.00, 0≦y≦1.00, and 0.75≦m≦1.3, and a secondary ingredient material including Mn is used.
8. A method of production of a multilayer ceramic electronic device comprising
a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers,
a first annealing step of annealing, at a temperature T 1 of 600 to 900° C., the stack after firing and
a second annealing step of annealing, at a temperature T 2 of 900 to 1200° C. (however, excluding 900° C.), the stack after said first annealing.
9. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein the difference (T 2 −T 1 ) between T 2 and T 1 is at least 50° C.
10. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein an atmospheric temperature of a temperature reducing process of the firing step where the atmospheric temperature is lowered from the firing holding temperature is lowered to a temperature the same as the temperature T 1 , the first annealing step is performed, then the second annealing step is performed.
11. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein an atmospheric temperature of a temperature reducing process of the firing step where the atmospheric temperature is lowered from the firing holding temperature is lowered to a temperature lower than said temperature T 1 and higher than room temperature, then the atmospheric temperature is raised, the first annealing step is performed, then the second annealing step is performed.
12. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein after a temperature lowering step of the firing step where an atmospheric temperature is lowered from a firing holding temperature, the atmospheric temperature is raised, the first annealing step is performed, then the second annealing step is performed.
13. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein the first annealing step is performed at an oxygen partial pressure of 10 −7 to 0.1 Pa and the second annealing step is performed at an oxygen partial pressure of 10 −5 to 10 Pa.
14. The method of production of a multilayer ceramic electronic device as set forth in claim 8 , wherein a dielectric layer paste having a main ingredient material including a dielectric oxide of a composition of {(Sr 1-x Ca x )O} m .(Ti 1-y Zr y )O 2 , where 0≦x≦1.00, 0≦y≦1.00, and 0.75≦m≦1.3, and a secondary ingredient material including Mn is used.