IP Library Granted Patent US 7,196,898
Granted Patent B2
US 7,196,898 · App. 10/974,789 · Granted Mar 27, 2007

Thin film capacitor, high-density packaging substrate incorporating thin film capacitor, and method for manufacturing thin-film capacitor

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Quick Facts
Patent No.
US 7,196,898
App. No.
10/974,789
Granted
Mar 27, 2007
Kind
B2
Abstract

A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.

Claims (26)

1. A thin-film capacitor which is capable of being incorporated into a high-density packaging substrate, the capacitor comprising:

at least a high-dielectric-constant capacitor,

wherein the high-dielectric-constant capacitor comprises an upper electrode layer, a lower electrode layer, and a high-dielectric-constant layer disposed therebetween,

wherein connectors of the upper and lower electrode layers of the high-dielectric constant capacitor extend to above the upper electrode layer, and

further comprising an insulating layer laminated on the upper side of the high-dielectric-constant capacitor; the insulating layer having a first contact hole above the upper electrode layer and a second contact hole above the lower electrode layer, the connectors of the upper and lower electrode layers extending therethrough, respectively, to above the upper electrode layer.

2. The thin-film capacitor according to claim 1 , wherein the high-dielectric-constant capacitor has a laminate (i) comprising the lower electrode layer, the high-dielectric-constant layer and the upper electrode layer which are sequentially laminated in this order, and the high-dielectric-constant capacitor further has one or more laminates (ii) comprising the high-dielectric-constant layer and an electrode layer, the laminate (ii) being laminated on the laminate (i).

3. The thin-film capacitor according to claim 1

wherein the film thickness of the high-dielectric-constant layer is less than or equal to 200 nm.

4. The thin-film capacitor according to claim 3 , wherein each of the upper electrode layer and the lower electrode layer comprises at least one selected from Pt, Ir, Ru, Re, and conductive metal oxides.

5. The thin-film capacitor according to claim 4 , wherein both of the upper electrode layer and the lower electrode layer consist of Pt.

6. The thin film capacitor according to claim 3 , wherein thickness of high-dielectric-constant layer is 200 nm to 50 nm.

7. The thin-film capacitor according to claim 1 , wherein the connectors of the upper electrode layer and the lower electrode layer consists of copper.

8. The thin-film capacitor according to claim 1 , further comprising an adhesion layer formed on the lower side of the lower electrode layer, wherein the adhesion layer consists of an oxide of tantalum or titanium.

9. The thin-film capacitor according to claim 1 , wherein the high-dielectric-constant layer comprises at least one material selected from ferroelectric materials and paraelectric materials.

10. The thin-film capacitor according to claim 1 , wherein the high-dielectric-constant layer comprises a BST-based material which contains Ba x Sr 1−x TiO 3 (0≦x≦1) as a primary component.

11. The thin-film capacitor according to claim 1 , wherein the the high-dielectric-constant layer comprises an STO-based material which contains SrTiO 3 as a primary component.

12. The thin-film capacitor according to claim 1 , wherein the film thickness of the thin-film capacitor is 200 (m or less.

13. The thin-film capacitor according to claim 1 further comprising a support substrate having a thickness of 150 (m or less.

14. A high-density packaging substrate comprising:

a laminated wiring layer each surrounded by an insulating layer, and

a thin film capacitor connected to a part of the wiring layer as a passive component; wherein

the thin-film capacitor comprises the thin-film capacitor according to claim 1 .

15. The thin-film capacitor which is capable of being incorporated into a high-density packaging substrate, the capacitor comprising:

at least a high-dielectric-constant capacitor, wherein the high-dielectric-constant layer comprises an SBT-based material containing, as a primary component, a composite metal oxide represented by the following formula (I):

Sr 1−x Bi 2+y (Ta 2−z , Nb z )O 9+α   (I)

wherein each of x, y, and α represents a number which is zero or more and less than one; and z represents a number which is zero or more and less than two.

Assignments (3)
CHANGE OF NAME Recorded Mar 21, 2014
From: OKI SEMICONDUCTOR CO., LTD
To: LAPIS SEMICONDUCTOR CO., LTD.
Reel/Frame 032495/0483 →
CHANGE OF NAME Recorded Dec 24, 2008
From: OKI ELECTRIC INDUSTRY CO., LTD.
To: OKI SEMICONDUCTOR CO., LTD.
Reel/Frame 022052/0797 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 25, 2005
From: OSAKA, TETSUYA; KOIWA, ICHIRO; HASHIMOTO, AKIRA; SATO, YOSHIMI
To: WASEDA UNIVERSITY; OKI ELECTRIC INDUSTRY CO., LTD.; TOKYO OHKA KOGYO CO., LTD.
Reel/Frame 016193/0969 →