Poly(arylene ether) polymer with low temperature or UV crosslinking grafts and dielectric comprising the same
View Patent ↗Poly(arylene ether) polymers are provided having polymer repeat units of the following structure: wherein Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 and G 8 is a hydroxyalkyl furan group. Thin films of the polymer and methods of making the polymer are also provided.
1. Poly(arylene ether) polymers comprising polymer repeat units of the following structure:
wherein Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 and G 8 is a hydroxyalkyl furan group.
2. The polymers of claim 1 , wherein at least one of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 , and G 8 is selected from the group consisting of:
3. The polymers of claim 1 wherein Ar 1 , Ar 2 , Ar 3 , and Ar 4 are independently selected from the group consisting of:
4. The polymers of claim 1 wherein at least one of the polymer repeat units is selected from the group consisting of:
5. The polymers of claim 1 wherein at least one of the polymer repeat units is:
6. The polymers of claim 1 , which are cured via UV radiation.
7. The polymers of claim 1 , which are cured via UV irradiation in the presence of a photoacid generator.
8. The polymers of claim 1 , in a dielectric layer.
9. The polymers of claim 1 in cured form, said cured form of the polymers having a Tg from 160 to 180° C., a dielectric constant below 2.7 with frequency independence, and a maximum moisture absorption of less than 0.17 wt %.
10. The polymers of claim 1 which are thermally cured.
11. The polymers of claim 1 , and diluent, which does not afford a functional group or interfere with the mechanical or electrical properties of the composition.
12. The polymer of claim 1 and a catalyst.
13. The polymer of claim 1 , wherein the average number of said G groups per polymer repeat unit is 0.01 to 8.
14. Thin films comprising the poly(arylene ether) polymers comprising polymer repeat units of the following structure:
wherein Ar 1 , Ar 2 , Ar 3 , and Ar 4 are identical or different aryl radicals, m is 0 to 1, n is 1-m, and at least one of G 1 , G 2 , G 3 , G 4 , G 5 , G 6 , G 7 and G 8 is a hydroxyalkylfuran group.
15. Thin films of the polymers of claim 14 , in dielectric layers.
16. Thin films of claim 14 having a Tg from 250–350° C., a dielectric constant below 3.5 with frequency independence, and a maximum moisture absorption of less than 1 wt %.
17. Thin films of claim 14 , which are cured via UV irradation in the presence of a photoacid generator.
18. Thin films of claim 14 which are cured thermally.
19. The thin films of claim 18 wherein the film has a Tg from 250° C. to 350° C., a dielectric constant below 3.5 with frequency independence, and a maximum moisture absorption of less than 1 wt %, wherein said thin film is formed by a method comprising applying the polymer of claim 1 to the substrate and heating the polymer to a curing temperature.
20. The thin films of claim 19 , wherein the curing temperature is at or below 300° C.
21. The thin films of claim 19 , wherein the heating of the polymer is conducted in the presence of a photoacid generator.
22. The thin films of claim 19 , wherein the polymer is applied to the substrate in a composition further comprising a diluent that does not afford a functional group or interfere with mechanical or electrical properties of the composition.
23. The thin films of claim 19 , wherein the film is an interlayer dielectric that insulates the substrate from a second substrate.
24. The thin films of claim 19 , wherein the heating of the polymer is initiated with UV radiation.